Patents by Inventor Leslie Salem

Leslie Salem has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20090294704
    Abstract: A system and method for millimeter wave imaging, comprises at least one illumination source (10) of a millimeter wave beam; a diffuser array (12) comprising a plurality of diffuser elements (12) for diffusing the beam from the illumination source (12) across the desired sector; and at least one camera (16) for obtaining an image of one or more illuminated subjects within the desired sector.
    Type: Application
    Filed: June 5, 2006
    Publication date: December 3, 2009
    Inventors: Eitan Zailer, Zvi Zlotnick, Leslie Salem, Shimon Peled
  • Patent number: 7306367
    Abstract: A method and system for measuring remotely the surface temperature of a silicon wafer and layers, without the need to know the surface emissivity. The surface temperature is measured in-situ and in real-time during a high-temperature process, in a vacuum system, by using the linear polarization property of radiation. A blackbody source is heated to various, known temperatures, and provides radiation that impinges on the silicon surface and is reflected from it together with a self-emitted component. This combined reflected radiation is polarized and filtered to an appropriate wavelength, and observed with an imaging camera. Pairs of orthogonally polarized images of the surface are obtained for a set silicon surface temperature and for each blackbody temperature. The pairs of images are analyzed, pixel by pixel, to obtain a null polar level indicative of the surface temperature.
    Type: Grant
    Filed: January 23, 2002
    Date of Patent: December 11, 2007
    Assignee: Electro-Optics Research & Development Ltd.
    Inventors: Leslie Salem, Eitan Zeiler, Omri Govrin
  • Publication number: 20070056940
    Abstract: A method and system for measuring remotely the surface temperature of a silicon wafer and layers, without the need to know the surface emissivity. The surface temperature is measured in-situ and in real-time during a high-temperature process, in a vacuum system, by using the linear polarization property of radiation. A blackbody source is heated to various, known temperatures, and provides radiation that impinges on the silicon surface and is reflected from it together with a self-emitted component. This combined reflected radiation is polarized and filtered to an appropriate wavelength, and observed with an imaging camera. Pairs of orthogonally polarized images of the surface are obtained for a set silicon surface temperature and for each blackbody temperature. The pairs of images are analyzed, pixel by pixel, to obtain a null polar level indicative of the surface temperature.
    Type: Application
    Filed: January 23, 2002
    Publication date: March 15, 2007
    Inventors: Leslie Salem, Eitan Zeiler, Omri Govrin