Patents by Inventor Leonid Gorbunov

Leonid Gorbunov has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Silicon single crystal, and process for producing it
    Patent number: 7335256
    Abstract: A silicon single crystal which, over an ingot length of over 10 percent of the total ingot length, has a uniform defect picture and narrow radial dopant and oxygen variations. The process in accordance with the Czochralski method involves bringing about a temperature distribution in the melt in the region of the solidification interface which deviates from rotational symmetry.
    Type: Grant
    Filed: July 17, 2006
    Date of Patent: February 26, 2008
    Assignee: Siltronic AG
    Inventors: Martin Weber, Wilfried von Ammon, Herbert Schmidt, Janis Virbulis, Yuri Gelfgat, Leonid Gorbunov
  • Silicon single crystal, and process for producing it
    Publication number: 20060254498
    Abstract: A silicon single crystal which, over an ingot length of over 10 percent of the total ingot length, has a uniform defect picture and narrow radial dopant and oxygen variations. The process in accordance with the Czochralski method involves bringing about a temperature distribution in the melt in the region of the solidification interface which deviates from rotational symmetry.
    Type: Application
    Filed: July 17, 2006
    Publication date: November 16, 2006
    Applicant: Siltronic AG
    Inventors: Martin Weber, Wilfried von Ammon, Herbert Schmidt, Janis Virbulis, Yuri Gelfgat, Leonid Gorbunov
  • Silicon single crystal, and process for producing it
    Publication number: 20040118334
    Abstract: A silicon single crystal which, over an ingot length of over 10 percent of the total ingot length, has a uniform defect picture and narrow radial dopant and oxygen variations. The process in accordance with the Czochralski method involves bringing about a temperature distribution in the melt in the region of the solidification interface which deviates from rotational symmetry.
    Type: Application
    Filed: December 10, 2003
    Publication date: June 24, 2004
    Applicant: Wacker Siltronic AG
    Inventors: Martin Weber, Wilfried von Ammon, Herbert Schmidt, Janis Virbulis, Yuri Gelfgat, Leonid Gorbunov
  • Process and apparatus for producing a silicon single crystal
    Publication number: 20020092461
    Abstract: A process for producing a silicon single crystal is by pulling the single crystal from a silicon melt which is contained in a crucible with a diameter of at least 450 mm, above which a heat shield is arranged. The single crystal being pulled has a diameter of at least 200 mm. The silicon melt is exposed to the influence of a traveling magnetic field which exerts a substantially vertically oriented force on the melt in the region of the crucible wall. There is also an apparatus which is suitable for carrying out the process.
    Type: Application
    Filed: January 17, 2002
    Publication date: July 18, 2002
    Inventors: Janis Virbulis, Wilfried Von Ammon, Erich Tomzig, Yuri Gelfgat, Leonid Gorbunov
  • Process and apparatus for the growth of single crystals
    Patent number: 6001170
    Abstract: A process for the growth of a single crystal from semiconductor material by the Czochralski method, in which the melt is subjected to the influence of a magnetic field during the crystal growth and the magnetic field is generated by superposing a static magnetic field and an alternating magnetic field. An apparatus for carrying out the process, has a magnetic means which comprises two coils which are arranged around a crucible, one coil generating a static magnetic field and the other coil generating an alternating magnetic field.
    Type: Grant
    Filed: August 9, 1996
    Date of Patent: December 14, 1999
    Assignee: Wacker Siltronik Gesellschaft fur Halbleitermaterialien AG
    Inventors: Erich Tomzig, Werner Zulehner, Wilfried Von Ammon, Yu M Gelfgat, Leonid Gorbunov