Patents by Inventor Levi Torrison

Levi Torrison has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Superhard dielectric compounds and methods of preparation
    Publication number: 20090324475
    Abstract: Novel superhard dielectric compounds useful as gate dielectrics in microelectronic devices have been discovered. Low temperature methods for making thin films of the compounds on substrate silicon are provided. The methods comprise the step of contacting a precursor having the formula H3X—O—XH3, wherein X is silicon or carbon with a compound comprising boron or nitrogen In a chemical vapor deposition (CVD) chamber or with one or more atomic elements in a molecular beam epitaxial deposition (MBE) chamber. These thin film constructs are useful as components of microelectronic devices, and specifically as gate dielectrics in CMOS devices.
    Type: Application
    Filed: January 2, 2008
    Publication date: December 31, 2009
    Inventors: John Kouvetakis, I.S.T. Tsong, Levi Torrison, John Tolle
  • Superhard dielectric compounds and methods of preparation
    Patent number: 7374738
    Abstract: Novel superhard dielectric compounds useful as gate dielectrics discovered. Low temperature methods for making thin films of the compounds on substrate silicon are provided. The methods comprise the step of contacting a precursor having the formula H3X—O—XH3, wherein X is silicon or carbon with a compound comprising boron or nitrogen in a chemical vapor deposition (CVD) chamber or with one or more atomic elements in a molecular beam epitaxial deposition (MBE) chamber. These thin film constructs are useful as components of microelectronic devices, and specifically as gate dielectrics in CMOS devices.
    Type: Grant
    Filed: October 10, 2002
    Date of Patent: May 20, 2008
    Assignee: Arizona Board of Regents, acting for and on behalf of, Arizona State University
    Inventors: John Kouvetakis, Ignatius S. Tsong, Levi Torrison, John Tolle
  • Superhard dielectric compounds and methods of preparation
    Publication number: 20040191151
    Abstract: Novel superhard dielectric compounds useful as gate dielectrics discovered. Low temperature methods for making thin films of the compounds on substrate silicon are provided. The methods comprise the step of contacting a precursor having the formula H3X—O—XH3, wherein X is silicon or carbon with a compound comprising boron or nitrogen in a chemical vapor deposition (CVD) chamber or with one or more atomic elements in a molecular beam epitaxial deposition (MBE) chamber. These thin film constructs are useful as components of microelectronic devices, and specifically as gate dielectrics in CMOS devices.
    Type: Application
    Filed: April 8, 2004
    Publication date: September 30, 2004
    Inventors: John Kouvetakis, I S T Tsong, Levi Torrison, John Tolle