Abstract: Systems and methods for generating and utilizing artificial intelligence generated badges can include processing web information associated with a subject to determine particular qualities of the subject. The qualities can then be utilized to generate one or more badges. The badges can then be utilized for search result determination and display. The badges may be utilized for search result ranking and may be utilized to annotate search results in a search results interface.

Abstract: Disclosed are an Internet of Vehicles information processing method, an apparatus, a device, and a system. The method includes: sending first target information, the first target information being used for determining the ability of a first device to execute a first service; and sending first target information, wherein the first target information is used to determine a capability of the first device to execute a first service, the first target information comprises device characteristic information and/or service capability information, and the service capability information comprises first service capability information and/or second service capability information, the first service capability information is used to indicate a currently activated service capability of the first device, and the second service capability information is used to indicate a currently inactivated service capability of the first device.

Abstract: A valve-level fault location method and system for converters based on horizontal and vertical state differences of valves are disclosed. The method includes: collecting current data of a converter; calculating a time width of each valve conduction state, an alternating current conduction width, and a direct current conduction width based on the current data; constructing horizontal and vertical timing features on a circuit structure of the converter according to the alternating current conduction width and the direct current conduction width; comparing the time width of each valve conduction state with a time width of a normal valve conduction state, and outputting each valve state signal; and implementing valve-level fault location for the converter according to the time width of each valve conduction state, the alternating current conduction width, the direct current conduction width, the horizontal and vertical timing features, each valve state signal, and the current data.

Abstract: To increase performance, a non-volatile storage apparatus reduces the amount of time needed for program verify by eliminating a pause in the raising of word line voltages that has been used to allow the channels of memory cells to discharge. To compensate for the removal of the time previously used to allow the channels of memory cells to discharge without experiencing a disturb, a source line that is in communication with the channels is lowered from a source voltage applied to support programming to a source voltage applied to support sensing (for program verify) earlier than in previous designs such that the source line reaches the source voltage applied to support sensing (for program verify) prior to applying the verify reference voltage to the selected word line for program verify.

Abstract: An ambipolar, gate all around, semiconductor-based transistor includes a substrate, a first-type channel structure located on the substrate, the first-type channel structure having a gate region, a source region, and a drain region, a second-type material located on all sides of the gate region of the first-type channel structure, but not on the source region and the drain region, a dielectric material fully surrounding the second-type material on all the external surface of the gate region, a gate electrode located on the dielectric material, a source electrode located on the source region, and a drain electrode located on the drain region. The first-type is one of p- or n-type and the second type is another of the p- or n-type.

Abstract: An MFMIS-FET includes a MOSFET having a three-dimensional structure that allows the MOSFET to have an effective area that is greater than the footprint of the MFM or the MOSFET. In some embodiment, the gate electrode of the MOSFET and the bottom electrode of the MFM are united. In some, they have equal areas. In some embodiments, the MFM and the MOSFET have nearly equal footprints. In some embodiments, the effective area of the MOSFET is much greater than the effective area of the MFM. These structures reduce the capacitance ratio between the MFM structure and the MOSFET without reducing the area of the MFM structure in a way that would decrease drain current.

Abstract: The present disclosure provides a method of transmitting and receiving data between devices via an ad-hoc wireless communication network. The ad-hoc wireless network uses a time frame having time slots, each of the time slots is assignable to one of the devices so that a device assigned to a time slot transmits and receives the data at the assigned time slot. The present disclosure also provides that the time frame is created by one of the devices.

Abstract: Disclosed are a fully human bispecific antibody against SARS-COV-2 and a use thereof. Specifically, the present disclosure also relates to a vector and host cell expressing same, and a preparation and purification method therefor. The bispecific antibody has a broad-spectrum binding ability and neutralizing ability, and the bispecific antibody can be used in the preparation of drugs for treating or preventing diseases caused by SARS-COV-2 infection and in detection or diagnosis of COVID-19.

Abstract: The disclosure provides an image segmentation model training method and an electronic device. The method includes the following steps. A plurality of labeled images of a training image are obtained, wherein each of the labeled images includes a labeled target area and a background area. A union area of the labeled target areas of the plurality of labeled images is obtained, and a complement area of the union area is obtained. A predicted segmented image of the training image is generated using an image segmentation model. A first loss value is generated according to the predicted segmented image and the complement area. A second loss value is generated according to the predicted segmented image and the labeled target area of at least one of the plurality of labeled images. The image segmentation model is trained according to the first loss value and the second loss value.

Abstract: According to an example aspect of the present invention, there is provided a method comprising: buffering a first radio link control, RLC, data unit of a radio bearer for transmission to a receiving device, starting a retransmission timer responsive to providing the first RLC data unit for transmission to the receiving device, and retransmitting the buffered first RLC data unit in response to a request for a second RLC data unit of the radio bearer before expiry of the retransmission timer, wherein the second RLC data unit is to be transmitted to the receiving device after the first RLC data unit.

Abstract: A heat dissipation structure of a lithium battery includes a battery cell and a metal housing. The battery cell includes a battery core and two electrode tabs. The metal housing includes a heat dissipation surface having a large area contacting the battery core and a frame surrounding the heat dissipation surface. A buffer space recessed toward the battery cell is formed between the frame and the heat dissipation surface. A plurality of cooling slots is disposed on the frame and communicate with the buffer space and an external environment. Therefore, the deformation space required for the expansion of the battery core is provided to keep the overall appearance of the battery cell, and the effects of uniform and rapid heat dissipation may be achieved.

Abstract: An example fused convolutional layer, comprising, a comparator capable of reception of a first zero point and a multiply-accumulation result, a first multiplexer coupled to the comparator, wherein the first multiplexer receives a plurality of power-of-two exponent values, a shift normalizer, coupled to the first multiplexer, wherein the shift normalizer is capable of receiving the multiply-accumulation result and the plurality of power-of-two exponent values, wherein the shift normalizer limits a quantization of the multiply-accumulation result to a power-of-two scale and a second multiplexer coupled to an output of the shift normalizer, the first multiplexer and receives a second zero point and outputs an activation.

Abstract: Methods, systems, and devices for low resistance staircase rivet contact using metal-to-metal strap connection are described. The described techniques provide for usage of a metallic material that adheres to a dielectric material when deposited via a chemical vapor deposition (CVD) process or atomic layer deposition (ALD) process to connect to a word line contact. For example, a strap may be formed between a layer of conductive material and a word line contact that extends at least partially through a stack of layers, and may be filled with such a metallic material. Such techniques may support a connection between the word line contact and the layer of conductive material without usage of a liner material, which may mitigate a resistance of the connection.

Abstract: A method includes: providing a photomask used in extreme ultra violet (EUV) lithography; determining a bias voltage of an electron beam writer system, the bias voltage applicable to an inspection operation and a repairing operation; and performing the repairing operation on the photomask by the electron beam writer system with the bias voltage.

Abstract: A 3D dual complementary-circuit structure includes a first forksheet structure stacked on a first side of, in a first direction, a second forksheet structure to provide two complementary circuits in a space of a single forksheet structure. A dividing wall bisects at least one semiconductor slab in the first forksheet structure into a first slab portion with a first semiconductor type and a second slab portion with a second semiconductor type and also bisects at least one semiconductor slab in the second forksheet structure into a third slab portion with a third semiconductor type and a fourth slab portion with a fourth semiconductor type. One of the second semiconductor type, the third semiconductor type, and the fourth semiconductor type may be a same semiconductor type as the first semiconductor type. Two complementary metal oxide semiconductor (CMOS) circuits may be formed in the area of a single forksheet structure.

Abstract: Disclosed is a display substrate, including a base substrate (100), a circuit structure layer disposed on the base substrate (100), and a light emitting structure layer. The circuit structure layer includes a plurality of pixel circuits located in a first display region (A1), at least one first trace 231 extending along a first direction (D1), at least one second trace 232 extending along a second direction (D2), and at least one third trace located in a peripheral region (BB). The at least one first trace (231) is electrically connected with the at least one second trace (232) and the at least one third trace is electrically connected with at least one of following; the at least one first trace (231) and the at least one second trace (232).

Abstract: Various aspects of the present disclosure generally relate to wireless communication. In some aspects, an integrated access and backhaul (IAB) node may determine a set of restricted IAB-DU beams that are not to be used by the IAB-DU while a mobile termination function of the IAB node is using one or more IAB-MT beams. The determination is based on measurements related to interference caused by simultaneous operations of the IAB-DU and IAB-MT in multiplexing modes. The IAB node transmits signaling that indicates the restricted IAB-DU beams and associates the set with the IAB-MT beams. Additionally or alternatively, an IAB node can receive such signaling from a parent node, perform operations using the IAB-MT beams, and simultaneously perform operations using certain IAB-DU beams not included in the set of restricted beams. Numerous other aspects are provided.

Abstract: A T cell product for administration to a subject and a use thereof are provided. The product includes at least one allogeneic T cell, which expresses at least one MHC molecule identified as an exogenous source by at least one T cell of the subject. The T cell product can widen the range of a donor and activate an immune response of the subject. The T cell product is used in the preparation of a drug for treating tumors.

Abstract: A household appliance contains a metal panel and a detachable control device. A button is embedded in the metal panel, the button has a non-conductive operation surface, and a primary induction coil is provided on the rear side thereof. A secondary induction coil is provided in the control device and is provided with a first magnetic conductor, which contains a first central column, a first flat plate carrying the primary induction coil and a first sidewall encircling the periphery of the primary induction coil. The secondary induction coil is provided with a second magnetic conductor, which contains a second central column located in the center of the secondary induction coil and a second flat plate carrying the secondary induction coil. A conducted magnetic flux tightly surrounds the primary and secondary induction coils, so as to avoid occurrence of eddy current heating in the metal panel and improve the charging efficiency.

Abstract: The present invention belongs to the technical field of new use of medicines, and provides use of a medicine for reducing the iron content in brain in the preparation of a drug for treating and/or preventing neuropsychiatric diseases. The present invention provides a medicine/diet for reducing the iron content, which prevents the development of substance addiction behavior after administration, to prevent and treat substance addiction or dependence. The medicine is a hypoxia-inducible factor prolyl hydroxylase inhibitor or an iron chelating agent.