Abstract: A cascade source provided with a cathode housing, a number of cascade plates insulated from each other and stacked on top of each other which together bound at least one plasma channel, and an anode plate provided with an outflow opening connecting to the plasma channel, wherein one cathode is provided per plasma channel, which cathode comprises an electrode which is adjustable relative to the cathode housing in the direction of the plasma channel, wherein the clamping provision is preferably of the collet chuck type. Also described is method for controlling the cascade source in use.

Abstract: A cascade source includes a cathode housing, a number of cascade plates insulated from each other and stacked on top of each other which together bound at least one plasma channel, and an anode plate provided with an outflow opening connecting to the plasma channel. One cathode is provided per plasma channel, which cathode includes an electrode which is adjustable relative to the cathode housing in the direction of the plasma channel. The clamp may be of the collet chuck type. At least a part of the housing of the source may be substantially transparent. A method for controlling the cascade source in use includes monitoring the electromagnetic radiation of the plasma through the substantially transparent housing part, and, dependent on the monitored radiation, controlling the plasma forming process in the source by variation of the gas supply, or variation of the potential difference between the cathode and the anode or a combination thereof.

Abstract: An assembly for processing substrates, which processing comprises a vacuum deposition process, such as, for instance, sputtering, CVD or PECVD, which vacuum deposition process is carried out in at least one process chamber, the assembly being provided with a conveying device for moving the substrates from a vacuum lock to a process chamber, the conveying device, which extends in a vacuum space, permitting a continuous conveyance of a substrate adjacent the at least one process chamber and permitting an intermittent conveyance adjacent at least the at least one vacuum lock.

Abstract: An assembly for processing substrates, which processing comprises a vacuum deposition process, such as, for instance, sputtering, CVD or PECVD, which vacuum deposition process is carried out in at least one process chamber, the assembly being provided with a conveying device for moving the substrates from a vacuum lock to a process chamber, the conveying device, which extends in a vacuum space, permitting a continuous conveyance of a substrate adjacent the at least one process chamber and permitting an intermittent conveyance adjacent at least the at least one vacuum lock.