Patents by Inventor Leroy Ekarista Wibowo
Leroy Ekarista Wibowo has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11791202Abstract: A method used in forming a memory array comprises forming a stack comprising vertically-alternating first tiers and second tiers. A first insulator tier is above the stack. First insulator material of the first insulator tier comprises at least one of (a) and (b), where (a): silicon, nitrogen, and one or more of carbon, oxygen, boron, and phosphorus, and (b): silicon carbide. Channel-material strings are in the stack and in the first insulator tier. Conducting material is in the first insulator tier directly against sides of individual of the channel-material strings. A second insulator tier is formed above the first insulator tier and the conducting material. Second insulator material of the second insulator tier comprises at least one of the (a) and the (b). Conductive vias are formed and extend through the second insulator tier and that are individually directly electrically coupled to the individual channel-material strings through the conducting material.Type: GrantFiled: October 12, 2021Date of Patent: October 17, 2023Inventors: Lingyu Kong, David Daycock, Venkata Satyanarayana Murthy Kurapati, Leroy Ekarista Wibowo
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Patent number: 11672114Abstract: A method used in forming a memory array comprises forming a stack comprising vertically-alternating first tiers and second tiers. First insulator material is above the stack. The first insulator material comprises at least one of (a) and (b), where (a): silicon, nitrogen, and one or more of carbon, oxygen, boron, and phosphorus, and (b): silicon carbide. Channel-material strings are in and upwardly project from an uppermost material that is directly above the stack. Conducting material is directly against laterally-inner sides of individual of the upwardly-projecting channel-material strings and project upwardly from the individual upwardly-projecting channel-material strings. A ring comprising insulating material is formed individually circumferentially about the upwardly-projecting conducting material. Second insulator material is formed above the first insulator material, the ring, and the upwardly-projecting conducting material.Type: GrantFiled: August 9, 2021Date of Patent: June 6, 2023Assignee: Micron Technology, Inc.Inventors: Bharat Bhushan, David Daycock, Subramanian Krishnan, Leroy Ekarista Wibowo
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Publication number: 20220028733Abstract: A method used in forming a memory array comprises forming a stack comprising vertically-alternating first tiers and second tiers. A first insulator tier is above the stack. First insulator material of the first insulator tier comprises at least one of (a) and (b), where (a): silicon, nitrogen, and one or more of carbon, oxygen, boron, and phosphorus, and (b): silicon carbide. Channel-material strings are in the stack and in the first insulator tier. Conducting material is in the first insulator tier directly against sides of individual of the channel-material strings. A second insulator tier is formed above the first insulator tier and the conducting material. Second insulator material of the second insulator tier comprises at least one of the (a) and the (b). Conductive vias are formed and extend through the second insulator tier and that are individually directly electrically coupled to the individual channel-material strings through the conducting material.Type: ApplicationFiled: October 12, 2021Publication date: January 27, 2022Applicant: Micron Technology, Inc.Inventors: Lingyu Kong, David Daycock, Venkata Satyanarayana Murthy Kurapati, Leroy Ekarista Wibowo
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Publication number: 20210375902Abstract: A method used in forming a memory array comprises forming a stack comprising vertically-alternating first tiers and second tiers. First insulator material is above the stack. The first insulator material comprises at least one of (a) and (b), where (a): silicon, nitrogen, and one or more of carbon, oxygen, boron, and phosphorus, and (b): silicon carbide. Channel-material strings are in and upwardly project from an uppermost material that is directly above the stack. Conducting material is directly against laterally-inner sides of individual of the upwardly-projecting channel-material strings and project upwardly from the individual upwardly-projecting channel-material strings. A ring comprising insulating material is formed individually circumferentially about the upwardly-projecting conducting material. Second insulator material is formed above the first insulator material, the ring, and the upwardly-projecting conducting material.Type: ApplicationFiled: August 9, 2021Publication date: December 2, 2021Applicant: Micron Technology, Inc.Inventors: Bharat Bhushan, David Daycock, Subramanian Krishnan, Leroy Ekarista Wibowo
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Patent number: 11177159Abstract: A method used in forming a memory array comprises forming a stack comprising vertically-alternating first tiers and second tiers. A first insulator tier is above the stack. First insulator material of the first insulator tier comprises at least one of (a) and (b), where (a): silicon, nitrogen, and one or more of carbon, oxygen, boron, and phosphorus, and (b): silicon carbide. Channel-material strings are in the stack and in the first insulator tier. Conducting material is in the first insulator tier directly against sides of individual of the channel-material strings. A second insulator tier is formed above the first insulator tier and the conducting material. Second insulator material of the second insulator tier comprises at least one of the (a) and the (b). Conductive vias are formed and extend through the second insulator tier and that are individually directly electrically coupled to the individual channel-material strings through the conducting material.Type: GrantFiled: November 13, 2019Date of Patent: November 16, 2021Assignee: Micron Technology, Inc.Inventors: Lingyu Kong, David Daycock, Venkata Satyanarayana Murthy Kurapati, Leroy Ekarista Wibowo
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Patent number: 11121144Abstract: A method used in forming a memory array comprises forming a stack comprising vertically-alternating first tiers and second tiers. First insulator material is above the stack. The first insulator material comprises at least one of (a) and (b), where (a): silicon, nitrogen, and one or more of carbon, oxygen, boron, and phosphorus, and (b): silicon carbide. Channel-material strings are in and upwardly project from an uppermost material that is directly above the stack. Conducting material is directly against laterally-inner sides of individual of the upwardly-projecting channel-material strings and project upwardly from the individual upwardly-projecting channel-material strings. A ring comprising insulating material is formed individually circumferentially about the upwardly-projecting conducting material. Second insulator material is formed above the first insulator material, the ring, and the upwardly-projecting conducting material.Type: GrantFiled: November 13, 2019Date of Patent: September 14, 2021Assignee: Micron Technology, Inc.Inventors: Bharat Bhushan, David Daycock, Subramanian Krishnan, Leroy Ekarista Wibowo
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Publication number: 20210143164Abstract: A method used in forming a memory array comprises forming a stack comprising vertically-alternating first tiers and second tiers. First insulator material is above the stack. The first insulator material comprises at least one of (a) and (b), where (a): silicon, nitrogen, and one or more of carbon, oxygen, boron, and phosphorus, and (b): silicon carbide. Channel-material strings are in and upwardly project from an uppermost material that is directly above the stack. Conducting material is directly against laterally-inner sides of individual of the upwardly-projecting channel-material strings and project upwardly from the individual upwardly-projecting channel-material strings. A ring comprising insulating material is formed individually circumferentially about the upwardly-projecting conducting material. Second insulator material is formed above the first insulator material, the ring, and the upwardly-projecting conducting material.Type: ApplicationFiled: November 13, 2019Publication date: May 13, 2021Applicant: Micron Technology, Inc.Inventors: Bharat Bhushan, David Daycock, Subramanian Krishnan, Leroy Ekarista Wibowo
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Publication number: 20210143054Abstract: A method used in forming a memory array comprises forming a stack comprising vertically-alternating first tiers and second tiers. A first insulator tier is above the stack. First insulator material of the first insulator tier comprises at least one of (a) and (b), where (a): silicon, nitrogen, and one or more of carbon, oxygen, boron, and phosphorus, and (b): silicon carbide. Channel-material strings are in the stack and in the first insulator tier. Conducting material is in the first insulator tier directly against sides of individual of the channel-material strings. A second insulator tier is formed above the first insulator tier and the conducting material. Second insulator material of the second insulator tier comprises at least one of the (a) and the (b). Conductive vias are formed and extend through the second insulator tier and that are individually directly electrically coupled to the individual channel-material strings through the conducting material.Type: ApplicationFiled: November 13, 2019Publication date: May 13, 2021Applicant: Micron Technology, Inc.Inventors: Lingyu Kong, David Daycock, Venkata Satyanarayana Murthy Kurapati, Leroy Ekarista Wibowo