Abstract: A silicon-based monolithic microwave integrated circuit architecture is described. This architecture, called MICROX.TM., is a combination of silicon material growth and wafer processing technologies. A wafer is fabricated using a substrate of high resistivity silicon material. An insulating layer is formed in the wafer below the surface area of active silicon, preferably using the SIMOX process. A monolithic circuit is fabricated on the wafer. A ground plane electrode is formed on the back of the wafer. Direct current and rf capacitive losses under microstrip interconnections and transistor source and drain electrodes are thereby minimized. Reduction in the resistivity of the substrate material as a result of CMOS processing can be minimized by maintaining a shielding layer over the bottom surface of the wafer. Microstrip and airbridge connectors, salicide processing and nitride side wall spacing can be used to further enhance device performance.

Abstract: An hermetically sealed package for a light-triggered thyristor. The thyristor is mounted within the cavity of an insulating body. Cathode and anode pole pieces are mounted on opposite sides of and electrically coupled with the thyristor. Annular flanges are provided to form hermetical seals between the body and pole pieces. A light pipe is mounted in a radially extending slot formed through a face of one pole piece. An inner end of the light pipe is optically coupled with a light-sensitive region of the thyristor. The outer end of the light pipe is mounted within a metal sleeve which radially projects through an opening formed in a side of the body. An hermetical seal is formed between the light pipe and inner end of the sleeve by means of a glass frit in one embodiment, or by means of solder bonded between the sleeve and a metallized region formed about the light pipe in another embodiment.