Patents by Inventor Leroy Luo

Leroy Luo has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Systems and methods for variable mode plasma enhanced processing of semiconductor wafers
    Patent number: 6379576
    Abstract: Variable mode plasma system and method for processing a semiconductor wafer. The modulation of the plasma potential relative to the semiconductor wafer is varied for different process steps. A capacitive shield may be selectively grounded to vary the level of capacitive coupling and modulation of the plasma. Process pressures, gases and power level may also be modified for different process steps. Plasma properties may easily be tailored to specific layers and materials being processed on the surface of the wafer. Variable mode processes may be adapted for (i) removal of photoresist after high-dose ion implant, (ii) post metal etch polymer removal, (iii) via clean, and (iv) other plasma enhanced processes.
    Type: Grant
    Filed: November 16, 1998
    Date of Patent: April 30, 2002
    Assignee: Mattson Technology, Inc.
    Inventors: Leroy Luo, Rene George, Stephen E. Savas, Craig Ranft, Wolfgang Helle, Robert Guerra
  • SYSTEMS AND METHODS FOR VARIABLE MODE PLASMA ENHANCED PROCESSING OF SEMICONDUCTOR WAFERS
    Publication number: 20020005392
    Abstract: Variable mode plasma system and method for processing a semiconductor wafer. The modulation of the plasma potential relative to the semiconductor wafer is varied for different process steps. A capacitive shield may be selectively grounded to vary the level of capacitive coupling and modulation of the plasma. Process pressures, gases and power level may also be modified for different process steps. Plasma properties may easily be tailored to specific layers and materials being processed on the surface of the wafer. Variable mode processes may be adapted for (i) removal of photoresist after high-dose ion implant, (ii) post metal etch polymer removal, (iii) via clean, and (iv) other plasma enhanced processes.
    Type: Application
    Filed: November 16, 1998
    Publication date: January 17, 2002
    Inventors: LEROY LUO, RENE GEORGE, STEPHEN E. SAVAS, CRAIG RANFT, WOLFGANG HELLE, ROBERT GUERRA