Abstract: A cell and tissue sheet forming package includes a container body, a membrane, a sliding door plate and a sealing film. The sliding door plate is disposed slidably on a top of the container body to cover or expose the membrane. The sliding door plate has a hole and a passive magnetic assembly. The cell injection equipment includes a carrier, an injection mechanism and a drive mechanism. The carrier carries the package, and the drive mechanism moves the carrier and the injection mechanism to have the injection mechanism to inject a solution, through the hole, into the package. A heating element of the carrier is introduced to heat the membrane and the solution to transform the solution into a colloid sheet on the membrane. Then, the positive magnetic assembly engages magnetically the passive magnetic assembly to slide the sliding door plate to expose the colloid sheet on the membrane.

Abstract: Aspects disclosed herein include a method for deoxidization of a metal material comprising one or more metal oxide materials, the method comprising: reducing a concentration of the one or more metal oxide materials in the metal material from an initial concentration to a final concentration, thereby forming a deoxidized metal material; wherein the step of reducing comprises: etching the metal material using a reactive gas to expose one or more metal oxide materials; and separating the exposed one or more metal oxide materials from the etched metal material; wherein the step of separating comprises: processing the etched metal material in a solvent and extracting the exposed one or more metal oxide materials.

Abstract: Among other things, the present invention is related to devices and methods of performing biological and chemical assays, such as but not limited to immunoassays and nucleic assay acid, particularly the homogeneous assay that does not use the step of wash and that is fast (e.g. 60 seconds from dropping a sample to displaying results).

Abstract: An eye-diagram index analytic method includes: calculating a transfer function of multiple coupled lines; converting the transfer function into a pulse response; calculating an eye-diagram index according to the pulse response; and correcting the eye-diagram index according to peak distortion analysis.

Abstract: This application describes method and apparatus for HDR+ using M×N-cell sensors. An example apparatus includes a plurality of pixel groups, each pixel group having M×N pixels configured with color filters of a same color such that the M×N pixels in each pixel group capture a same color. M and N are integers greater than one, and each pixel is represented by a first number of bits. The example apparatus further include one or more processors configured to: capture, through the plurality of pixel groups, a plurality of frames of a scene using a short-exposure setting; merge the plurality of frames into an HDR image; and perform tone mapping on the HDR image to reduce a dynamic range of the super-pixels of the HDR image into a low dynamic range (LDR) image, wherein each pixel in the LDR image is represented with the first number of bits.

Abstract: Embodiments of the present disclosure generally relate to a system used in a semiconductor device manufacturing process. More specifically, embodiments provided herein generally include apparatus and methods for synchronizing and controlling the delivery of an RF bias signal and a pulsed voltage waveform to one or more electrodes within a plasma processing chamber. The apparatus and methods disclosed herein can be useful to at least minimize or eliminate a microloading effect created while processing small dimension features that have differing densities across various regions of a substrate. The plasma processing methods and apparatus described herein are configured to improve the control of various characteristics of the generated plasma and control an ion energy distribution (IED) of the plasma generated ions that interact with a surface of a substrate during plasma processing.

Abstract: Embodiments of present invention provide a semiconductor structure. The structure includes an active device region and a passive device region, the active device region and the passive device region being separated by a single diffusion break, where the passive device region includes a first passive device. The first passive device includes a first diffusion region and a second diffusion region, the first and the second diffusion region being vertically connected by a lightly doped region, where the first diffusion region is connected to a backside power distribution network through a first direct backside contact (BSCA) and the second diffusion region is connected to a back-end-of-line (BEOL) structure through a first middle-of-line contact. A method of forming the same is also provided.

Abstract: Uplink transmission performed by a UE is provided. The UE receives configured grant (CG) configurations for allocating a group of Physical Uplink Shared Channel (PUSCH) durations in a bandwidth part (BWP), each configured grant configuration having a priority level corresponding to the allocated PUSCH duration, wherein at least two of the PUSCH durations in the group overlap in a time domain; identifies a set of PUSCH durations for transmitting a medium access control (MAC) protocol data unit (PDU) generated from available data from the group of PUSCH durations; selects a PUSCH duration from the identified set of PUSCH durations as a prioritized PUSCH duration based on a comparison of the priority levels corresponding to the identified set of PUSCH durations; and transmits the MAC PDU, via the transceiver, on the prioritized PUSCH duration.

Abstract: A method includes forming a first pull-up transistor and a first pass-gate transistor over a substrate at a first level height, the first pull-up and first pass-gate transistors being of a dual port static random access memory (SRAM) cell; forming a first pull-down transistor and a second pass-gate transistor of the dual port SRAM cell over the substrate at a second level height; forming a second pull-down transistor and a third pass-gate transistor of the dual port SRAM cell over the substrate at a third level height; forming a second pull-up transistor and a fourth pass-gate transistor of the dual port SRAM cell over the substrate at a fourth level height.

Abstract: A sensor package structure includes a substrate, a sensor chip and a ring-shaped solder mask frame those are disposed on the substrate, a ring-shaped support disposed on a top side of the annular solder mask frame, and a light permeable member that is disposed on the ring-shaped support. The sensor chip is electrically coupled to the substrate. A top surface of the sensor chip has a sensing region, and the sensing region is spaced apart from an outer lateral side of the sensor chip by a distance less than 300 ?m. The ring-shaped solder mask frame surrounds and contacts the outer lateral side of the sensor chip. The light permeable member, the ring-shaped support, and the sensor chip jointly define an enclosed space.

Abstract: This application describes systems and methods for detecting depth in deep trench isolation with semiconductor devices using test key transistors. An method comprises: capturing, by an image sensor, an image; generating a plurality of chrominance channels by converting the image into luminance-chrominance space; performing homogeneous region segmentation on the plurality of chrominance channels to generate one or more regions of interest in the plurality of chrominance channels; and projecting the regions of interest onto eigen-illuminant images to determine gray color pixels on the image, wherein the eigen-illuminant images are generated via performing a machine learning algorithm on a training set of images captured by the image sensor.

Abstract: A head-mounted device may have an inner display that displays images for a user and an outer display that informs nearby people of the status of the user and inner display. For example, the outer display may display an image of a face, an abstract layer, or both, depending on whether the inner display is operating in passthrough mode, mixed reality mode, or virtual reality mode. An ambient light sensor in the head-mounted device may be used to measure the brightness and color of ambient light. The white point of the face layer on the outer display may be adapted to the color of ambient light, whereas the white point of the abstract layer on the outer display may remain fixed. The white point of a display may be a correlated color temperature setting (e.g., measured in degrees Kelvin) that determines the warmth or coolness of displayed colors.

Abstract: A wheel detachment monitoring and detection device is to be installed on a vehicle wheel. The wheel detachment monitoring and detection device includes a washer, a housing, a detachment detection module, and a power source. The washer defines a through hole for a fastening member to pass and fix the washer, and has an engaging portion partially covered by the fastening member. The housing gets engaged with the engaging portion and accommodates the detachment detection module. The detachment detection module has a pressure sensing portion that is pressed by the fastening member to press against the vehicle wheel, and detects a pressing force acting thereon. When the pressure sensing portion detects that the pressing force disappears, the detachment detection module sends out a warning signal. The wheel detachment monitoring and detection device ensures attachment of the vehicle wheel by monitoring looseness of the fastening member.

Abstract: An apparatus, semiconductor device and method of manufacture are presented, wherein a hard mask layer and one or more etch stop layers are etched in an etching chamber. In an embodiment the semiconductor device is placed on a mounting platform at a first height and an etch process is performed, then the semiconductor device is moved to a second height within the chamber and a second etch process is performed, with the rotational speed of the semiconductor device reduced during movements in order to reduce the chance of cross contamination.

Abstract: An apparatus, semiconductor device and method of manufacture are presented, wherein a hard mask layer and one or more etch stop layers are etched in an etching chamber. In an embodiment the semiconductor device is placed on a mounting platform at a first height and an etch process is performed, then the semiconductor device is moved to a second height within the chamber and a second etch process is performed, with the rotational speed of the semiconductor device reduced during movements in order to reduce the chance of cross contamination.

Abstract: An electronic device includes: a circuit board, a substrate, a first signal line, a second signal line and a first chip. The substrate has a peripheral area, a first side edge having a first extending direction and a second side edge having a second extending direction not parallel to the first extending direction. The first signal line is disposed on the substrate and in the peripheral area. The second signal line is disposed on the substrate and is adjacent to the first signal line. The chip is disposed on the circuit board and is electrically connected to the first signal line. Wherein, the first signal line has a first section disposed between the second signal line and the first side edge and a second section disposed between the second signal line and the second side edge, and the first section of the first signal line extends along the first extending direction and the second section of the first signal line extends along the second extending direction.

Abstract: An electronic device is provided. The electronic device includes a substrate and a first conductive line disposed on the substrate and including a first section and a second section electrically connected to the first section. The first section has a first minimum width outside the overlapping region, the second section has a second minimum width outside the overlapping region, and the first minimum width is different from the second minimum width. The electronic device further includes a first conductive layer disposed on the first section and the second section. The first section is electrically connected to the second section through the first conductive layer.

Abstract: An electronic device is provided, which includes: a substrate including a periphery region; a plurality of first pads disposed on the substrate and in the periphery region; a plurality of second pads disposed on the substrate and in the periphery region; and a plurality of redundancy pads disposed on the substrate and in the periphery region, wherein the plurality of first pads are configured to transmit a plurality of data signals, the plurality of second pads are configured to transmit a plurality of signals which are different from the plurality of data signals and a plurality of touch signals, and the plurality of first pads and the plurality of redundancy pads are disposed between two of the plurality of second pads.

Abstract: The present invention includes an air cleaning device and a smart power equipment; the air cleaning device includes an air intake device, an air discharge device, an air purifying device, an air extractor device, an ultraviolet light catalyst sterilizing device, and a power supply device electrically connected to the air extractor device and the ultraviolet light catalyst sterilizing device. The smart power equipment is provided with an artificial intelligence movement system, an electric storage, and a charging base that enables docking with the artificial intelligence movement system for charging the electric storage device. The smart power equipment moves and, according to the air pollution level setting, activates the air extractor device to circulate the air while carrying out air purification by means of an ultraviolet light catalyst sterilizing device.

Abstract: An electronic device includes: a substrate, a signal line, a detection line and a detection unit. The substrate has a peripheral area and a substrate edge. The signal line is disposed on the substrate, and the signal line is located in the peripheral area. The detection line is disposed on the substrate, and is adjacent to the signal line. The detection unit is electrically connected to the detection line. Wherein, the detection line is disposed between the signal line and the substrate edge, and the detection line and the signal line are electrically insulated.