Abstract: A process for manufacturing a bifacial photovoltaic cell, comprising the steps: coating a substrate with a boron containing layer; forming a cap layer over the boron containing layer which is on the second surface of the substrate; removing the boron containing layer from the surfaces of the substrate which are not covered with a cap layer; effecting the deposition of a phosphorous containing layer on the surfaces of the substrate which are not covered by the cap layer, and effecting diffusion of the phosphorous and the boron into the substrate; removing the phosphorous containing layer; texturing the substrate where there is no cap layer; effecting the deposition of a phosphorous containing layer on the first surface of the substrate and effecting diffusion of phosphorous into the substrate to form a second n-doped layer; and forming a passivating and/or antireflective coating layer covering the n-doped layer on the substrate's first surface.

Abstract: The invention provides a bifacial photovoltaic cell comprising: a semiconductor substrate, the substrate comprising an n+ layer on a first surface, and a p+ layer on a second surface. The n+ layer comprises an n-dopant and the p+ layer comprises a p-dopant. The cell further comprises a passivating and/or antireflective coating on the doped first and second surfaces. The cell is characterized in that the second surface of the semiconductor substrate has an area substantially devoid of the p-dopant on an edge of the second surface having a width in the range of 0.1-0.5 mm; wherein the area is formed by etching the semiconductor substrate.

Abstract: A method of producing a bifacial photovoltaic cell is disclosed herein, the method comprising: forming a boron-containing layer on a second surface of a semiconductor substrate; forming a cap layer above the boron-containing layer; effecting simultaneously: i) deposition on the first surface and ii) diffusion into it of the phosphorous using POCl3 gas phase process and iii) diffusion of the boron into the second surface of the substrate, to thereby dope the first surface with n-dopant and the second surface with boron.

Abstract: The invention provides a bifacial photovoltaic cell comprising: a semiconductor substrate, the substrate comprising an n+ layer on a first surface, and a p+ layer on a second surface. The n+ layer comprises an n-dopant and the p+ layer comprises a p-dopant. The cell further comprises a passivating and/or antireflective coating on the doped first and second surfaces. The cell is characterized in that the second surface of the semiconductor substrate has an area substantially devoid of the p-dopant on an edge of the second surface having a width in the range of 0.1-0.5 mm; wherein the area is formed by etching the semiconductor substrate.

Abstract: A method of producing a bifacial photovoltaic cell is disclosed herein, the method comprising: a) forming an n-dopant-containing layer on a first surface of a semiconductor substrate; b) forming a boron-containing layer on a second surface of the substrate by sputtering boron and/or by boron ion implantation; and c) effecting diffusion of the n-dopant and boron into the substrate, to dope the first surface with the n-dopant and the second surface with the boron. Further disclosed herein are bifacial photovoltaic cells, as well as photovoltaic modules, power plants and electric devices comprising said photovoltaic cells, comprising a semiconductor substrate, an n+ layer on a first surface thereof and a boron-containing p+ layer on a second surface thereof, wherein a variability of boron concentration in the p+ layer is no more than 5%.

Abstract: A method of producing a bifacial photovoltaic cell is disclosed herein, the method comprising: forming a boron-containing layer on a second surface of a semiconductor substrate; forming a cap layer above the boron-containing layer; effecting simultaneously: i) deposition on the first surface and ii) diffusion into it of the phosphorous using POCl3 gas phase process and iii) diffusion of the boron into the second surface of the substrate, to thereby dope the first surface with n-dopant and the second surface with boron.

Abstract: A method of producing a bifacial photovoltaic cell is disclosed herein, the method comprising: a) forming an n-dopant-containing layer on a first surface of a semiconductor substrate; b) forming a boron-containing layer on a second surface of the substrate by sputtering boron and/or by boron ion implantation; and c) effecting diffusion of the n-dopant and boron into the substrate, to dope the first surface with the n-dopant and the second surface with the boron. Further disclosed herein are bifacial photovoltaic cells, as well as photovoltaic modules, power plants and electric devices comprising said photovoltaic cells, comprising a semiconductor substrate, an n+ layer on a first surface thereof and a boron-containing p+ layer on a second surface thereof, wherein a variability of boron concentration in the p+ layer is no more than 5%.

Abstract: Novel methods of producing photovoltaic cells are provided herein, as well as photovoltaic cells produced thereby, and uses thereof. In some embodiments, a method as described herein comprises doping a substrate so as to form a p+ layer on one side and an n+ layer on an another side, applying an antireflective coating on the p+ layer, removing at least a portion of the n+ layer, and then forming a second n+ layer, such that a concentration of the n-dopant in the second n+ layer is variable throughout a surface of the substrate.

Abstract: Novel methods of producing photovoltaic cells are provided herein, as well as photovoltaic cells produced thereby, and uses thereof. In some embodiments, a method as described herein comprises doping a substrate so as to form a p+ layer on one side and an n+ layer on an another side, applying an antireflective coating on the p+ layer, removing at least a portion of the n+ layer, and then forming a second n+ layer, such that a concentration of the n-dopant in the second n+ layer is variable throughout a surface of the substrate.