Abstract: An organic light-emitting diode (OLED) display panel and a method of manufacturing the same are disclosed. The OLED display panel includes a base substrate and a plurality of film layers sequentially deposited on a side of the base substrate in a stacked arrangement in a first direction. The plurality of film layers includes a first planarization layer configured to initially planarize an array substrate, and a second planarization layer configured to further planarize the array substrate. The first planarization layer and the second planarization layer are made of different materials.

Abstract: An organic light emitting diode display panel in this disclosure comprises a base substrate, an array layer disposed on the base substrate, and a planarization layer disposed on the array layer. The OLED display panel further comprises anodes disposed on the planarization layer, and a pixel definition layer located between the anodes adjacent to each other. A luminescent layer, a cathode, and an encapsulation layer are provided on the anodes. A preparation material of the pixel definition layer is a light-shading material. By the pixel definition layer made of a light-shading material, the light shading effect of the OLED display panel is greatly enhanced, and the influence of the lateral light leakage of the OLED display panel on the TFT device is prevented.

Abstract: A display panel, a method of manufacturing the same, and a display device are disclosed. Each of a first metal layer and a third metal layer of the display panel is formed by patterning a composite metal layer. A photolithography process is performed on the composite metal layer to form a first plate of a storage capacitor in a light-emitting area. A second plate of the storage capacitor is formed in the light-emitting area at the same time as a transparent oxide semiconductor layer is processed. Each of the first plate and the second plate is a transparent conductive film, so that a problem of low aperture ratios with current bottom-emission type active-matrix organic light-emitting diode (AMOLED) devices can be alleviated.

Abstract: Provided are a display panel and a method for preparing same and a display device. The preparation method includes: forming a step-shaped opening on a pixel define film using a patterning process; forming an organic photoresist in the opening; performing fluorinated plasma treatment on the pixel define film outside the opening such that the pixel define film outside the opening forms a first pixel define layer having a hydrophilic surface layer, and the remaining pixel define film forms a hydrophobic second pixel define layer; and removing the organic photoresist in the opening.

Abstract: An organic light-emitting diode (OLED) display panel and a method of manufacturing the same are disclosed. The OLED display panel includes a base substrate and a plurality of film layers sequentially deposited on a side of the base substrate in a stacked arrangement in a first direction. The plurality of film layers includes a first planarization layer configured to initially planarize an array substrate, and a second planarization layer configured to further planarize the array substrate. The first planarization layer and the second planarization layer are made of different materials.

Abstract: An organic light emitting diode display panel in this disclosure comprises a base substrate, an array layer disposed on the base substrate, and a planarization layer disposed on the array layer. The OLED display panel further comprises anodes disposed on the planarization layer, and a pixel definition layer located between the anodes adjacent to each other. A luminescent layer, a cathode, and an encapsulation layer are provided on the anodes. A preparation material of the pixel definition layer is a light-shading material. By the pixel definition layer made of a light-shading material, the light shading effect of the OLED display panel is greatly enhanced, and the influence of the lateral light leakage of the OLED display panel on the TFT device is prevented.

Abstract: The embodiments of the present disclosure provide a manufacturing method of a display panel and the display panel. The display panel includes a display area and a non-display area. When forming electrode layers of the display panel, a halftone mask process is performed on respective electrode layers, and a heat treatment is performed on the electrode layers in the non-display area to crystallize the electrode layers. Therefore, adhesion effect between the electrode layers and a substrate are enhanced and improved. The manufacturing method of the embodiments of the present disclosure is simpler and more effective, and the adhesion effect between electrode layers and the substrate is better.

Abstract: The present invention relates to an array substrate, a fabricating method thereof, and a display device. On the one hand, the present invention provides a third metal layer including a second scanning signal line on the pixel electrode through a halftone mask process, thereby reducing the number of masks, thus saving production costs; on the other hand, the present invention avoids a buffer layer to be provided when the second scanning signal line is disposed under the gate, thereby further saving production costs.

Abstract: An OLED display device including an OLED pixel driving circuit is provided. A driving thin film transistor in the OLED pixel driving circuit is configured as a double gate oxide thin film transistor, and a switch thin film transistor is configured as a top gate self-aligned oxide thin film transistor. A manufacturing method of a TFT array substrate is also provided, and the TFT array substrate is used for preparing the OLED display device.

Abstract: An OLED display device including an OLED pixel driving circuit is provided. A driving thin film transistor in the OLED pixel driving circuit is configured as a double gate oxide thin film transistor, and a switch thin film transistor is configured as a top gate self-aligned oxide thin film transistor. A manufacturing method of a TFT array substrate is also provided, and the TFT array substrate is used for preparing the OLED display device.

Abstract: A thin film transistor substrate and a preparation method thereof are provided. The thin film transistor substrate includes a substrate layer, a light shielding layer, a buffer layer, an active layer, a gate insulating layer, a gate layer, an interlayer dielectric layer, a source/drain layer, a passivation layer, and a pixel electrode layer, which are sequentially disposed, wherein the light shielding layer is formed by a nano core-shell structure, and the nano core-shell structure includes a nano core and a shell.