Abstract: A piezoelectric micromachined ultrasound transducer (PMUT) device may include a plurality of layers including a structural layer, a piezoelectric layer, and electrode layers located on opposite sides of the piezoelectric layer. Conductive barrier layers may be located between the piezoelectric layer and the electrodes to the prevent diffusion of the piezoelectric layer into the electrode layers.

Abstract: An ultrasonic transducer device including a substrate, an edge support structure connected to the substrate, and a membrane connected to the edge support structure such that a cavity is defined between the membrane and the substrate, the membrane configured to allow movement at ultrasonic frequencies. The membrane includes a structural layer, a piezoelectric layer having a first surface and a second surface, a first electrode placed on the first surface of the piezoelectric layer, wherein the first electrode is located at the center of the membrane, a second electrode placed on the first surface of the piezoelectric layer, wherein the second electrode is a patterned electrode comprising more than one electrode components that are electrically coupled, and a third electrode coupled to the second surface of the piezoelectric layer and electrically coupled to ground.

Abstract: An ultrasonic transducer array including a substrate, a membrane overlying the substrate, the membrane configured to allow movement at ultrasonic frequencies, and a plurality of anchors connected to the substrate and connected to the membrane. The membrane includes a piezoelectric layer, a plurality of first electrodes, and a plurality of second electrodes, wherein each ultrasonic transducer of a plurality of ultrasonic transducers includes at least a first electrode and at least a second electrode. The plurality of anchors includes a first anchor including a first electrical connection for electrically coupling at least one first electrode to control circuitry and a second anchor including a second electrical connection for electrically coupling at least one second electrode. The ultrasonic transducer array could be either a two-dimensional array or a one-dimensional array of ultrasonic transducers.

Abstract: The present disclosure relates to measuring misalignment between layers of a semiconductor device. In one embodiment, a device includes a first conductive layer; a second conductive layer; one or more first electrodes embedded in the first conductive layer; one or more second electrodes embedded in the second conductive layer; a sensing circuit connected to the one or more first electrodes; and a plurality of time-varying signal sources connected to the one or more second electrodes, wherein the one or more first electrodes and the one or more second electrodes form at least a portion of a bridge structure that exhibits an electrical property that varies as a function of misalignment of the first conductive layer and the second conductive layer in an in-plane direction.

Abstract: A deep finger ultrasonic sensor device includes an array of ultrasonic transducers and an array controller configured to control activation of ultrasonic transducers of the array of ultrasonic transducers during an imaging operation for capturing a depth image of a finger, where the depth image includes a plurality of features inside the finger. The array controller is configured to control transmission of ultrasonic signals and receipt of reflected ultrasonic signals during the imaging operation, where the reflected ultrasonic signals are utilized in generating the depth image of the finger.

Abstract: A MEMS sensor includes a proof mass that is suspended over a substrate. A sense electrode is located on a top surface of the substrate parallel to the proof mass, and forms a capacitor with the proof mass. The sense electrodes have a plurality of slots that provide improved performance for the MEMS sensor. A measured value sensed by the MEMS sensor is determined based on the movement of the proof mass relative to the slotted sense electrode.

Abstract: A MEMS sensor includes a proof mass that is suspended over a substrate. A sense electrode is located on a top surface of the substrate parallel to the proof mass, and forms a capacitor with the proof mass. The sense electrodes have a plurality of slots that provide improved performance for the MEMS sensor. A measured value sensed by the MEMS sensor is determined based on the movement of the proof mass relative to the slotted sense electrode.

Abstract: The present disclosure relates to measuring misalignment between layers of a semiconductor device. In one embodiment, a device includes a first conductive layer; a second conductive layer; one or more first electrodes embedded in the first conductive layer; one or more second electrodes embedded in the second conductive layer; a sensing circuit connected to the one or more first electrodes; and a plurality of time-varying signal sources connected to the one or more second electrodes, wherein the one or more first electrodes and the one or more second electrodes form at least a portion of a bridge structure that exhibits an electrical property that varies as a function of misalignment of the first conductive layer and the second conductive layer in an in-plane direction.

Abstract: The present disclosure relates to measuring misalignment between layers of a semiconductor device. In one embodiment, a device includes a first conductive layer; a second conductive layer; one or more first electrodes embedded in the first conductive layer; one or more second electrodes embedded in the second conductive layer; a sensing circuit connected to the one or more first electrodes; and a plurality of time-varying signal sources connected to the one or more second electrodes, wherein the one or more first electrodes and the one or more second electrodes form at least a portion of a bridge structure that exhibits an electrical property that varies as a function of misalignment of the first conductive layer and the second conductive layer in an in-plane direction.

Abstract: An ultrasonic transducer device including a substrate, an edge support structure connected to the substrate, and a membrane connected to the edge support structure such that a cavity is defined between the membrane and the substrate, the membrane configured to allow movement at ultrasonic frequencies. The membrane includes a first piezoelectric layer having a first surface and a second surface, a second piezoelectric layer having a first surface and a second surface, wherein the second surface of the first piezoelectric layer faces the first surface of the second piezoelectric layer, a first electrode coupled to the first surface of the first piezoelectric layer, a second electrode coupled to the second surface of the second piezoelectric layer, and a third electrode between the first piezoelectric layer and the second piezoelectric layer.

Abstract: A microelectromechanical (MEMS) accelerometer senses linear acceleration perpendicular to a MEMS device plane of the MEMS accelerometer based on a rotation of a proof mass out-of-plane about a rotational axis. A symmetry axis is perpendicular to the rotational axis. The proof mass includes a symmetric portion that is symmetric about the symmetry axis and that is contiguous with an asymmetric portion that is asymmetric about the symmetry axis.

Abstract: The present disclosure relates to measuring misalignment between layers of a semiconductor device. In one embodiment, a device includes a first conductive layer; a second conductive layer; one or more first electrodes embedded in the first conductive layer; one or more second electrodes embedded in the second conductive layer; a sensing circuit connected to the one or more first electrodes; and a plurality of time-varying signal sources connected to the one or more second electrodes, wherein the one or more first electrodes and the one or more second electrodes form at least a portion of a bridge structure that exhibits an electrical property that varies as a function of misalignment of the first conductive layer and the second conductive layer in an in-plane direction.

Abstract: A fingerprint sensor is provided herein. A method for operating the fingerprint sensor can comprise selecting a pair of electrode elements from a first set of electrode elements and a second set of electrode elements of a second electrode. The first electrode is located on a first side of a piezoelectric layer; the second electrode is located on a second side of the piezoelectric layer. The first side and the second side are opposite sides of the piezoelectric layer. The method also can comprise transmitting ultrasonic signals using the pair of electrode elements based on a position of a switch element being in a first position, and receiving ultrasonic signals using the pair of electrode elements based on the position of the switch element being in a second position.

Abstract: The present invention relates to systems and methods for measuring misalignment between layers of a semiconductor device. In one embodiment, a method includes applying an input voltage to respective ones of one or more first electrodes associated with a first conductive layer of a semiconductor device; sensing an electrical property of one or more second electrodes associated with a second conductive layer of the semiconductor device in response to applying the input voltage to the respective ones of the one or more first electrodes; and calculating a misalignment between the first conductive layer of the semiconductor device and the second conductive layer of the semiconductor device in an in-plane direction as a function of the electrical property of the one or more second electrodes.

Abstract: A MEMS sensor includes a MEMS layer, a cap layer, and a substrate layer. The MEMS layer includes a suspended spring-mass system that moves in response to a sensed inertial force. The suspended spring-mass system is suspended from one or more anchors. The anchors are coupled to each of the cap layer and the substrate layer by anchoring components. The anchoring components are offset such that a force applied to the cap layer or the substrate layer causes a rotation of the anchor and such that the suspended spring-mass system substantially remains within the original MEMS layer.

Abstract: A piezoelectric micromachined ultrasound transducer (PMUT) device may include a plurality of layers including a structural layer, a piezoelectric layer, and electrode layers located on opposite sides of the piezoelectric layer. Conductive barrier layers may be located between the piezoelectric layer and the electrodes to the prevent diffusion of the piezoelectric layer into the electrode layers.

Abstract: A sensor is disclosed. The sensor includes a substrate and a mechanical structure. The mechanical structure includes at least two proof masses including a first proof mass and a second proof mass. The mechanical structure also includes a flexible coupling between the at least two proof masses and the substrate. The at least two proof masses move in an anti-phase direction normal to the plane of the substrate in response to acceleration of the sensor normal to the plane and move in anti-phase in a direction parallel to the plane of the substrate in response to an acceleration of the sensor parallel to the plane. The at least two proof masses move in a direction parallel to the plane of the substrate in response to an acceleration of the sensor parallel to the plane.

Abstract: A MEMS sensor includes a MEMS layer, a cap layer, and a substrate layer. The MEMS layer includes a suspended spring-mass system that moves in response to a sensed inertial force. The suspended spring-mass system is suspended from one or more anchors. The anchors are coupled to each of the cap layer and the substrate layer by anchoring components. The anchoring components are offset such that a force applied to the cap layer or the substrate layer causes a rotation of the anchor and such that the suspended spring-mass system substantially remains within the original MEMS layer.

Abstract: A microelectromechanical (MEMS) accelerometer senses linear acceleration perpendicular to a MEMS device plane of the MEMS accelerometer based on a rotation of a proof mass out-of-plane about a rotational axis. A symmetry axis is perpendicular to the rotational axis. The proof mass includes a symmetric portion that is symmetric about the symmetry axis and that is contiguous with an asymmetric portion that is asymmetric about the symmetry axis.

Abstract: The present invention relates to systems and methods for measuring misalignment between layers of a semiconductor device. In one embodiment, a method includes applying an input voltage to respective ones of one or more first electrodes associated with a first conductive layer of a semiconductor device; sensing an electrical property of one or more second electrodes associated with a second conductive layer of the semiconductor device in response to applying the input voltage to the respective ones of the one or more first electrodes; and calculating a misalignment between the first conductive layer of the semiconductor device and the second conductive layer of the semiconductor device in an in-plane direction as a function of the electrical property of the one or more second electrodes.