Abstract: An antenna that includes, in at least one embodiment, first and second radiating elements each having a substantially conical radiating surface. Each radiating surface may be substantially linearly conical or nonlinearly conical. The radiating surfaces are substantially aligned coaxially, and the radiating elements are positioned on opposing sides of a signal launching region, extending in opposing directions from the signal launching region. A signal feed extends through the first radiating element, thereby positioning a signal launch point between the first and second radiating elements in the signal launching region proximate vertices of the first and second radiating surfaces. The first and second radiating elements have first and second included angles, respectively, that are each no less than about 40 degrees.

Abstract: A low K dielectric composite layer is formed of a low k barrier layer and a low K dielectric layer on the barrier layer. The barrier layer, which is deposited with the result of having a hydrophobic top surface, is treated with an oxygen plasma to convert the surface from hydrophobic to hydrophilic. A subsequent water-based clean is very effective in removing yield-reducing defects on the barrier layer due to the conversion of the surface of the barrier layer. After the water-based clean, the low K dielectric layer is formed on the surface of the barrier layer to achieve the composite layer that has a low K.

Abstract: A low K dielectric composite layer is formed of a low k barrier layer and a low K dielectric layer on the barrier layer. The barrier layer, which is deposited with the result of having a hydrophobic top surface, is treated with an oxygen plasma to convert the surface from hydrophobic to hydrophilic. A subsequent water-based clean is very effective in removing yield-reducing defects on the barrier layer due to the conversion of the surface of the barrier layer. After the water-based clean, the low K dielectric layer is formed on the surface of the barrier layer to achieve the composite layer that has a low K.

Abstract: A semiconductor wafer processing apparatus (10) includes a front-end robot (28), a wafer scrubber/dryer (30), a moisture detector (34) and a load/lock chamber (38, 40). The front-end robot (28) moves a wafer to be processed between the wafer cassette (21-24), the wafer scrubber (30), the moisture detector (34) and the load/lock chamber (38, 40). Optionally, the load/lock chamber (38, 40) may include an additional moisture detector. The load/lock chamber (38, 40) functions as an interface to a vacuum processing chamber (50, 52, 54) for performing various deposition processing steps where introduction of moisture would be destructive to the wafer.