Abstract: A four quadrant power module with lower substrate parallel power paths and upper substrate equidistant clock tree timing utilizing parallel leg construction in a captive fastener power module housing.

Abstract: An improved microelectronic assembly (100) and packaging method includes a device package for housing a semiconductor die or chip, (105), an array of passive electronic components (305-355) operating in cooperation with the flip chip semiconductor die (105) and housed inside the device package to decouple noise from input signals, and a heat spreader (195) disposed between a top surface of the semiconductor die (105) and a package cover (185). The semiconductor die (105) is configured as a flip chip die and the device package includes a package substrate (110) configured as a ball grid array. The improved microelectronic device (100) reduces parasitic inductance in electrical interconnections between the semiconductor die and an electrical system substrate (115) and reduces signal noise in mixed signal high frequency analog to digital converters operating at clock rates above 1 GHz.

Abstract: An improved microelectronic assembly (100) and packaging method includes a device package for housing a semiconductor die or chip, (105), an array of passive electronic components (305-355) operating in cooperation with the flip chip semiconductor die (105) and housed inside the device package to decouple noise from input signals, and a heat spreader (195) disposed between a top surface of the semiconductor die (105) and a package cover (185). The semiconductor die (105) is configured as a flip chip die and the device package includes a package substrate (110) configured as a ball grid array. The improved microelectronic device (100) reduces parasitic inductance in electrical interconnections between the semiconductor die and an electrical system substrate (115) and reduces signal noise in mixed signal high frequency analog to digital converters operating at clock rates above 1 GHz.

Abstract: An improved microelectronic assembly (100) and packaging method includes a device package for housing a semiconductor die or chip, (105), an array of passive electronic components (305-355) operating in cooperation with the flip chip semiconductor die (105) and housed inside the device package to decouple noise from input signals, and a heat spreader (195) disposed between a top surface of the semiconductor die (105) and a package cover (185). The semiconductor die (105) is configured as a flip chip die and the device package includes a package substrate (110) configured as a ball grid array. The improved microelectronic device (100) reduces parasitic inductance in electrical interconnections between the semiconductor die and an electrical system substrate (115) and reduces signal noise in mixed signal high frequency analog to digital converters operating at clock rates above 1 GHz.

Abstract: An improved microelectronic assembly (100) and packaging method includes a device package for housing a semiconductor die or chip, (105), an array of passive electronic components (305-355) operating in cooperation with the flip chip semiconductor die (105) and housed inside the device package to decouple noise from input signals, and a heat spreader (195) disposed between a top surface of the semiconductor die (105) and a package cover (185). The semiconductor die (105) is configured as a flip chip die and the device package includes a package substrate (110) configured as a ball grid array. The improved microelectronic device (100) reduces parasitic inductance in electrical interconnections between the semiconductor die and an electrical system substrate (115) and reduces signal noise in mixed signal high frequency analog to digital converters operating at clock rates above 1 GHz.

Abstract: A structure and process for packaging RF MEMS and other devices employs a substrate of silicon, for example, and a cap of glass, for example, having cavities to receive the devices. MEMS or other devices are supported on an upper surface of the substrate, into which metal-filled blind vias are formed. The cap is attached to the substrate, so as to enclose designated MEMS or other devices in the cavities. The substrate is then thinned so as to expose the metal of the vias at a lower surface of the substrate. Electrical connecting elements such as solder balls are then applied to the metal of the vias. The resultant composite substrate is then divided to provide individual packaged devices.

Abstract: A structure and process for packaging RF MEMS and other devices employs a substrate of silicon, for example, and a cap of glass, or example, having cavities to receive the devices. MEMS or other devices are supported on an upper surface of the substrate, into which metal-filled blind vias are formed. The cap is attached to the substrate, so as to enclose designated MEMS or other devices in the cavities. The substrate is then thinned so as to expose the metal of the vias at a lower surface of the substrate. Electrical connecting elements such as solder balls are then applied to the metal of the vias. The resultant composite substrate is then divided to provide individual packaged devices.