Patents by Inventor Leszek Piotr Sierzputowski

Leszek Piotr Sierzputowski has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • METHOD OF OBTAINING BULK MONO-CRYSTALLINE GALLIUM-CONTAINING NITRIDE, BULK MONO-CRYSTALLINE GALLIUM-CONTAINING NITRIDE, SUBSTRATES MANUFACTURED THEREOF AND DEVICES MANUFACTURED ON SUCH SUBSTRATES
    Publication number: 20100327292
    Abstract: The invention is related to a method of obtaining bulk mono-crystalline gallium-containing nitride, comprising a step of seeded crystallization of mono-crystalline gallium-containing nitride from supercritical ammonia-containing solution, containing ions of Group I metals and ions of acceptor dopant, wherein at process conditions the molar ratio of acceptor dopant ions to supercritical ammonia-containing solvent is at least 0.0001. According to said method, after said step of seeded crystallization the method further comprises a step of annealing said nitride at the temperature between 950° C. and 1200° C., preferably between 950° C. and 1150° C. The invention covers also bulk mono-crystalline gallium-containing nitride, obtainable by the inventive method. The invention further relates to substrates for epitaxy made of mono-crystalline gallium-containing nitride and devices manufactured on such substrates.
    Type: Application
    Filed: June 24, 2010
    Publication date: December 30, 2010
    Applicant: AMMONO SP. Z O.O.
    Inventors: Robert Tomasz Dwilinski, Roman Marek Doradzinski, Leszek Piotr Sierzputowski, Jerzy Garczynski, Mariusz Rudzinski
  • Bulk monocrystalline gallium nitride
    Patent number: 7744697
    Abstract: The present invention refers to an ammonobasic method for preparing a gallium-containing nitride crystal, in which gallium-containing feedstock is crystallized on at least one crystallization seed in the presence of an alkali metal-containing component in a supercritical nitrogen-containing solvent. The method can provide monocrystalline gallium-containing nitride crystals having a very high quality.
    Type: Grant
    Filed: October 14, 2003
    Date of Patent: June 29, 2010
    Assignees: Nichia Corporation, Ammono SP. Z O.O.
    Inventors: Robert Tomasz Dwiliński, Roman Marek Doradziński, Jerzy Garczyński, Leszek Piotr Sierzputowski, Yasuo Kanbara
  • Process and apparatus for obtaining bulk monocrystalline gallium-containing nitride
    Patent number: 7160388
    Abstract: The present invention refers to an ammonobasic method for preparing a gallium-containing nitride crystal, in which gallium-containing feedstock is crystallized on at least one crystallization seed in the presence of an alkali metal-containing component in a supercritical nitrogen-containing solvent. The method can provide monocrystalline gallium-containing nitride crystals having a very high quality.
    Type: Grant
    Filed: May 17, 2002
    Date of Patent: January 9, 2007
    Assignees: Nichia Corporation, Ammono Sp. z o.o.
    Inventors: Robert Tomasz Dwiliński, Roman Marek Doradziński, Jerzy Garczyński, Leszek Piotr Sierzputowski, Yasuo Kanbara
  • Bulk monocrystalline gallium nitride
    Publication number: 20040089221
    Abstract: The present invention refers to an ammonobasic method for preparing a gallium-containing nitride crystal, in which gallium-containing feedstock is crystallized on at least one crystallization seed in the presence of an alkali metal-containing component in a supercritical nitrogen-containing solvent. The method can provide monocrystalline gallium-containing nitride crystals having a very high quality.
    Type: Application
    Filed: October 14, 2003
    Publication date: May 13, 2004
    Inventors: Robert Tomasz Dwilinski, Roman Marek Doradzinski, Jerzy Garczynski, Leszek Piotr Sierzputowski, Yasuo Kanbara
  • Bulk monocrystalline gallium nitride
    Patent number: 6656615
    Abstract: The present invention refers to an ammonobasic method for preparing a gallium-containing nitride crystal, in which gallium-containing feedstock is crystallized on at least one crystallization seed in the presence of an alkali metal-containing component in a supercritical nitrogen-containing solvent. The method can provide monocrystalline gallium-containing nitride crystals having a very high quality.
    Type: Grant
    Filed: May 17, 2002
    Date of Patent: December 2, 2003
    Assignees: Nichia Corporation, Ammono Sp. z o.o.
    Inventors: Robert Tomasz Dwiliński, Roman Marek Doradziński, Jerzy Garczyński, Leszek Piotr Sierzputowski, Yasuo Kanbara
  • Process and apparatus for obtaining bulk monocrystalline gallium-containing nitride
    Publication number: 20020189531
    Abstract: The present invention refers to an ammonobasic method for preparing a gallium-containing nitride crystal, in which gallium-containing feedstock is crystallized on at least one crystallization seed in the presence of an alkali metal-containing component in a supercritical nitrogen-containing solvent. The method can provide monocrystalline gallium-containing nitride crystals having a very high quality.
    Type: Application
    Filed: May 17, 2002
    Publication date: December 19, 2002
    Inventors: Robert Tomasz Dwilinski, Roman Marek Doradzinski, Jerzy Garczynski, Leszek Piotr Sierzputowski, Yasuo Kanbara
  • Bulk monocrystalline gallium nitride
    Publication number: 20020192507
    Abstract: The present invention refers to an ammonobasic method for preparing a gallium-containing nitride crystal, in which gallium-containing feedstock is crystallized on at least one crystallization seed in the presence of an alkali metal-containing component in a supercritical nitrogen-containing solvent. The method can provide monocrystalline gallium-containing nitride crystals having a very high quality.
    Type: Application
    Filed: May 17, 2002
    Publication date: December 19, 2002
    Inventors: Robert Tomasz Dwilinski, Roman Marek Doradzinski, Jerzy Garczynski, Leszek Piotr Sierzputowski, Yasuo Kanbara