Abstract: A self-aligned technique for making metal-to-junction contacts in a shallow-junction large-scale-integrated device involves opening very small contact windows in the intermediate insulating layer of the device. These windows respectively overlie only limited central regions of the junctions. Impurities are then applied via the contact windows to provide deeper junction portions directly below the windows. As a result, metallic contact regions subsequently deposited in the windows are exactly aligned with respect to the deeper junction portions. Penetration or spiking of the junctions by the metallic regions is thereby significantly reduced.

Abstract: Submicron plasma trimming of a patterened resist material is combined with ion implantation techniques to achieve submicron control of lateral doping profiles. This makes possible the high-yield fabrication of, for example, bipolar microwave transitors of the self-aligned-emitter type. The basic technique can also be supplied to the fabrication of high performance insulted-gate field-effect transistors, junction-gate field-effect transistors and Schottky-barrier field-effect transistors.