Abstract: Systems and/or methods are presented that can facilitate regulating performance of operations in a memory device based on controlling an operating temperature slope associated with the memory device. A regulator component can facilitate controlling the operating temperature slope level and controlling a reference voltage(s) associated with a word-line(s) and/or bit-line(s) to facilitate execution of operations in a memory, while also controlling a respective current level(s) associated with the reference voltage to minimize errors in the memory or harm to the memory. The reference voltage can be controlled based on a first resistance and the current level can be controlled based on a second resistance that can be based on the first resistance. An analyzer component can facilitate determining a desired operating temperature slope level. Trim bits can be employed to facilitate setting the first resistance and/or the second resistance.

Abstract: Systems and/or methods are presented that can facilitate regulating performance of operations in a memory device based on controlling an operating temperature slope associated with the memory device. A regulator component can facilitate controlling the operating temperature slope level and controlling a reference voltage(s) associated with a word-line(s) and/or bit-line(s) to facilitate execution of operations in a memory, while also controlling a respective current level(s) associated with the reference voltage to minimize errors in the memory or harm to the memory. The reference voltage can be controlled based on a first resistance and the current level can be controlled based on a second resistance that can be based on the first resistance. An analyzer component can facilitate determining a desired operating temperature slope level. Trim bits can be employed to facilitate setting the first resistance and/or the second resistance.