Abstract: A solid state light emitting semiconductor device including a substrate, a mesa epitaxy stacking structure, an insulating layer, a first type electrode and a second type electrode is provided. The mesa epitaxy stacking structure includes a first type semiconductor layer, an active layer and a second type semiconductor layer arranged in order. A concave area is formed in the middle of the mesa epitaxy stacking structure to expose a portion of the first type semiconductor layer. The insulating layer covers the exposed surface of the first type semiconductor layer around the mesa epitaxy structure, sidewalls of the mesa epitaxy stacking structure and a portion of surface of the second type semiconductor layer. The first type electrode is located on the exposed first type semiconductor layer in the concave area, and is surrounded by the second type electrode located on the insulating layer around the mesa epitaxy stacking structure.