Abstract: Forming a protective coating ex situ in an atomic layer deposition process to coat one or more chamber components subsequently installed in a reaction chamber provides a number of benefits over more conventional coating methods such as in situ deposition of an undercoat. In certain cases the protective coating may have a particular composition such as aluminum oxide, aluminum fluoride, aluminum nitride, yttrium oxide, and/or yttrium fluoride. The protective coating may help reduce contamination on wafers processed using the coated chamber component. Further, the protective coating may act to stabilize the processing conditions within the reaction chamber, thereby achieving very stable/uniform processing results over the course of processing many batches of wafers, and minimizing radical loss. Also described are a number of techniques that may be used to restore the protective coating after the coated chamber component is used to process semiconductor wafers.

Abstract: Improved edge rings with flow conductance features are disclosed. The flow conductance features of the edge ring are features added to the edge ring that adjust the flow conductance of gas flowing in the local area of the edge ring. The flow conductance features can adjust the flow conductance to compensate for features on a semiconductor wafer, the edge ring, and in the chamber that may affect the flow of gas in the local areas. The flow conductance may be increased, reduced, or tuned depending on the desired effect.

Abstract: Forming a protective coating ex situ in an atomic layer deposition process to coat one or more chamber components subsequently installed in a reaction chamber provides a number of benefits over more conventional coating methods such as in situ deposition of an undercoat. In certain cases the protective coating may have a particular composition such as aluminum oxide, aluminum fluoride, aluminum nitride, yttrium oxide, and/or yttrium fluoride. The protective coating may help reduce contamination on wafers processed using the coated chamber component. Further, the protective coating may act to stabilize the processing conditions within the reaction chamber, thereby achieving very stable/uniform processing results over the course of processing many batches of wafers, and minimizing radical loss. Also described are a number of techniques that may be used to restore the protective coating after the coated chamber component is used to process semiconductor wafers.

Abstract: Providing herein are methods of delivery of gas reactants to a processing chamber and related apparatus.

Abstract: Provided herein are methods of filling features with metal including inhibition of metal nucleation. Also provided are methods of enhancing inhibition and methods of reducing or eliminating inhibition of metal nucleation.

Abstract: Forming a protective coating ex situ in an atomic layer deposition process to coat one or more chamber components subsequently installed in a reaction chamber provides a number of benefits over more conventional coating methods such as in situ deposition of an undercoat. In certain cases the protective coating may have a particular composition such as aluminum oxide, aluminum fluoride, aluminum nitride, yttrium oxide, and/or yttrium fluoride. The protective coating may help reduce contamination on wafers processed using the coated chamber component. Further, the protective coating may act to stabilize the processing conditions within the reaction chamber, thereby achieving very stable/uniform processing results over the course of processing many batches of wafers, and minimizing radical loss. Also described are a number of techniques that may be used to restore the protective coating after the coated chamber component is used to process semiconductor wafers.

Abstract: Provided herein are methods and apparatuses for controlling uniformity of processing at an edge region of a semiconductor wafer. In some embodiments, the methods include providing a backside inhibition gas as part of a deposition-inhibition-deposition (DID) sequence.

Abstract: Forming a protective coating ex situ in an atomic layer deposition process to coat one or more chamber components subsequently installed in a reaction chamber provides a number of benefits over more conventional coating methods such as in situ deposition of an undercoat. In certain cases the protective coating may have a particular composition such as aluminum oxide, aluminum fluoride, aluminum nitride, yttrium oxide, and/or yttrium fluoride. The protective coating may help reduce contamination on wafers processed using the coated chamber component. Further, the protective coating may act to stabilize the processing conditions within the reaction chamber, thereby achieving very stable/uniform processing results over the course of processing many batches of wafers, and minimizing radical loss. Also described are a number of techniques that may be used to restore the protective coating after the coated chamber component is used to process semiconductor wafers.

Abstract: Forming a protective coating ex situ in an atomic layer deposition process to coat one or more chamber components subsequently installed in a reaction chamber provides a number of benefits over more conventional coating methods such as in situ deposition of an undercoat. In certain cases the protective coating may have a particular composition such as aluminum oxide, aluminum fluoride, aluminum nitride, yttrium oxide, and/or yttrium fluoride. The protective coating may help reduce contamination on wafers processed using the coated chamber component. Further, the protective coating may act to stabilize the processing conditions within the reaction chamber, thereby achieving very stable/uniform processing results over the course of processing many batches of wafers, and minimizing radical loss. Also described are a number of techniques that may be used to restore the protective coating after the coated chamber component is used to process semiconductor wafers.

Abstract: Provided herein are methods and apparatuses for controlling uniformity of processing at an edge region of a semiconductor wafer. In some embodiments, the methods include exposing an edge region to treatment gases such as etch gases and/or inhibition gases. Also provided herein are exclusion ring assemblies including multiple rings that may be implemented to provide control of the processing environment at the edge of the wafer.

Abstract: Forming a protective coating ex situ in an atomic layer deposition process to coat one or more chamber components subsequently installed in a reaction chamber provides a number of benefits over more conventional coating methods such as in situ deposition of an undercoat. In certain cases the protective coating may have a particular composition such as aluminum oxide, aluminum fluoride, aluminum nitride, yttrium oxide, and/or yttrium fluoride. The protective coating may help reduce contamination on wafers processed using the coated chamber component. Further, the protective coating may act to stabilize the processing conditions within the reaction chamber, thereby achieving very stable/uniform processing results over the course of processing many batches of wafers, and minimizing radical loss. Also described are a number of techniques that may be used to restore the protective coating after the coated chamber component is used to process semiconductor wafers.

Abstract: Forming a protective coating ex situ in an atomic layer deposition process to coat one or more chamber components subsequently installed in a reaction chamber provides a number of benefits over more conventional coating methods such as in situ deposition of an undercoat. In certain cases the protective coating may have a particular composition such as aluminum oxide, aluminum fluoride, aluminum nitride, yttrium oxide, and/or yttrium fluoride. The protective coating may help reduce contamination on wafers processed using the coated chamber component. Further, the protective coating may act to stabilize the processing conditions within the reaction chamber, thereby achieving very stable/uniform processing results over the course of processing many batches of wafers, and minimizing radical loss. Also described are a number of techniques that may be used to restore the protective coating after the coated chamber component is used to process semiconductor wafers.

Abstract: Forming a protective coating ex situ in an atomic layer deposition process to coat one or more chamber components subsequently installed in a reaction chamber provides a number of benefits over more conventional coating methods such as in situ deposition of an undercoat. In certain cases the protective coating may have a particular composition such as aluminum oxide, aluminum fluoride, aluminum nitride, yttrium oxide, and/or yttrium fluoride. The protective coating may help reduce contamination on wafers processed using the coated chamber component. Further, the protective coating may act to stabilize the processing conditions within the reaction chamber, thereby achieving very stable/uniform processing results over the course of processing many batches of wafers, and minimizing radical loss. Also described are a number of techniques that may be used to restore the protective coating after the coated chamber component is used to process semiconductor wafers.

Abstract: A liquid immersion lithography apparatus includes a projection system having a final optical element, a stage movable in a scanning direction beneath the projection system and arranged to support a substrate, and a nozzle member disposed to surround at least a lower part of the final optical element. The nozzle member has a first aperture disposed on one side of the final optical element and a second aperture disposed on an other side of the final optical element. During exposure, immersion liquid is supplied and recovered by the nozzle member using the first and second apertures to provide a flow of the immersion liquid across an end surface of the final optical element. The flow of the immersion liquid across the end surface of the final optical element is across the scanning direction.

Abstract: A liquid immersion lithography apparatus includes a projection system having a final optical element and a nozzle member having a first opening disposed on a first side of the final optical element and from which an immersion liquid is supplied, a second opening disposed on a second side of the final optical element and from which the immersion liquid is recovered, and a liquid recovery portion disposed to surround a path of an exposure beam and from which the immersion liquid is recovered. A tank is fluidicly connected to the liquid recovery portion of the nozzle member. During exposure of a substrate to the exposure beam, an upper surface of the substrate faces the liquid recovery portion, and the immersion liquid is supplied from the first opening while performing liquid recovery from the second opening and the liquid recovery portion.

Abstract: A liquid immersion lithography apparatus includes a projection system having a final optical element and a nozzle member having a first opening disposed on a first side of the final optical element and from which an immersion liquid is supplied, a second opening disposed on a second side of the final optical element and from which the immersion liquid is recovered, and a liquid recovery portion disposed to surround a path of an exposure beam and from which the immersion liquid is recovered. A tank is fluidicly connected to the liquid recovery portion of the nozzle member. During exposure of a substrate to the exposure beam, an upper surface of the substrate faces the liquid recovery portion, and the immersion liquid is supplied from the first opening while performing liquid recovery from the second opening and the liquid recovery portion.

Abstract: A liquid immersion lithography apparatus includes a projection system having a final optical element and a nozzle member having a first opening disposed on a first side of the final optical element and from which an immersion liquid is supplied, a second opening disposed on a second side of the final optical element and from which the immersion liquid is recovered, and a liquid recovery portion disposed to surround a path of an exposure beam and from which the immersion liquid is recovered. A tank is fluidicly connected to the liquid recovery portion of the nozzle member. During exposure of a substrate to the exposure beam, an upper surface of the substrate faces the liquid recovery portion, and the immersion liquid is supplied from the first opening while performing liquid recovery from the second opening and the liquid recovery portion.

Abstract: A liquid immersion lithography apparatus includes a projection system having a final optical element and a nozzle member having a first opening disposed on a first side of the final optical element and from which an immersion liquid is supplied a second opening disposed on a second side of the final optical element and from which the immersion liquid is recovered, and a liquid recovery portion disposed to surround a path of an exposure beam and from which the immersion liquid is recovered. A tank is fluidicly connected to the liquid recovery portion of the nozzle member. During exposure of a substrate to the exposure beam, an upper surface of the substrate faces the liquid recovery portion, and the immersion liquid is supplied from the first opening while performing liquid recovery from the second opening and the liquid recovery portion.

Abstract: An immersion lithography system and method exposes a substrate through a liquid. The substrate is exposed through the liquid, which is provided between a final optical element of a projection lens and the substrate. The liquid is recovered from an upper surface of the substrate via a recovery opening of an immersion apparatus under which the substrate is positioned, the immersion apparatus being disposed around the final optical element of the projection lens. The a pressure for recovering the liquid from the upper surface of the substrate via the recovery opening is controlled by a pressure control system, the pressure control system having a first tank connected to the recovery opening via a recovery flow line and a vacuum regulator to control a pressure in the first tank.

Abstract: An immersion liquid confinement apparatus confines an immersion liquid in an immersion area that includes a gap between a projection system and an object of exposure in an immersion lithography system. The apparatus also recovers the immersion liquid from the immersion area. The apparatus includes an aperture through which a patterned image is projected, an outlet, a first chamber into which the immersion liquid is recovered through the outlet, and a second chamber into which the immersion liquid is recovered through a porous member from the first chamber. The porous member has a first surface contacting the first chamber and a second surface contacting the second chamber. A vertical position of a first portion of the first surface is different from a vertical position of a second portion of the first surface.