Patents by Inventor Lequn Jennifer Liu

Lequn Jennifer Liu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Memory cells and methods of forming memory cells
    Patent number: 9324945
    Abstract: A method of forming a memory cell includes forming an outer electrode material elevationally over and directly against a programmable material. The programmable material and the outer electrode material contact one another along an interface. Protective material is formed elevationally over the outer electrode material. Dopant is implanted through the protective material into the outer electrode material and the programmable material and across the interface to enhance adhesion of the outer electrode material and the programmable material relative one another across the interface. Memory cells are also disclosed.
    Type: Grant
    Filed: August 6, 2013
    Date of Patent: April 26, 2016
    Assignee: Micron Technology, Inc.
    Inventors: Lequn Jennifer Liu, Stephen W. Russell, Fabio Pellizzer, Swapnil Lengade
  • Integrated Circuitry, Methods of Forming Capacitors, and Methods of Forming Integrated Circuitry Comprising an Array of Capacitors and Circuitry Peripheral to the Array
    Publication number: 20160027863
    Abstract: A method of forming capacitors includes providing a support material over a substrate. The support material is at least one of semiconductive or conductive. Openings are formed into the support material. The openings include at least one of semiconductive or conductive sidewalls. An insulator is deposited along the semiconductive and/or conductive opening sidewalls. A pair of capacitor electrodes having capacitor dielectric there-between is formed within the respective openings laterally inward of the deposited insulator. One of the pair of capacitor electrodes within the respective openings is laterally adjacent the deposited insulator. Other aspects are disclosed, including integrated circuitry independent of method of manufacture.
    Type: Application
    Filed: July 2, 2015
    Publication date: January 28, 2016
    Applicant: MICRON TECHNOLOGY, INC.
    Inventors: Brett W. Busch, Mingtao Li, Lequn Jennifer Liu, Kevin R. Shea, Belford T. Coursey, Jonathan T. Doebler
  • Methods of forming doped regions in semiconductor substrates
    Patent number: 9093367
    Abstract: Some embodiments include methods of forming one or more doped regions in a semiconductor substrate. Plasma doping may be used to form a first dopant to a first depth within the substrate. The first dopant may then be impacted with a second dopant to knock the first dopant to a second depth within the substrate. In some embodiments the first dopant is p-type (such as boron) and the second dopant is neutral type (such as germanium). In some embodiments the second dopant is heavier than the first dopant.
    Type: Grant
    Filed: June 27, 2013
    Date of Patent: July 28, 2015
    Assignee: Micron Technology, Inc.
    Inventors: Lequn Jennifer Liu, Shu Qin, Allen McTeer, Yongjun Jeff Hu
  • Memory Cells and Methods of Forming Memory Cells
    Publication number: 20150041749
    Abstract: A method of forming a memory cell includes forming an outer electrode material elevationally over and directly against a programmable material. The programmable material and the outer electrode material contact one another along an interface. Protective material is formed elevationally over the outer electrode material. Dopant is implanted through the protective material into the outer electrode material and the programmable material and across the interface to enhance adhesion of the outer electrode material and the programmable material relative one another across the interface. Memory cells are also disclosed.
    Type: Application
    Filed: August 6, 2013
    Publication date: February 12, 2015
    Applicant: Micron Technology, Inc.
    Inventors: Lequn Jennifer Liu, Stephen W. Russell, Fabio Pellizzer, Swapnil Lengade
  • Methods of Forming Doped Regions in Semiconductor Substrates
    Publication number: 20130288466
    Abstract: Some embodiments include methods of forming one or more doped regions in a semiconductor substrate. Plasma doping may be used to form a first dopant to a first depth within the substrate. The first dopant may then be impacted with a second dopant to knock the first dopant to a second depth within the substrate. In some embodiments the first dopant is p-type (such as boron) and the second dopant is neutral type (such as germanium). In some embodiments the second dopant is heavier than the first dopant.
    Type: Application
    Filed: June 27, 2013
    Publication date: October 31, 2013
    Inventors: Lequn Jennifer Liu, Shu Qin, Allen McTeer, Yongjun Jeff Hu
  • Methods of forming doped regions in semiconductor substrates
    Patent number: 8497194
    Abstract: Some embodiments include methods of forming one or more doped regions in a semiconductor substrate. Plasma doping may be used to form a first dopant to a first depth within the substrate. The first dopant may then be impacted with a second dopant to knock the first dopant to a second depth within the substrate. In some embodiments the first dopant is p-type (such as boron) and the second dopant is neutral type (such as germanium). In some embodiments the second dopant is heavier than the first dopant.
    Type: Grant
    Filed: November 12, 2012
    Date of Patent: July 30, 2013
    Assignee: Micron Technology, Inc.
    Inventors: Lequn Jennifer Liu, Shu Qin, Allen McTeer, Yongjun Jeff Hu