Abstract: The method provides for the growth of an epitaxial layer (200) made of a first semiconductor material on a substrate (100) made of a second semiconductor material; the materials are different and have different CTEs; the method comprises the steps of: A) patterning the substrate (100) by an etching process so to form an array of pillars (110), the pillars (110) being laterally spaced from each other and having a top section (112) larger than a bottom section (114) and/or intermediate sections (116), B) depositing the second semiconductor material on top of the pillars (110) at a growth temperature so to form an epitaxial layer (200) generated by vertical and lateral growth, and C) inducing breaking of the pillars (110) by cooling the substrate (100) and the epitaxial layer (200) below the growth temperature.

Abstract: A method for manufacturing a semiconductor structure with reduced bowing for applications in the field of power electronics, photonics, optoelectronics, solar energy conversion and the like, which comprises: a step of providing at least a first layer of a first semiconductor material, said first layer comprising a substrate of said first semiconductor material, which extends along a first reference plane, and a plurality of first portions of said first semiconductor material, which are mutually spaced and extend in elevation from said substrate along axes perpendicular to said first reference plane, said first portions having ends in distal position with respect to said substrate; a step of providing at least a second layer of a second semiconductor material, said second layer comprising second portions of said second semiconductor material, each of which is joined to the ends of a plurality of said first portions, said second portions being mutually spaced and extending along a second reference plane paralle

Abstract: A method for manufacturing a semiconductor structure with reduced bowing for applications in the field of power electronics, photonics, optoelectronics, solar energy conversion and the like, which comprises: a step of providing at least a first layer of a first semiconductor material, said first layer comprising a substrate of said first semiconductor material, which extends along a first reference plane, and a plurality of first portions of said first semiconductor material, which are mutually spaced and extend in elevation from said substrate along axes perpendicular to said first reference plane, said first portions having ends in distal position with respect to said substrate; a step of providing at least a second layer of a second semiconductor material, said second layer comprising second portions of said second semiconductor material, each of which is joined to the ends of a plurality of said first portions, said second portions being mutually spaced and extending along a second reference plane paralle

Abstract: Structures and methods for producing active layer stacks of lattice matched, lattice mismatched and thermally mismatched semiconductor materials, with low threading dislocation densities, no layer cracking and minimized wafer bowing, by using epitaxial growth onto elevated substrate regions in a mask-less process.

Abstract: The present invention relates to a device to convert the blue light from solid-state sources into white light, and includes a transparent polymer matrix with a laminar structure, diffusing particles and phosphors.

Abstract: The plant is suitable to produce a semiconductor film (8) having a desired thickness and consisting substantially of a compound including at least one element for each of the groups 11, 13, and 16 of the periodic classification of elements. The plant comprises an outer case (1) embedding a chamber (2) divided into one deposition zone (2a) and one evaporation zone (2b), which are separated by a screen (3) interrupted by at least one cylindrical transfer member provided with actuation means rotating about its axis (5). To the deposition zone (2a) a magnetron device (7) is associated, for the deposition by sputtering of at least one element for each of the groups 11 and 13 on the side surface (?) of the cylindrical member that is in the deposition zone (2a). To the evaporation zone (2b) a cell (10) for the evaporation of at least one element of the group 16 is associated, and such an evaporation zone (2b) houses a substrate (8a) on which the film (8) is produced.

Abstract: The plant is suitable to produce a semiconductor film (8) having a desired thickness and consisting substantially of a compound including at least one element for each of the groups 11, 13, and 16 of the periodic classification of elements. The plant comprises an outer case (1) embedding a chamber (2) divided into one deposition zone (2a) and one evaporation zone (2b), which are separated by a screen (3) interrupted by at least one cylindrical transfer member provided with actuation means rotating about its axis (5). To the deposition zone (2a) a magnetron device (7) is associated, for the deposition by sputtering of at least one element for each of the groups 11 and 13 on the side surface (?) of the cylindrical member that is in the deposition zone (2a). To the evaporation zone (2b) a cell (10) for the evaporation of at least one element of the group 16 is associated, and such an evaporation zone (2b) houses a substrate (8a) on which the film (8) is produced.

Abstract: Structures and methods for producing active layer stacks of lattice matched, lattice mismatched and thermally mismatched semiconductor materials, with low threading dislocation densities, no layer cracking and minimized wafer bowing, by using epitaxial growth onto elevated substrate regions in a mask-less process.