Patents by Inventor Lewis E. Katz

Lewis E. Katz has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Sequentially annealed oxidation of silicon to fill trenches with silicon dioxide
    Patent number: 4278705
    Abstract: A process for making dielectrically isolated silicon integrated circuits which use silicon oxide filled trenches to provide isolation is described. To minimize damage to the silicon, the trenches are filled by sequentially annealed oxidation process which involves alternately growing some oxide and then annealing to relieve stresses before growing more oxide.
    Type: Grant
    Filed: November 8, 1979
    Date of Patent: July 14, 1981
    Assignee: Bell Telephone Laboratories, Incorporated
    Inventors: Jorge Agraz-Guerena, Lewis E. Katz, Bernard L. Morris
  • Method and apparatus for avoiding undesirable deposits in crystal growing operations
    Patent number: 4141779
    Abstract: In Czochralski crystal growing operations, particularly those involving growth of silicon crystals, projecting formations of silicon monoxide sometimes form on the surface of the melt-containing crucible just above the initial level of the melt. These formations are avoided by perturbing chemical formation conditions at the region of probable formation. Such perturbations may be provided by a tube through which either a positive pressure of a gas, such as argon, is directed toward the region of probable formation or through which a negative pressure may be applied to perturb the formation conditions.
    Type: Grant
    Filed: May 12, 1978
    Date of Patent: February 27, 1979
    Assignees: Western Electric Company, Inc., Bell Telephone Laboratories, Incorporated
    Inventors: David W. Hill, Lewis E. Katz, Robert J. Lavigna, Raymond E. Reusser