Abstract: A magnetically driving apparatus includes two magnetic units and a driving unit. Each of the magnetic units includes a magnet. The N-poles or S-poles of the magnetic units are directed to each other. The driving unit is located between the magnetic units. Each of the driving units includes a magnetically permeable element movable between an active position for magnetically attracting the magnets and an idle position clear of the magnetism of the magnets to allow the magnets to magnetically repulse each other.

Abstract: A magnetic driving apparatus includes a base, at least one passive magnetic unit, and a switching unit. The at least one passive magnetic unit includes two passive magnets movable on the base and a translation-to-rotation device for interconnecting the passive magnets. The switching unit includes two active magnetic units, and a driving unit. The passive magnets are located between the active magnetic units. Each of the active magnetic units includes at least two active magnets. The amount of the active magnets of each of the active magnetic units is the amount of the at least one passive magnetic unit plus one. The driving unit reciprocates the active magnetic units between two positions relative to the at least one passive magnetic unit so that the active magnets reciprocate the passive magnets.

Abstract: A magnetic driving apparatus includes a base, two active magnetic units, a passive magnetic unit, and a pole-switching unit. Each of active magnetic units includes a rotational magnet. The passive magnetic unit includes two slidable magnets. One of the rotational magnets exerts magnetic push on one the slidable magnets while the remaining one of the magnets exerts magnetic attraction on the remaining one of the slidable magnets. The pole-switching unit includes a motor, a leading gear, two following gears, and a rack. The motor is connected to the base. The leading gear is operatively connected to the motor. Each of the following gears is connected to one of the rotational magnets. The rack is engaged with the gears so that the motor rotates the rotational magnets.

Abstract: The present invention relates to a spent fuel dry reprocessing method for directly obtaining a zirconium alloy nuclear fuel, comprising: determining components and a ratio of a molten salt composition used for melting a spent fuel according to a requirement of reactor design on a zirconium alloy fuel and contents of actinium series metals in the spent fuel; melting the spent fuel in the above molten salt composition; and selecting an electrode pair for electrodeposition so that zirconium in the molten salt composition and uranium ions in the spent fuel or uranium and other actinium series metal ions are subjected to co-deposition, thereby obtaining the zirconium alloy nuclear fuel meeting a design requirement. The spent fuel dry reprocessing method provided by the invention is suitable for oxide spent fuel and metal spent fuel, and is simple and controllable in process, low in energy consumption, low in cost and easy to industrialize.

Abstract: The present invention relates to a spent fuel dry reprocessing method for directly obtaining a zirconium alloy nuclear fuel, comprising: determining components and a ratio of a molten salt composition used for melting a spent fuel according to a requirement of reactor design on a zirconium alloy fuel and contents of actinium series metals in the spent fuel; melting the spent fuel in the above molten salt composition; and selecting an electrode pair for electrodeposition so that zirconium in the molten salt composition and uranium ions in the spent fuel or uranium and other actinium series metal ions are subjected to co-deposition, thereby obtaining the zirconium alloy nuclear fuel meeting a design requirement. The spent fuel dry reprocessing method provided by the invention is suitable for oxide spent fuel and metal spent fuel, and is simple and controllable in process, low in energy consumption, low in cost and easy to industrialize.

Abstract: A method for growing aluminum indium nitride (AlInN) films on silicon substrates comprises several steps: firstly, arranging a silicon substrate in a reaction chamber; secondly, providing multiple reaction gases in the reaction chamber, wherein the reaction gases include aluminum precursors, indium precursors and nitrogen-containing gases; finally, dynamically adjusting flow rates of the reaction gases and directly growing an AlInN layer on the silicon substrate via a crystal growth process. By directly forming an AlInN layer on the silicon substrate, lattice matching is increased, residual thermal stress is reduced and film quality is improved. In addition, fabrication process is simplified and thus cost is reduced.

Abstract: A method for growing epitaxial diamond is provided here. A metallic layer is deposited on a diamond substrate and is followed by an epitaxial diamond film deposited on top of the metallic layer. As a buffer layer, the metallic layer relieves stress accumulated in the thin film of the epitaxial diamond to prevent cracks. In consequence, diamond epitaxial layers with desired thickness and good quality can be obtained.

Abstract: A full butt joint structure of a connection joint between a side frame and a cross beam of a bogie frame, characterized in: the side frame is connected to the cross beam by a connecting seat to realize the full butt joint, a side frame connecting end of the connecting seat, a transport column and a side frame inside vertical plate form a plate-plate butt joint structure, and a cross beam connecting end of the connecting seat and the cross beam form a tube-tube butt joint structure. An assembly welding process comprises: the connecting seat is assembled and welded to the cross beam; a cross beam unit is assembled and welded; the connecting seat is assembled and welded to the transport column and the side frame inside vertical plate; a side frame strengthen partition plate is assembled and welded to an upper plate; and the bogie frame is welded.

Abstract: The present invention is directed to a method of growing thin film diamond. Since there are micro-grooves formed between internal grains of the heterogeneous substrate during lateral epitaxy growth, diamond seeds are allowed to be embedded in the micro-grooves; surface damage caused by scratching method or seeding method also can be prevented. As a result, a continuous diamond thin film with uniform thickness and high quality can be obtained.

Abstract: A method for growing aluminum indium nitride (AlInN) films on silicon substrates comprises several steps: firstly, arranging a silicon substrate in a reaction chamber; secondly, providing multiple reaction gases in the reaction chamber, wherein the reaction gases include aluminum precursors, indium precursors and nitrogen-containing gases; finally, dynamically adjusting flow rates of the reaction gases and directly growing an AlInN layer on the silicon substrate via a crystal growth process. By directly forming an AlInN layer on the silicon substrate, lattice matching is increased, residual thermal stress is reduced and film quality is improved. In addition, fabrication process is simplified and thus cost is reduced.

Abstract: The present invention relates to a method for growing a non-polar m-plane epitaxial layer on a single crystal oxide substrate, which comprises the following steps: providing a single crystal oxide with a perovskite structure; using a plane of the single crystal oxide as a substrate; and forming an m-plane epitaxial layer of wurtzite semiconductors on the plane of the single crystal oxide by a vapor deposition process, wherein the non-polar m-plane epitaxial layer may be GaN, or III-nitrides. The present invention also provides an epitaxial layer having an m-plane obtained according to the aforementioned method.

Abstract: The present invention relates to a method for growing a novel non-polar (13 40) plane epitaxy layer of wurtzite structure, which comprises the following steps: providing a single crystal oxide with perovskite structure; using a plane of the single crystal oxide as a substrate; and forming a non-polar (13 40) plane epitaxy layer of wurtzite semiconductors on the plane of the single crystal oxide by a vapor deposition process. The present invention also provides an epitaxy layer having non-polar (13 40) plane obtained according to the aforementioned method.

Abstract: The present invention is directed to a method of growing thin film diamond. Since there are micro-grooves formed between internal grains of the heterogeneous substrate during lateral epitaxy growth, diamond seeds are allowed to be embedded in the micro-grooves; surface damage caused by scratching method or seeding method also can be prevented. As a result, a continuous diamond thin film with uniform thickness and high quality can be obtained.

Abstract: A method for growing epitaxial diamond is provided here. A metallic layer is deposited on a diamond substrate and is followed by an epitaxial diamond film deposited on top of the metallic layer. As a buffer layer, the metallic layer relieves stress accumulated in the thin film of the epitaxial diamond to prevent cracks. In consequence, diamond epitaxial layers with desired thickness and good quality can be obtained.

Abstract: A method of nucleating the growth a diamond film comprises the following steps. First, a substrate is provided upon which the diamond film is to be nucleated. A diamondoid is then dissolved in an adhesive solvent to form a mixing solution. The substrate is inserted into the mixing solution to let the diamondoid attach to the substrate through the adhesive solvent. A diamond film nucleated by the abovementioned method is also disclosed in the present invention.

Abstract: The present invention relates to a method for growing a novel non-polar (13 40) plane epitaxy layer of wurtzite structure, which comprises the following steps: providing a single crystal oxide with perovskite structure; using a plane of the single crystal oxide as a substrate; and forming a non-polar (13 40) plane epitaxy layer of wurtzite semiconductors on the plane of the single crystal oxide by a vapor deposition process. The present invention also provides an epitaxy layer having non-polar (13 40) plane obtained according to the aforementioned method.

Abstract: A magnetocaloric structure includes a magnetocaloric material and at least one protective layer. The magnetocaloric material has bar type or plank type. The protective layer is disposed on the magnetocaloric material.

Abstract: Disclosed herein is a method for manufacturing a magneto caloric device. Magneto caloric powders are mixed with thermally conductive powders to form a composite material. An adhesive containing an acrylic resin is poured on the composite material and diffused among the composite material. The adhesive is cured within the composite material at a room temperature.

Abstract: A device for determining dimensions of a workpiece includes a locating apparatus, a determining apparatus and a main processor. The locating apparatus includes a locating board supporting workpieces and defining at least one detecting aperture therethrough. The determining apparatus includes a detecting module, the detecting module includes at least one laser detector, each laser detector includes a laser emitter and a laser receiver respectively mounted on two opposite sides of the locating board. The main processor is connected to the locating apparatus and the determining apparatus, the laser emitter emits laser beams traveling through the detecting aperture and received by the laser receiver, and the main processor determines the dimension of the workpiece according to the dimension of parts on the laser receiver shielded by the workpiece.

Abstract: The present invention relates to a method for growing a non-polar m-plane epitaxial layer on a single crystal oxide substrate, which comprises the following steps: providing a single crystal oxide with a perovskite structure; using a plane of the single crystal oxide as a substrate; and forming an m-plane epitaxial layer of wurtzite semiconductors on the plane of the single crystal oxide by a vapor deposition process. The present invention also provides an epitaxial layer having an m-plane obtained according to the aforementioned method.