Patents by Inventor Leonardo DI BICCARI

Leonardo DI BICCARI has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • LDMOS device with integrated P-N junction diodes
    Patent number: 11282954
    Abstract: A structural body made of semiconductor material includes an active area housing a drain region, a body region and a source region within the body region. An electrical-isolation trench extends in the structural body to surround the active area. A first PN-junction and a second PN-junction are integrated in the structural body between the active area and the trench, respectively located on opposite sides of the active area. The first and the second PN-junctions form a first diode and a second diode, with each diode having a respective cathode electrically coupled to the drain region of the MOSFET device and a respective anode electrically coupled to the source region of the MOSFET device.
    Type: Grant
    Filed: October 25, 2019
    Date of Patent: March 22, 2022
    Assignee: STMicroelectronics S.r.l.
    Inventors: Marco Sambi, Michele Basso, Stefano Corona, Leonardo Di Biccari
  • ROBUST MOSFET DEVICE AND METHOD OF MANUFACTURING
    Publication number: 20200135919
    Abstract: A structural body made of semiconductor material includes an active area housing a drain region, a body region and a source region within the body region. An electrical-isolation trench extends in the structural body to surround the active area. A first PN-junction and a second PN-junction are integrated in the structural body between the active area and the trench, respectively located on opposite sides of the active area. The first and the second PN-junctions form a first diode and a second diode, with each diode having a respective cathode electrically coupled to the drain region of the MOSFET device and a respective anode electrically coupled to the source region of the MOSFET device.
    Type: Application
    Filed: October 25, 2019
    Publication date: April 30, 2020
    Applicant: STMicroelectronics S.r.l.
    Inventors: Marco SAMBI, Michele BASSO, Stefano CORONA, Leonardo DI BICCARI