Patents by Inventor Lhing Gem SHOUTE

Lhing Gem SHOUTE has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20250022961
    Abstract: An active via is taught which comprises at least one via and at least one transistor which acts as a switch element. The resulting active via can be used with 1D, 2.5D or 3D chips to: control circuit elements; reduce EMI between vias; increase the density of vias; improve power and thermal efficiencies of chips; simplify power, data and other routing networks on chips; enable a higher level stacking of dies or layers in a chip while maintaining modularity; etc. A control strategy system can be provided to remove the supply of power to one or more regions of the chip when the regions are not in use and to supply power to those regions when the regions are in use, or to control input and output to regions of the chip. The active vias can be fabricated with Back or Front End Of Line processes.
    Type: Application
    Filed: September 30, 2024
    Publication date: January 16, 2025
    Inventors: Douglas W. BARLAGE, Lhing Gem SHOUTE
  • Patent number: 12148838
    Abstract: An active via is taught which comprises at least one via and at least one transistor which acts as a switch element. The resulting active via can be used with 1D, 2.5D or 3D chips to: control circuit elements; reduce EMI between vias; increase the density of vias; improve power and thermal efficiencies of chips; simplify power, data and other routing networks on chips; enable a higher level stacking of dies or layers in a chip while maintaining modularity; etc. A control strategy system can be provided to remove the supply of power to one or more regions of the chip when the regions are not in use and to supply power to those regions when the regions are in use, or to control input and output to regions of the chip. The active vias can be fabricated with Back or Front End Of Line processes.
    Type: Grant
    Filed: January 3, 2024
    Date of Patent: November 19, 2024
    Assignee: ZINITE CORPORATION
    Inventors: Douglas W. Barlage, Lhing Gem Shoute
  • Publication number: 20240332426
    Abstract: Novel semiconductor devices are taught. The novel devices include a thin film transistor (TFT) with an n-type semiconductor layer to form a channel between a source and a drain. The TFT further includes a source-channel interfacial member adjacent to at least the source contact of the device to provide depletion layer control of the operation of the TFT.
    Type: Application
    Filed: July 8, 2022
    Publication date: October 3, 2024
    Inventors: Douglas W. BARLAGE, Lhing Gem SHOUTE, Kenneth C. CADIEN, Alex Munnlick MA, Eric Wilson MILBURN
  • Publication number: 20240136330
    Abstract: An active via is taught which comprises at least one via and at least one transistor which acts as a switch element. The resulting active via can be used with 1D, 2.5D or 3D chips to: control circuit elements; reduce EMI between vias; increase the density of vias; improve power and thermal efficiencies of chips; simplify power, data and other routing networks on chips; enable a higher level stacking of dies or layers in a chip while maintaining modularity; etc. A control strategy system can be provided to remove the supply of power to one or more regions of the chip when the regions are not in use and to supply power to those regions when the regions are in use, or to control input and output to regions of the chip. The active vias can be fabricated with Back or Front End Of Line processes.
    Type: Application
    Filed: January 3, 2024
    Publication date: April 25, 2024
    Inventors: Douglas W. BARLAGE, Lhing Gem SHOUTE
  • Patent number: 11949019
    Abstract: Novel semiconductor devices are taught. The novel devices include a thin film transistor (TFT) with an n-type semiconductor layer to form a channel between a source and a drain. The TFT further includes a source-channel interfacial member adjacent to at least the source contact of the device to provide depletion layer control of the operation of the TFT.
    Type: Grant
    Filed: October 26, 2023
    Date of Patent: April 2, 2024
    Assignee: ZINITE CORPORATION
    Inventors: Douglas W. Barlage, Lhing Gem Shoute, Kenneth C. Cadien, Alex Munnlick Ma, Eric Wilson Milburn
  • Publication number: 20240055529
    Abstract: Novel semiconductor devices are taught. The novel devices include a thin film transistor (TFT) with an n-type semiconductor layer to form a channel between a source and a drain. The TFT further includes a source-channel interfacial member adjacent to at least the source contact of the device to provide depletion layer control of the operation of the TFT.
    Type: Application
    Filed: October 26, 2023
    Publication date: February 15, 2024
    Inventors: Douglas W. BARLAGE, Lhing Gem SHOUTE, Kenneth C. CADIEN, Alex Munnlick MA, Eric Wilson MILBURN