Abstract: The present invention provides a method for using ion filtering to adjust the number of ions delivered to a substrate. The method comprising a process chamber being provided that is operatively connected to a plasma source. The substrate is provided on a substrate support that is provided within the process chamber. An electrical bias source is provided that is operatively connected to an aperture plate that is provided in the process chamber. The substrate on the substrate support is processed using a plasma generated using the plasma source. A variable bias voltage from the electrical bias source is applied to the aperture plate during the plasma processing of the substrate. The plasma processing of the substrate can further comprise exposing the substrate to a plasma time division multiplex process which alternates between deposition and etching on the substrate.

Abstract: The present invention provides an improved plasma source configuration comprising a vacuum chamber having the source. A dielectric member is in communication with the vacuum chamber and surrounded by the plasma source. A high aspect ratio gap is formed between a film breaker and the dielectric member.

Abstract: The present invention provides a method for dicing a substrate on a composite film. A work piece having a support film, a frame and a substrate is provided. The substrate has a top surface and a bottom surface. The top surface of the substrate has at least one die region and at least one street region. The composite film is interposed between the substrate and the support film. Substrate material is etched from the at least one street region to expose a portion of the composite film using a substrate etch process. A first component of the composite film is etched using a first etch process. A second component of the exposed portion of the composite film is plasma etched using a second etch process.

Abstract: The present invention provides a method for using ion filtering to adjust the number of ions delivered to a substrate. The method comprising a process chamber being provided that is operatively connected to a plasma source. The substrate is provided on a substrate support that is provided within the process chamber. An electrical bias source is provided that is operatively connected to an aperture plate that is provided in the process chamber. The substrate on the substrate support is processed using a plasma generated using the plasma source. A variable bias voltage from the electrical bias source is applied to the aperture plate during the plasma processing of the substrate. The plasma processing of the substrate can further comprise exposing the substrate to a plasma time division multiplex process which alternates between deposition and etching on the substrate.

Abstract: The present invention provides a method for dicing a substrate on a composite film. A work piece having a support film, a frame and a substrate is provided. The substrate has a top surface and a bottom surface. The top surface of the substrate has at least one die region and at least one street region. The composite film is interposed between the substrate and the support film. Substrate material is etched from the at least one street region to expose a portion of the composite film using a substrate etch process. A first component of the composite film is etched using a first etch process. A second component of the exposed portion of the composite film is plasma etched using a second etch process.

Abstract: The present invention provides a method for dicing a substrate on a composite film. The method comprising the provision of a work piece having a support film, a frame and a substrate. The substrate has a top surface and a bottom surface. The top surface of the substrate has at least one die region and at least one street region. The composite film is adhered to the substrate and to the support film. Substrate material is removed from the at least one street region to expose a portion of the composite film. The exposed composite film is removed from the at least one street region. A first component of the exposed portion of the composite film is plasma etched. A second component of the composite film is removed by applying a force to the composite film.

Abstract: The present invention provides a method for using ion filtering to adjust the number of ions delivered to a substrate. The method comprising a process chamber being provided that is operatively connected to a plasma source. The substrate is provided on a substrate support that is provided within the process chamber. An electrical bias source is provided that is operatively connected to an aperture plate that is provided in the process chamber. The substrate on the substrate support is processed using a plasma generated using the plasma source. A variable bias voltage from the electrical bias source is applied to the aperture plate during the plasma processing of the substrate. The plasma processing of the substrate can further comprise exposing the substrate to a plasma time division multiplex process which alternates between deposition and etching on the substrate.

Abstract: Methods are disclosed for depositing material onto and/or etching material from a substrate in a surface processing tool having a processing chamber, a controller and one or more devices for adjusting the process parameters within the chamber. The method comprises: the controller instructing the one or more devices according to a series of control steps, each control step specifying a defined set of process parameters that the one or more devices are instructed to implement, wherein at least one of the control steps comprises the controller instructing the one or more devices to implement a defined set of constant process parameters for the duration of the step, including at least a chamber pressure and gas flow rate through the chamber, which duration is less than the corresponding gas residence time (Tgr) of the processing chamber for the step.

Abstract: Methods are disclosed for depositing material onto and/or etching material from a substrate in a surface processing tool having a processing chamber, a controller and one or more devices for adjusting the process parameters within the chamber. The method comprises: the controller instructing the one or more devices according to a series of control steps, each control step specifying a defined set of process parameters that the one or more devices are instructed to implement, wherein at least one of the control steps comprises the controller instructing the one or more devices to implement a defined set of constant process parameters for the duration of the step, including at least a chamber pressure and gas flow rate through the chamber, which duration is less than the corresponding gas residence time (Tgr) of the processing chamber for the step.

Abstract: A slotted conducting cylinder (11) surrounds a reactor chamber body (10) and is in turn surrounded by an antenna (12). The cylinder (11) can be grounded during normal operation of plasma processing apparatus, but when RF driven it serves to enhance capacitive coupling with the plasma causing the inner surface (16) of the body (10) to become charged and hence the plasma will sputter clean the inner surface (16).

Abstract: A plasma processing apparatus includes a chamber having a support for a substrate, and at least one gas inlet into the chamber. The apparatus is configured to alternately introduce an etch gas and a deposition gas into the chamber through the at least on gas inlet, and to strike a plasma into the etch gas and the deposition gas alternately introduced into the chamber. The apparatus is further equipped with an attenuation device for reducing and/or homogenizing the ion flux from the plasma substantially without affecting the neutral radical number density.

Abstract: A workpiece is processed in a chamber by striking a plasma in the chamber, treating the workpiece by cyclically adjusting the processing parameters between at least a first step having a first set of processing parameters and a second step having a second set of process parameters, wherein the plasma is stabilized during the transition between the first and second steps. These steps may comprise cyclic etch and deposition steps. One possibility for stabilizing the plasma is by matching the impedance of the plasma to the impedance of the power supply which provides energy to the plasma, by means of a matching unit which can be controlled in a variety of ways depending upon the step type or time during the step. Another possibility is to prevent or reduce substantially variation in the pressure in the chamber between the first and second steps.

Abstract: A ClF3 gas generation system is provided with supply sources of chlorine (3) (for example a cylinder of compressed chlorine) and fluorine (4) (for example a fluorine generator) connected into a gas reaction chamber (2) enabling generation of ClF3 gas. The reaction chamber has a valved outlet (C) for the supply of the ClF3 gas to a process chamber for immediate local use.

Abstract: A substrate is treated by supplying an etchant and/or deposition gas into a chamber in which the substrate is situated. In order to avoid the problems associated with transportation of toxic gases, the gases required for such processes are delivered directly from a gas generation and delivery system positioned locally to the chamber.

Abstract: A workpiece support includes a support body having a surface for supporting a workpiece thereon, and at least one Langmuir probe embedded within the support body. The Langmuir probe is covered by a layer of semiconductor or insulator. The workpiece support further includes a mechanism for intermittently feeding RF power to Langmuir probe, and for measuring a discharge of a capacitor in series with the Langmuir probe while the RF power is not supplied to the Langmuir probe.

Abstract: A plasma processing apparatus includes a processing chamber having a working volume. A single Radio-Frequency (RF) plasma generating antenna is positioned outside the working volume for inducing an electric field in the working volume. A dielectric trough extends into a wall of the chamber. The antenna is non-planar and transfers power through at least one wall and the base of the trough.

Abstract: A solenoidal magnetic field generated by a coil around the upper chamber A acts as a magnetic plasma attenuator. By judicious adjustment of the magnetic field strength, a dense plasma region forms inside the tube and adjacent to an antenna and is at least partially trapped by the field lines. These field lines intersect the wall of the upper chamber near or on the lid, and either on the upper chamber wall near its base, or on the lid or upper walls of the lower chamber. Significant numbers of radicals can be created in the upper chamber, which then diffuse into the lower chamber. The associated ion flux is reduced, however, because of losses where the field lines intersect the walls, thereby ensuring that the ratio of ion numbers to radical numbers reaching the wafer is reduced.

Abstract: A plurality of antennae generate a plasma in the chamber containing a workpiece, and the relative outputs of the antennae are varied as a detector detects a property or parameter of the resultant plasma or process. The relative outputs of the antennae are controlled in accordance with the property or parameter detected. The detector, which detects the property or parameter at or near the workpiece location, is a Langmuir probe which is shielded from the plasma by a semiconductor or insulating layer and is driven.

Abstract: A wafer processing chamber includes a wafer support, a dielectric window and coaxial coils located outside the dielectric window for inducing a plasma within the chamber. A variety of coil/dielectric windows are described together with protocols for their control.

Abstract: This invention relates to plasma processing apparatus and methods. Apparatus includes a chamber, a wafer support, antennae, a control module for controlling the antennae and responsive to associated detectors, which are located in or adjacent the wafer.