Abstract: Embodiments described herein provide an electrostatic carrier for transferring a substrate. The electrostatic carrier may have a transparent body. The transparent body may have a first surface sized to transport the substrate into and out of a processing chamber. The electrostatic carrier may also have one or more electrostatic chucking electrodes coupled to the transparent body. The one or more electrostatic chucking electrodes may include a transparent conductive oxide material. In certain embodiments the transparent conductive oxide material is an indium-tin oxide material.

Abstract: Processing methods comprising oxidizing a metal nitride film to form a metal oxynitride layer and etching the metal oxynitride layer with a metal halide etchant. The metal halide etchant can be, for example, WCl5, WOCl4 or TaCl5. Methods of filling a trench with a seam-free gapfill are also described. A metal nitride film is deposited in the trench to form a seam and pinch-off an opening of the trench. The pinched-off opening is subjected to a directional oxidizing plasma and a metal halide etchant to open the pinched-off top and allow access to the seam.

Abstract: Embodiments described herein provide an electrostatic carrier for transferring a substrate. The electrostatic carrier may have a transparent body. The transparent body may have a first surface sized to transport the substrate into and out of a processing chamber. The electrostatic carrier may also have one or more electrostatic chucking electrodes coupled to the transparent body. The one or more electrostatic chucking electrodes may include a transparent conductive oxide material. In certain embodiments the transparent conductive oxide material is an indium-tin oxide material.

Abstract: A method of patterning and an article having a patterned structure defined therein are provided. The method comprises the steps of providing a substrate having a patterned conductive metal film disposed thereon. The patterned conductive metal film has at least one raised feature. The patterned conductive metal film defines at least one recess therein that is adjacent to the at least one raised feature. A surface of the substrate is exposed in the at least one recess. The pattern is modified through electrolysis in an electrodeposition setup including an electrolyte and two electrodes. The patterned conductive metal film is one of the electrodes during electrolysis. The method is ideal for shrinking initial patterns having features that are on the magnitude of microscale dimensions to obtain a final pattern having features that are on the magnitude of nanoscale dimensions.