Abstract: The RF power passing through a given position in a monolithic microwave integrated circuit (MMIC) is determined using the Seebeck effect. The MMIC includes at least certain components of a voltage creating circuit, including a first Seebeck junction on the MMIC at a given position and a second Seebeck junction at a different position. The voltage generated between the two junctions as a result of differential heating caused by the passage of RF power through the given position is measured with a voltmeter. By calibration, the RF power is related to a measured Seebeck voltage created when the circuit is in operation and hence can be determined. The Seebeck circuitry may be independent of the MMIC circuitry or be integrated into the active circuitry of the MMIC itself.

Abstract: The RF power passing through a given position in a monolithic microwave integrated circuit (MMIC) is determined using the Seeback effect. The MMIC includes at least certain components of a voltage creating circuit, including a first Seebeck junction (1) on the MMIC at a given position and a second Seebeck junction (5) at a different position. The voltage generated between the two junctions (1, 5) as a result of differential heating caused by the passage of RF power through the given position is measured with a voltmeter (9). By calibration, the RF power is related to a measured Seebeck voltage created when the circuit is in operation and hence can be determined. The Seebeck circuitry may be independent of the MMIC circuitry or be integrated into the active circuitry of the MMIC itself.