Patents by Inventor Leonid Anatolievich Filatov

Leonid Anatolievich Filatov has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Silicon photoelectric multiplier (variants) and a cell for silicon photoelectric multiplier
    Patent number: 7759623
    Abstract: The invention relates to high-efficient light-recording detectors and can be used for nuclear and laser engineering, and in technical and medical tomography etc. The inventive silicon photoelectric multiplier (variant 1) comprising a p++ type conductivity substrate whose dope additive concentration ranges from 1018 to 1020 cm ?3 and which consists of cells, each of which comprises a p? type conductivity epitaxial layer whose dope additive concentration is gradually changeable from 1018 to 1014 cm?3 and which is grown on the substrate, a p? type conductivity layer whose dope additive concentration ranges from 1015 to 1017 cm?3 and a n+ type conductivity layer whose dope additive concentration ranges from 1018 to 1020 cm?3, wherein a polysilicon resistor connecting the n+ type conductivity layer with a feed bar is arranged in each cell on a silicon oxide layer and separating elements are disposed between the cells.
    Type: Grant
    Filed: May 5, 2005
    Date of Patent: July 20, 2010
    Assignees: Max-Planck-Gesellschaft zur Foerderung der Wissenschaften E.V.
    Inventors: Masahiro Teshima, Razmik Mirzoyan, Boris Anatolievich Dolgoshein, Sergey Nikolaevich Klemin, Elena Viktorovna Popova, Leonid Anatolievich Filatov
  • Silicon Photoelectric Multiplier (Variants) and a Cell for Silicon Photoelectric Multiplier
    Publication number: 20080251692
    Abstract: The invention relates to high-efficient light-recording detectors and can be used for nuclear and laser engineering, and in technical and medical tomography etc. The inventive silicon photoelectric multiplier (variant 1) comprising a p++ type conductivity substrate whose dope additive concentration ranges from 1018 to 1020 cm?3 and which consists of cells, each of which comprises a p-type conductivity epitaxial layer whose dope additive concentration is gradually changeable from 1018 to 1014 cm?3 and which is grown on the substrate, a p-type conductivity layer whose dope additive concentration ranges from 1015 to 1017 cm?3 and a n+ type conductivity layer whose dope additive concentration ranges from 1018 to 1020 cm?3, wherein a polysilicon resistor connecting the n+ type conductivity layer with a feed bar is arranged in each cell on a silicon oxide layer and separating elements are disposed between the cells.
    Type: Application
    Filed: May 5, 2005
    Publication date: October 16, 2008
    Applicant: MAX--PLANCK--GESELLSCHAFT FORDERUNG DER WISSENSCHAFTEN E.V. HOFGATEN STRASSE 8
    Inventors: Masahiro Teshima, Razmik Mirzoyan, Boris Anatolievich Dolgoshein, Sergey Nikolaevich Klemin, Elena Viktorovna Popova, Leonid Anatolievich Filatov