Patents by Inventor Leslie W. Arkless

Leslie W. Arkless has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Post etch cleaning composition for dual damascene system
    Patent number: 7157415
    Abstract: A new cleaning chemistry based on a choline compound, such as choline hydroxide, is provided in order to address the problem of dual damascene fabrication. An etch stop inorganic layer at the bottom of a dual damascene structure protects the underlying interconnect of copper and allows a better cleaning. A two step etch process utilizing the etch stop layer is used to achieve the requirements of ULSI manufacturing in a dual damascene structure.
    Type: Grant
    Filed: December 4, 2001
    Date of Patent: January 2, 2007
    Assignee: EKC Technology, Inc.
    Inventors: Catherine M. Peyne, David J. Maloney, Shihying Lee, Wai Mun Lee, Leslie W. Arkless
  • Post etch cleaning composition for dual damascene system
    Publication number: 20020134963
    Abstract: A new cleaning chemistry based on a choline compound, such as choline hydroxide, is provided in order to address the problem of dual damascene fabrication. An etch stop inorganic layer at the bottom of a dual damascene structure protects the underlying interconnect of copper and allows a better cleaning. A two step etch process utilizing the etch stop layer is used to achieve the requirements of ULSI manufacturing in a dual damascene structure.
    Type: Application
    Filed: December 4, 2001
    Publication date: September 26, 2002
    Applicant: EKC Technology, Inc.
    Inventors: Catherine M. Peyne, David J. Maloney, Shihying Lee, Wai Mun Lee, Leslie W. Arkless
  • Post etch cleaning composition and process for dual damascene system
    Patent number: 6417112
    Abstract: A new cleaning chemistry based on a choline compound, such as choline hydroxide, is provided in order to address the problem of dual damascene fabrication. An etch stop inorganic layer at the bottom of a dual damascene structure protects the underlying interconnect of copper and allows a better cleaning. A two step etch process utilizing the etch stop layer is used to achieve the requirements of UISI manufacturing in a dual damascene structure.
    Type: Grant
    Filed: June 30, 1999
    Date of Patent: July 9, 2002
    Assignee: EKC Technology, Inc.
    Inventors: Catherine M. Peyne, David J. Maloney, Shihying Lee, Wai Mun Lee, Leslie W. Arkless