Abstract: The invention describes a flexible lighting strip comprising a multitude of light-emitting diodes arranged in at least two groups. Each group comprises at least two light-emitting diodes arranged in an electrical series connection. The at least two groups are arranged in parallel to an anode track and a cathode track. The at least two groups are arranged in a longitudinal arrangement such that a last light-emitting diode of a first group is arranged next to a first light-emitting diode of a second group. The anode track and the cathode track each consist of a wire line having substantially circular wires that are bent to receive compressive and/or tensile stress. The electrical circuit provides a third wire line having a substantially circular wire as a center line arranged between the outer lines. At least one light-emitting diode of every group is mounted on an interposer which contracts all three wire lines.

Abstract: A light-emitting device is disclosed, including: a substrate; a light-emitting diode (LED) formed on a first surface of the substrate, the LED being arranged to emit primary light; a fence disposed on a second surface of the substrate, the fence including a plurality of walls arranged to define a cell; a light-converting structure disposed in the cell, the light-converting structure being arranged to convert at least a portion of the primary light to secondary light having a wavelength that is different from the wavelength of the primary light; and a reflective element formed on one or more outer surfaces of the walls of the fence, such that the reflective element and the light-converting structure are disposed on opposite sides of the walls of the fence.

Abstract: A semiconductor light emitting device (100;200;300;400,400B,400C;500;600;700) may have a reflective side coating (120;220;320;420;520;620;720) disposed on a sidewall (118;215;315;415,435;515) of a semiconductor light emitting device structure. Such a device may be fabricated by dicing a semiconductor structure to separate a semiconductor light emitting device structure and then forming a reflective side coating (120;220;320;420;520;620;720) on a sidewall (118;215;315;415,435;515) of the separated semiconductor light emitting device structure.

Abstract: A light emitting diode module comprising: at least one light emitting diode structure, an integrated reflector arrangement that comprises a reflector surface for reflecting light from a light emitting area of the light emitting diode structure. The integrated reflector arrangement further comprises a back reflection surface for diffusely reflecting light emitted via a side surface of the light emitting diode structure back to the light emitting diode structure. The back reflection surface is directly attached to at least a part of the side surface such that during operation of the light emitting diode module an emission of stray light by means of the side surface is reduced. The invention finally describes a flash module, an automotive front lighting or a projection light emitting diode system comprising at least one light emitting diode module.

Abstract: A light-emitting device is disclosed, including: a substrate; a light-emitting diode (LED) formed on a first surface of the substrate, the LED being arranged to emit primary light; a fence disposed on a second surface of the substrate, the fence including a plurality of walls arranged to define a cell; a light-converting structure disposed in the cell, the light-converting structure being arranged to convert at least a portion of the primary light to secondary light having a wavelength that is different from the wavelength of the primary light; and a reflective element formed on one or more outer surfaces of the walls of the fence, such that the reflective element and the light-converting structure are disposed on opposite sides of the walls of the fence.

Abstract: A light-emitting device is disclosed, including: a substrate; a light-emitting diode (LED) formed on a first surface of the substrate, the LED being arranged to emit primary light; a fence disposed on a second surface of the substrate, the fence including a plurality of walls arranged to define a cell; a light-converting structure disposed in the cell, the light-converting structure being arranged to convert at least a portion of the primary light to secondary light having a wavelength that is different from the wavelength of the primary light; and a reflective element formed on one or more outer surfaces of the walls of the fence, such that the reflective element and the light-converting structure are disposed on opposite sides of the walls of the fence.

Abstract: The invention describes a flexible lighting strip comprising a multitude of light-emitting diodes arranged in at least two groups. Each group comprises at least two light-emitting diodes arranged in an electrical series connection. The at least two groups are arranged in parallel to an anode track and a cathode track. The at least two groups are arranged in a longitudinal arrangement such that a last light-emitting diode of a first group is arranged next to a first light-emitting diode of a second group. The anode track and the cathode track each consist of a wire line having substantially circular wires that are bent to receive compressive and/or tensile stress. The electrical circuit provides a third wire line having a substantially circular wire as a center line arranged between the outer lines. At least one light-emitting diode of every group is mounted on an interposer which contracts all three wire lines.

Abstract: A light emitting diode module comprising: at least one light emitting diode structure, an integrated reflector arrangement that comprises a reflector surface for reflecting light from a light emitting area of the light emitting diode structure. The integrated reflector arrangement further comprises a back reflection surface for diffusely reflecting light emitted via a side surface of the light emitting diode structure back to the light emitting diode structure. The back reflection surface is directly attached to at least a part of the side surface such that during operation of the light emitting diode module an emission of stray light by means of the side surface is reduced. The invention further describes a corresponding method of manufacturing such a light emitting diode module. The invention finally describes a flash module, an automotive front lighting or a projection light emitting diode system comprising at least one light emitting diode module.

Abstract: A light-emitting device is disclosed, including: a substrate; a light-emitting diode (LED) formed on a first surface of the substrate, the LED being arranged to emit primary light; a fence disposed on a second surface of the substrate, the fence including a plurality of walls arranged to define a cell; a light-converting structure disposed in the cell, the light-converting structure being arranged to convert at least a portion of the primary light to secondary light having a wavelength that is different from the wavelength of the primary light; and a reflective element formed on one or more outer surfaces of the walls of the fence, such that the reflective element and the light-converting structure are disposed on opposite sides of the walls of the fence.

Abstract: A semiconductor light emitting device (100;200;300;400,400B,400C;500;600;700) may have a reflective side coating (120;220;320;420;520;620;720) disposed on a sidewall (118;215;315;415,435;515) of a semiconductor light emitting device structure. Such a device may be fabricated by dicing a semiconductor structure to separate a semiconductor light emitting device structure and then forming a reflective side coating (120;220;320;420;520;620;720) on a sidewall (118;215;315;415,435;515) of the separated semiconductor light emitting device structure.

Abstract: Conduit structures for guiding extremely high frequency (EHF) signals are disclosed herein. The conduit structures can include EHF containment channels that define EHF signal pathways through which EHF signal energy is directed. The conduit structures can minimize or eliminate crosstalk among adjacent paths within a device and across devices.

Abstract: Conduit structures for guiding extremely high frequency (EHF) signals are disclosed herein. The conduit structures can include EHF containment channels that define EHF signal pathways through which EHF signal energy is directed. The conduit structures can minimize or eliminate crosstalk among adjacent paths within a device and across devices.

Abstract: Printed circuit boards including voltage switchable dielectric materials (VSDM) are disclosed. The VSDMs are used to protect electronic components, arranged on or embedded in printed circuit boards, against electric discharges, such as electrostatic discharges or electric overstresses. During an overvoltage event, a VSDM layer shunts excess currents to ground, thereby preventing electronic components from destruction or damage.

Abstract: Various disclosed aspects provide for protecting components (e.g., integrated circuits) from spurious electrical overvoltage events, such as electrostatic discharge. Embedded components with voltage switchable dielectric materials may protect circuits against electrostatic discharge.

Abstract: A composition of voltage switchable dielectric (VSD) material that comprises a concentration of core shelled particles that individually comprise a conductor core and a shell, the shell of each core shelled particle being (i) multilayered, and/or (ii) heterogeneous.

Abstract: A composition of voltage switchable dielectric (VSD) material that comprises a concentration of core shelled particles that individually comprise a conductor core and a conductor shell, so as to form a conductor-on-conductor core shell particle constituent for the VSD material.

Abstract: A method comprises providing a voltage switchable dielectric material having a characteristic voltage, exposing the voltage switchable dielectric material to a source of ions associated with an electrically conductive material, and creating a voltage difference between the source and the voltage switchable dielectric material that is greater than the characteristic voltage. Electrical current is allowed to flow from the voltage switchable dielectric material, and the electrically conductive material is deposited on the voltage switchable dielectric material. A body comprises a voltage switchable dielectric material and a conductive material deposited on the voltage switchable dielectric material using an electrochemical process. In some cases, the conductive material is deposited using electroplating.

Abstract: A method for designing a printed circuit board to meet a specification is described. A first voltage switchable dielectric material is placed in apposition with a first copper foil. A second voltage switchable dielectric material is placed in apposition with a second copper foil. An arcuate portion of the first copper foil is placed in apposition with a first side of an aluminum member, an adhesive substance being situated between the first copper foil and the first side of the aluminum member. An arcuate portion of the second copper foil in is placed apposition with a second side of the aluminum member, an adhesive substance being situated between the second copper foil and the second side of the aluminum member.

Abstract: An electrical device that includes a first electrode and a second electrode that are separated from one another so as to form a gap structure. A layer of protective material spans the gap structure to contact the first electrode and the second electrode. A dimension of the gap structure, corresponding to a separation distance between the first electrode and the second electrode, is varied and includes a minimum separation distance that coincides with a critical path of the layer of protective material between the first electrode and the second electrode.

Abstract: A substrate device includes an embedded layer of VSD material that overlays a conductive element or layer to provide a ground. An electrode, connected to circuit elements that are to be protected, extends into the thickness of the substrate to make contact with the VSD layer. When the circuit elements are operated under normal voltages, the VSD layer is dielectric and not connected to ground. When a transient electrical event occurs on the circuit elements, the VSD layer switches instantly to a conductive state, so that the first electrode is connected to ground.