Abstract: A method for forming a semiconductor device in a plasma processing chamber is provided. An atomic layer etch selectively etches SiO with respect to SiN and deposits a fluorinated polymer. The fluorinated polymer layer is stripped, comprising flowing a stripping gas comprising oxygen into the plasma processing chamber, forming a plasma from the stripping gas, and stopping the flow of the stripping gas. A SiN layer is selectively etched with respect to SiO and SiGe and Si.

Abstract: A method for forming a semiconductor device in a plasma processing chamber is provided. An atomic layer etch selectively etches SiO with respect to SiN and deposits a fluorinated polymer. The fluorinated polymer layer is stripped, comprising flowing a stripping gas comprising oxygen into the plasma processing chamber, forming a plasma from the stripping gas, and stopping the flow of the stripping gas. A SiN layer is selectively etched with respect to SiO and SiGe and Si.

Abstract: Methods for fabricating semiconductor structures having LowK dielectric properties are provided. In one example, a copper dual damascene structure is fabricated in a LowK dielectric insulator including forming a capping film over the insulator before features are defined therein. After the copper is formed in the features, the copper overburden is removed using ultra-gentle CMP, and then the barrier is removed using a dry etch process. Following barrier removal, a second etch is performed to thin the capping film. The thinning is configured to reduce the thickness of the capping film without removal, and thereby reducing the K-value of the LowK dielectric structure.