Patents by Inventor Leszek Sierzputowski
Leszek Sierzputowski has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 8398767Abstract: Bulk mono-crystalline gallium-containing nitride, grown on the seed at least in the direction essentially perpendicular to the direction of the seed growth, essentially without propagation of crystalline defects as present in the seed, having the dislocation density not exceeding 104/cm2 and considerably lower compared to the dislocation density of the seed, and having a large curvature radius of the crystalline lattice, preferably longer than 15 m, more preferably longer than 30 m, and most preferably of about 70 m, considerably longer than the curvature radius of the crystalline lattice of the seed.Type: GrantFiled: June 10, 2005Date of Patent: March 19, 2013Assignees: Ammono S.A., Nichia CorporationInventors: Robert Dwilinski, Roman Doradzinski, Jerzy Garczynski, Leszek Sierzputowski, Yasuo Kanbara, Robert Kucharski
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Patent number: 8110848Abstract: The substrate is used for opto-electric or electrical devices and comprises a layer of nitride grown by means of vapor phase epitaxy growth wherein both main surfaces of the nitride substrate are substantially consisting of non N-polar face and N-polar face respectively and the dislocation density of the substrate is 5×105/cm2 or less. Therefore, the template type substrate has a good dislocation density and a good value of FWHM of the X-ray rocking curve from (0002) plane less than 80, so that the resulting template type substrate is very useful for the epitaxy substrate from gaseous phase such as MOCVD, MBE and HVPE, resulting in possibility of making good opto-electric devices such as Laser Diode and large-output LED and good electric devices such as MOSFET.Type: GrantFiled: June 16, 2008Date of Patent: February 7, 2012Assignees: Ammono Sp. z o.o., Nichia CorporationInventors: Robert Dwilinski, Roman Doradzinski, Jerzy Garczynski, Leszek Sierzputowski, Yasuo Kanbara
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Patent number: 7935550Abstract: The object of this invention is to provide a high-output type nitride light emitting device. The nitride light emitting device comprises an n-type nitride semiconductor layer or layers, a p-type nitride semiconductor layer or layers and an active layer therebetween, wherein a gallium-containing nitride substrate is obtained from a gallium-containing nitride bulk single crystal, provided with an epitaxial growth face with dislocation density of 105/cm2 or less, and A-plane or M-plane which is parallel to C-axis of hexagonal structure for an epitaxial face, wherein the n-type semiconductor layer or layers are formed directly on the A-plane or M-plane. In case that the active layer comprises a nitride semiconductor containing In, an end face film of single crystal AlxGa1-xN (0?x?1) can be formed at a low temperature not causing damage to the active layer.Type: GrantFiled: January 4, 2008Date of Patent: May 3, 2011Assignees: AMMONO Sp. z o.o., Nichia CorporationInventors: Robert Dwilinski, Roman Doradzinski, Jerzy Garczynski, Leszek Sierzputowski, Yasuo Kanbara
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Patent number: 7905957Abstract: The present invention is related to a process for obtaining a larger area substrate of mono-crystalline gallium-containing nitride by making selective crystallization of gallium containing nitride on a smaller seed under a crystallization temperature and/or pressure from a supercritical ammonia-containing solution made by dissolution of gallium-containing feedstock in a supercritical ammonia-containing solvent with alkali metal ions, comprising: providing two or more elementary seeds, and making selective crystallization on the two or more separate elementary seeds to get a merged larger compound seed. The merged larger compound seed is used for a seed in a new growth process and then to get a larger substrate of mono-crystal gallium-containing nitride.Type: GrantFiled: November 28, 2005Date of Patent: March 15, 2011Assignees: Ammono Sp. Z.O.O., Nichia CorporationInventors: Robert Dwilinski, Roman Doradzinski, Jerzy Garczynski, Leszek Sierzputowski, Yasuo Kanbara
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Patent number: 7871843Abstract: The object of this invention is to provide a high-output type nitride light emitting device. The nitride light emitting device comprises an n-type nitride semiconductor layer, a p-type nitride semiconductor layer and an active layer therebetween, wherein the light emitting device comprises a gallium-containing nitride semiconductor layer prepared by crystallization from supercritical ammonia-containing solution in the nitride semiconductor layer.Type: GrantFiled: April 24, 2008Date of Patent: January 18, 2011Assignees: Ammono. Sp. z o.o., Nichia CorporationInventors: Robert Dwilinski, Roman Doradzinski, Jerzy Garczynski, Leszek Sierzputowski, Yasuo Kanbara
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Patent number: 7811380Abstract: A process for obtaining bulk mono-crystalline gallium-containing nitride, liminating impurities from the obtained crystal and manufacturing substrates made of bulk mono-crystalline gallium-containing nitride has been now proposed.Type: GrantFiled: December 11, 2003Date of Patent: October 12, 2010Assignees: Ammono Sp. z o.o., Nichia CorporationInventors: Robert Dwilinski, Roman Doradzinski, Jerzy Garczynski, Leszek Sierzputowski, Yasuo Kanbara
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Patent number: 7750355Abstract: The object of this invention is to provide a high-output type nitride light emitting device. The nitride light emitting device comprises an n-type nitride semiconductor layer or layers, a p-type nitride semiconductor layer or layers and an active layer therebetween, wherein a gallium-containing nitride substrate is obtained from a gallium-containing nitride bulk single crystal, provided with an epitaxial growth face with dislocation density of 105/cm2 or less, and A-plane or M-plane which is parallel to C-axis of hexagonal structure for an epitaxial face, wherein the n-type semiconductor layer or layers are formed directly on the A-plane or M-plane. In case that the active layer comprises a nitride semiconductor containing In, an end face film of single crystal AlxGa1-xN (0?x?1) can be formed at a low temperature not causing damage to the active layer.Type: GrantFiled: October 28, 2002Date of Patent: July 6, 2010Assignees: AMMONO Sp. z o.o., Nichia CorporationInventors: Robert Dwilinski, Roman Doradzinski, Jerzy Garczynski, Leszek Sierzputowski, Yasuo Kanbara
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Publication number: 20090315012Abstract: The object of this invention is to provide a high-output type nitride light emitting device. The nitride light emitting device comprises an n-type nitride semiconductor layer, a p-type nitride semiconductor layer and an active layer therebetween, wherein the light emitting device comprises a gallium-containing nitride semiconductor layer prepared by crystallization from supercritical ammonia-containing solution in the nitride semiconductor layer.Type: ApplicationFiled: April 24, 2008Publication date: December 24, 2009Applicants: AMMONO, Sp. zo.o, NICHIA CORPORATIONInventors: Robert Dwilinski, Roman Doradzinski, Jerzy Garczynski, Leszek Sierzputowski, Yasuo Kanbara
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Patent number: 7589358Abstract: A light emitting device having a phosphor substrate, which comprises nitride containing at least one element selected from Group XIII (IUPAC 1989) having a general formula XN, wherein X is at least one element selected from B, Al, Ga and In, a general formula XN:Y, wherein X is at least one element selected from B, Al, Ga and In, and Y is at least one element selected from Be, Mg, Ca, Sr, Ba, Zn, Cd and Hg, or a general formula XN:Y,Z, wherein X is at least one element selected from B, Al, Ga and In, Y is at least one element selected from Be, Mg, Ca, Sr, Ba, Zn, Cd and Hg, and Z is at least one element selected from C, Si, Ge, Sn, Pb, O and S. The phosphor substrate is prepared by crystallization from supercritical ammonia-containing solution and the light emitting device is formed by a vapor phase growth on the phosphor substrate so as to obtain a light emitting device which has a wavelength distribution emitting a white light etc. and a good yield.Type: GrantFiled: December 13, 2002Date of Patent: September 15, 2009Assignees: AMMONO Sp. z o.o., Nichia CorporationInventors: Robert Dwilinski, Roman Doradzinski, Jerzy Garczynski, Leszek Sierzputowski, Yasuo Kanbara
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Publication number: 20080311393Abstract: The substrate is used for opto-electric or electrical devices and comprises a layer of nitride grown by means of vapor phase epitaxy growth wherein both main surfaces of the nitride substrate are substantially consisting of non N-polar face and N-polar face respectively and the dislocation density of the substrate is 5×105/cm2 or less. Therefore, the template type substrate has a good dislocation density and a good value of FWHM of the X-ray rocking curve from (0002) plane less than 80, so that the resulting template type substrate is very useful for the epitaxy substrate from gaseous phase such as MOCVD, MBE and HVPE, resulting in possibility of making good opto-electric devices such as Laser Diode and large-output LED and good electric devices such as MOSFET.Type: ApplicationFiled: June 16, 2008Publication date: December 18, 2008Inventors: Robert Dwilinski, Roman Doradzinski, Jerzy Garczynski, Leszek Sierzputowski, Yasuo Kanbara
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Publication number: 20080303032Abstract: Bulk monocrystalline gallium-containing nitride, grown on the seed at least in the direction essentially perpendicular to the direction of the seed growth, essentially without propagation of crystalline defects as present in the seed, having the dislocation density not exceeding 104/cm2 and considerably lower compared to the dislocation density of the seed, and having a large curvature radius of the crystalline lattice, preferably longer than 15 m, more preferably longer than 30 m, and most preferably of about 70 m, considerably longer than the curvature radius of the crystalline lattice of the seed.Type: ApplicationFiled: June 10, 2005Publication date: December 11, 2008Inventors: Robert Dwilinski, Roman Doradzinski, Jerzy Garczynski, Leszek Sierzputowski, Yasuo Kanbara, Robert Kucharski
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Patent number: 7422633Abstract: The present invention provides a process for forming a bulk monocrystalline gallium-containing nitride, i.e. GaN etc., on the surface of heterogeneous substrate, i.e. SiC etc., comprising the steps of forming a supercritical ammonia solvent containing ion or ions of alkali metals in an autoclave, dissolving a gallium-containing feedstock in the supercritical ammonia solvent to form a supercritical solution in which the feedstock is dissolved, and crystallizing gallium-containing nitride on the face of a seed which contains no element of oxygen and has a lattice constant of 2.8 to 3.6 with respect to ao-axis from the supercritical solution, under a condition of a higher temperature and/or a lower pressure than the temperature and/or the pressure where the gallium-containing feedstock is dissolved in the supercritical solvent. Therefore nitride gallium system compound semiconductor device can be formed on a conductive substrate.Type: GrantFiled: June 6, 2002Date of Patent: September 9, 2008Assignees: Ammono SP. ZO. O., Nichia CorporationInventors: Robert Dwilinski, Roman Doradzinski, Jerzy Garczynski, Leszek Sierzputowski, Yasuo Kanbara
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Patent number: 7410539Abstract: The template type substrate is used for opto-electric or electrical devices and comprises A) a layer of bulk mono-crystal nitride containing at least one element of alkali metals (Group I, IUPAC 1989) and B) a layer of nitride grown by means of vapor phase epitaxy growth wherein the layer A) and the layer B) are combined at non N-polar face of the layer A) and N-polar face of the layer B). Therefore, the template type substrate has a good dislocation density and a good value of FWHM of the X-ray rocking curve from (0002) plane less than 80, so that the resulting template type substrate is very useful for the epitaxy substrate from gaseous phase such as MOCVD, MBE and HVPE, resulting in possibility of making good opto-electric devices such as Laser Diode and large-output LED and good electric devices such as MOSFET.Type: GrantFiled: December 11, 2003Date of Patent: August 12, 2008Assignees: Ammono Sp. z o.o., Nichia CorporationInventors: Robert Dwilinski, Roman Doradzinski, Jerzy Garczynski, Leszek Sierzputowski, Yasuo Kanbara
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Publication number: 20080156254Abstract: The present invention is related to a process for obtaining a larger area substrate of mono-crystalline gallium-containing nitride by making selective crystallization of gallium containing nitride on a smaller seed under a crystallization temperature and/or pressure from a supercritical ammonia-containing solution made by dissolution of gallium-containing feedstock in a supercritical ammonia-containing solvent with alkali metal ions, comprising: providing two or more elementary seeds, and making selective crystallization on the two or more separate elementary seeds to get a merged larger compound seed. The merged larger compound seed is used for a seed in a new growth process and then to get a larger substrate of mono-crystal gallium-containing nitride.Type: ApplicationFiled: November 28, 2005Publication date: July 3, 2008Applicants: AMMONO Sp. z o.o., NICHIA CORPORATIONInventors: Robert Dwilinski, Roman Doradzinski, Jerzy Garczynski, Leszek Sierzputowski, Yasuo Kanbara
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Patent number: 7387677Abstract: The substrate is used for opto-electric or electrical devices and comprises a layer of nitride grown by means of vapor phase epitaxy growth wherein both main surfaces of the nitride substrate are substantially consisting of non N-polar face and N-polar face respectively and the dislocation density of the substrate is 5×105/cm2 or less. Therefore, the template type substrate has a good dislocation density and a good value of FWHM of the X-ray rocking curve from (0002) plane less than 80, so that the resulting template type substrate is very useful for the epitaxy substrate from gaseous phase such as MOCVD, MBE and HVPE, resulting in possibility of making good opto-electric devices such as Laser Diode and large-output LED and good electric devices such as MOSFET.Type: GrantFiled: December 11, 2003Date of Patent: June 17, 2008Assignees: AMMONO Sp. z o.o., Nichia CorporationInventors: Robert Dwilinski, Roman Doradzinski, Jerzy Garczynski, Leszek Sierzputowski, Yasuo Kanbara
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Patent number: 7374615Abstract: The present invention provides a process for forming a bulk monocrystalline aluminum nitride by using a supercritical ammonia. The process comprises the steps of forming a supercritical solvent containing ions of an alkali metal in an autoclave; and dissolving a feedstock in this supercritical solvent to form a supercritical solution, and simultaneously or separately crystallizing aluminum nitride on the face of a crystallization seed. This process is carried out in the autoclave (1) which is provided with a convection-controller (2) arranged therein and which is to produce a supercritical solvent. The autoclave is set in a furnace unit (4) equipped with a heater (5) and/or a cooler (6).Type: GrantFiled: June 6, 2002Date of Patent: May 20, 2008Assignees: Ammono.SP.ZO.O, Nichia CorporationInventors: Robert Dwilinski, Roman Doradzinski, Jerzy Garczynski, Leszek Sierzputowski, Yasuo Kanbara
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Publication number: 20080108162Abstract: The object of this invention is to provide a high-output type nitride light emitting device. The nitride light emitting device comprises an n-type nitride semiconductor layer or layers, a p-type nitride semiconductor layer or layers and an active layer therebetween, wherein a gallium-containing nitride substrate is obtained from a gallium-containing nitride bulk single crystal, provided with an epitaxial growth face with dislocation density of 105/cm2 or less, and A-plane or M-plane which is parallel to C-axis of hexagonal structure for an epitaxial face, wherein the n-type semiconductor layer or layers are formed directly on the A-plane or M-plane. In case that the active layer comprises a nitride semiconductor containing In, an end face film of single crystal AlxGa1-xN (0?x?1) can be formed at a low temperature not causing damage to the active layer.Type: ApplicationFiled: January 4, 2008Publication date: May 8, 2008Applicants: Ammono SP.ZO.O, Nichia CorporationInventors: Robert DWILINSKI, Roman Doradzinski, Jerzy Garczynski, Leszek Sierzputowski, Yasuo Kanbara
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Publication number: 20080067523Abstract: The invention relates to a new High Electron Mobility Transistor (HEMT), made essentially of layers of Group XIII element(s) nitride(s). Contrary to currently available transistors of this type, the transistor according to the invention is produced on a homosubstrate made of gallium-containing nitride, has no nucleation layer and its buffer layer is remarkably thinner than in known HEMTs. Preferably, at least the buffer layer, being a part of the transistor according to the present invention, is produced by epitaxial methods and the direction of growth of said layer in an epitaxial process is essentially perpendicular to the direction of growth of the substrate. The invention relates also to a method of manufacturing of High Electron Mobility Transistor (HEMT).Type: ApplicationFiled: June 10, 2005Publication date: March 20, 2008Inventors: Robert Dwilinski, Roman Doradzinski, Jerzy Garczynski, Leszek Sierzputowski, Yasuo Kanbara
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Publication number: 20080050855Abstract: The present invention relates to a nitride semiconductor laser device provided with a window layer on a light-emitting end face of the resonator which comprises an active layer of nitride semiconductor between the n-type nitride semiconductor layers and the p-type nitride semiconductor layers, in which at least the radiation-emitting end face of said resonator is covered by said window layer comprising monocrystalline nitride of general formula AlxGa1-x-yInyN, where 0?x+y?1, 0?x?1 and 0?y<1, having a wider energy gap than that of the active layer and being formed at a low temperature so as not to damage said active layer.Type: ApplicationFiled: October 22, 2007Publication date: February 28, 2008Inventors: Robert DWILINSKI, Roman DORADZINSKI, Jerzy GARCZYNSKI, Leszek SIERZPUTOWSKI, Yasuo KANBARA
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Patent number: 7314517Abstract: An improved mineralizer used for a process for obtaining bulk mono-crystalline gallium-containing nitride of a general formula of AlxGa1-xN, where 0?×<1 in an environment of supercritical ammonia-containing solution has been now proposed. According to the invention growth rate and quality of the product obtained can be controlled by suitable selection of mineralizer, so as to ensure presence of ions of Group I element (IUPAC 1989), preferably sodium in combination with other components selected from the group consisting of Group I elements (IUPAC 1989), ions of Group II elements (IUPAC 1989), one or more substances containing oxygen-free species causing some weakening of the ammono-basic nature of the supereritical solvent, optionally in combination with Group II elements (JUPAC 1989), preferably calcium or magnesium.Type: GrantFiled: December 11, 2003Date of Patent: January 1, 2008Assignees: Ammono Sp. Z.O.O., Nichia CorporationInventors: Robert Dwilinski, Roman Doradzinski, Jerzy Garczynski, Leszek Sierzputowski, Yasuo Kanbara