Patents by Inventor Leonid Dorf

Leonid Dorf has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • ELECTRON BEAM PLASMA SOURCE WITH SEGMENTED BEAM DUMP FOR UNIFORM PLASMA GENERATION
    Publication number: 20130098882
    Abstract: A plasma reactor that generates plasma in a workpiece processing chamber by an electron beam, has an electron beam source and segmented beam dump that is profiled to promote uniformity in the electron beam-produced plasma.
    Type: Application
    Filed: August 27, 2012
    Publication date: April 25, 2013
    Applicant: Applied Materials, Inc.
    Inventors: Leonid Dorf, Shahid Rauf, Kenneth S. Collins, Nipun Misra, James D. Carducci, Gary Leray, Kartik Ramaswamy
  • ELECTRON BEAM PLASMA SOURCE WITH PROFILED CHAMBER WALL FOR UNIFORM PLASMA GENERATION
    Publication number: 20130098553
    Abstract: A plasma reactor that generates plasma in a workplace processing chamber by an electron beam, has an electron beam source chamber with a wall opposite to the electron beam propagation direction, the wall being profiled to compensate for a non-uniformity in electron beam density distribution.
    Type: Application
    Filed: August 27, 2012
    Publication date: April 25, 2013
    Applicant: Applied Materials, Inc.
    Inventors: Kallol Bera, Kenneth S. Collins, Shahid Rauf, Leonid Dorf
  • Efficient and accurate method for real-time prediction of the self-bias voltage of a wafer and feedback control of ESC voltage in plasma processing chamber
    Patent number: 8313664
    Abstract: In a plasma reactor having an electrostatic chuck, wafer voltage may be determined from RF measurements at the bias input using previously determined constants based upon transmission line properties of the bias input, and this wafer voltage may be used to accurately control the DC wafer clamping voltage.
    Type: Grant
    Filed: November 20, 2009
    Date of Patent: November 20, 2012
    Assignee: Applied Materials, Inc.
    Inventors: Zhigang Chen, Shahid Rauf, Walter R. Merry, Leonid Dorf, Kartik Ramaswamy, Kenneth S. Collins
  • SYMMETRIC VHF SOURCE FOR A PLASMA REACTOR
    Publication number: 20120043023
    Abstract: The disclosure pertains to a capactively coupled plasma source in which VHF power is applied through an impedance-matching coaxial resonator having a folded structure and symmetrical power distribution.
    Type: Application
    Filed: March 14, 2011
    Publication date: February 23, 2012
    Applicant: Applied Materials, Inc.
    Inventors: Kartik Ramaswamy, Igor Markovsky, Zhigang Chen, James D. Carducci, Kenneth S. Collins, Shahid Rauf, Nipun Misra, Leonid Dorf, Zheng John Ye
  • MULTI-DIAGNOSTIC APPARATUS FOR SUBSTRATE-LEVEL MEASUREMENTS
    Publication number: 20100327873
    Abstract: Described herein is a method and apparatus for diagnosing processing equipment with a multi-diagnostic device. In one embodiment, a multi-diagnostic device is located in a plasma processing environment and includes an electronic circuitry. The device includes a first array of sensors and a second array of sensors. The circuitry is used to simultaneously (or nearly simultaneously) measure the distributions of ion saturation current and the potential at the device using the first array of sensors and to measure resistances of the second array of sensors to determine the distribution of the temperature at the surface of the device.
    Type: Application
    Filed: May 28, 2010
    Publication date: December 30, 2010
    Inventors: Leonid A. Dorf, Shahid Rauf, Kartik Ramaswamy, Ken Collins
  • EFFICIENT AND ACCURATE METHOD FOR REAL-TIME PREDICTION OF THE SELF-BIAS VOLTAGE OF A WAFER AND FEEDBACK CONTROL OF ESC VOLTAGE IN PLASMA PROCESSING CHAMBER
    Publication number: 20100136793
    Abstract: In a plasma reactor having an electrostatic chuck, wafer voltage may be determined from RF measurements at the bias input using previously determined constants based upon transmission line properties of the bias input, and this wafer voltage may be used to accurately control the DC wafer clamping voltage.
    Type: Application
    Filed: November 20, 2009
    Publication date: June 3, 2010
    Applicant: APPLIED MATERIALS, INC.
    Inventors: Zhigang Chen, Shahid Rauf, Walter R. Merry, Leonid Dorf, Kartik Ramaswamy, Kenneth S. Collins