Abstract: A semiconductor chip includes a first intellectual property block. There are a second intellectual property block and a third intellectual property block around the first intellectual property block. There is a multiple metal layer stack over the first intellectual property block, the second intellectual property block, and the third intellectual property block. An interconnect structure is situated in the upper portion of the multiple metal layer stack. The interconnect structure is configured for connecting the first intellectual property block and the second intellectual property block. In addition, at least a part of the interconnect structure extends across and over the third intellectual property block.

Abstract: The present application provides a semiconductor device and the method of making the same. The method includes recessing a fin extending from a substrate, forming a base epitaxial feature on the recessed fin, forming a bar-like epitaxial feature on the base epitaxial feature, and forming a conformal epitaxial feature on the bar-like epitaxial feature. The forming of the bar-like epitaxial feature includes in-situ doping the bar-like epitaxial feature with an n-type dopant at a first doping concentration. The forming of the conformal epitaxial feature includes in-situ doping the conformal epitaxial feature with a second doping concentration greater than the first doping concentration.

Abstract: A wavelength converting includes a diffused-reflecting layer, a substrate, a photoluminescence layer, and a binder. The diffused-reflecting layer has a first surface and a second surface facing away from each other. The substrate is over the first surface of the diffused-reflecting layer. The photoluminescence layer is over the second surface of the diffused-reflecting layer. The binder is mixed at least in the photoluminescence layer or at least in the diffused-reflecting layer, the binder includes a structural unit represented by formula (1), and a characteristic absorption band in a Fourier-Transform Infrared (FTIR) Spectrum of silicon-oxygen-silicon bonds (Si—O—Si bonds) in the binder is from 900 cm?1 to 1250 cm?1, in which R represents an aromatic group.

Abstract: A wavelength conversion device includes a wavelength conversion plate, a reflective layer, a driving component and a thermal conductive layer. The wavelength conversion plate includes a lateral edge, at least one surface and a conversion region. The reflective layer is disposed on the surface of the wavelength conversion plate. The driving component is disposed near the lateral edge of the wavelength conversion plate and configured to displace the wavelength conversion plate. The thermal conductive layer is disposed on the surface of the wavelength conversion plate and thermally connected to the conversion region for conducting heat generated by the conversion region during a wavelength conversion. By disposing the thermal conductive layer on the surface of the wavelength conversion plate, the thermal conductive layer is thermally directly connected to the conversion region, so that the heat generated at the conversion region during the wavelength conversion is efficiently dissipated.

Abstract: A wavelength conversion element includes a base plate and a rotating device. The base plate has a first surface and a second surface. The first surface is configured to allow a fluorescent layer to dispose on. The base plate includes some first grooves and some second grooves. The first grooves are disposed on the first surface around a center of the base plate. The second grooves are disposed on the second surface around the center. The first grooves and the second grooves are staggered from each other along a rotating direction. The base plate has some through holes. Each of the through holes communicates with the second surface and the corresponding first groove. The rotating device is connected with the base plate and configured to drive the base plate to rotate about an axis along the rotating direction. The axis passes through the center.

Abstract: An optical engine module includes a first light source module, a second light source module, and a controller. The first light source module includes a plurality of solid state light emitters. The solid state light emitters are configured to respectively emit different color lights. The second light source module is configured to emit fluorescent light. The controller is configured to: drive the first light source module in a first light emitting mode, in which the color lights are configured to be mixed to produce a first white light; and drive the first light source module and the second light source module in a second light emitting mode, in which the color lights and the fluorescent light are configured to be mixed to produce a second white light.

Abstract: A wavelength converting device includes a diffused-reflecting layer, a substrate, and a photoluminescence layer. The diffused-reflecting layer has a first surface and a second surface facing away from the first surface, and the diffused-reflecting layer includes a hydrophilic binder and a lipophilic binder. The substrate is on the first surface of the diffused-reflecting layer. The photoluminescence layer is on the second surface of the diffused-reflecting layer.

Abstract: A wavelength device includes a substrate, a photoluminescence layer, a light spot adjusting layer, and a reflecting layer. The photoluminescence layer is disposed over the substrate, and is configured to receive incident light and convert the incident light to excitation light. The light spot adjusting layer is disposed between the substrate and the photoluminescence layer, and is configured to receive the excitation light and the unconverted incident light and to adjust the light path of the excitation light and the unconverted incident light, in which a refractive index of the photoluminescence layer is different from a refractive index of the light spot adjusting layer. The reflecting layer is disposed between the light spot adjusting layer, and is configured to reflect the incident light and the excitation light.

Abstract: A phosphor wheel includes a substrate and a luminescence layer. The luminescence layer is disposed on the substrate and includes a glue layer, a plurality of scattering particles, and a plurality of first photoluminescence particles. The scattering particles and the first photoluminescence particles are collectively distributed in the glue layer. At least one of the scattering particles is located between the substrate and at least one of the first photoluminescence particles, and at least another of the first photoluminescence particles is located between the substrate and at least another of the scattering particles.

Abstract: A wavelength device includes a substrate, a photoluminescence layer, a light spot adjusting layer, and a reflecting layer. The photoluminescence layer is disposed over the substrate, and is configured to receive incident light and convert the incident light to excitation light. The light spot adjusting layer is disposed between the substrate and the photoluminescence layer, and is configured to receive the excitation light and the unconverted incident light and to adjust the light path of the excitation light and the unconverted incident light, in which a refractive index of the photoluminescence layer is different from a refractive index of the light spot adjusting layer. The reflecting layer is disposed between the light spot adjusting layer, and is configured to reflect the incident light and the excitation light.

Abstract: A wavelength conversion element includes a base plate and a rotating device. The base plate has a first surface and a second surface. The first surface is configured to allow a fluorescent layer to dispose on. The base plate includes some first grooves and some second grooves. The first grooves are disposed on the first surface around a center of the base plate. The second grooves are disposed on the second surface around the center. The first grooves and the second grooves are staggered from each other along a rotating direction. The base plate has some through holes. Each of the through holes communicates with the second surface and the corresponding first groove. The rotating device is connected with the base plate and configured to drive the base plate to rotate about an axis along the rotating direction. The axis passes through the center.

Abstract: A wavelength converting device includes a diffused-reflecting layer, a substrate, and a photoluminescence layer. The diffused-reflecting layer has a first surface and a second surface facing away from the first surface, and the diffused-reflecting layer includes a hydrophilic binder and a lipophilic binder. The substrate is on the first surface of the diffused-reflecting layer. The photoluminescence layer is on the second surface of the diffused-reflecting layer.

Abstract: A wavelength converting includes a diffused-reflecting layer, a substrate, a photoluminescence layer, and a binder. The diffused-reflecting layer has a first surface and a second surface facing away from each other. The substrate is over the first surface of the diffused-reflecting layer. The photoluminescence layer is over the second surface of the diffused-reflecting layer. The binder is mixed at least in the photoluminescence layer or at least in the diffused-reflecting layer, the binder includes a structural unit represented by formula (1), and a characteristic absorption band in a Fourier-Transform Infrared (FTIR) Spectrum of silicon-oxygen-silicon bonds (Si—O—Si bonds) in the binder is from 900 cm?1 to 1250 cm?1, in which R represents an aromatic group.

Abstract: A pixel structure includes a light emitting diode chip and a light blocking structure. The light emitting diode chip includes a P-type semiconductor layer, an active layer, an N-type semiconductor layer, a first electrode, and K second electrodes. The active layer is located on the P-type semiconductor layer. The N-type semiconductor layer is located on the active layer. The N-type semiconductor layer has a first top surface that is distant from the active layer. The first electrode is electrically connected to the P-type semiconductor layer. The light blocking structure is located in the light emitting diode chip and defines K sub-pixel regions. The active layer and the N-type semiconductor layer are divided into K sub-portions respectively corresponding to the K sub-pixel regions by the light blocking structure. The K sub-pixel regions share the P-type semiconductor layer.

Abstract: A wavelength conversion device includes a wavelength conversion plate, a reflective layer, a driving component and a thermal conductive layer. The wavelength conversion plate includes a lateral edge, at least one surface and a conversion region. The reflective layer is disposed on the surface of the wavelength conversion plate. The driving component is disposed near the lateral edge of the wavelength conversion plate and configured to displace the wavelength conversion plate. The thermal conductive layer is disposed on the surface of the wavelength conversion plate and thermally connected to the conversion region for conducting heat generated by the conversion region during a wavelength conversion. By disposing the thermal conductive layer on the surface of the wavelength conversion plate, the thermal conductive layer is thermally directly connected to the conversion region, so that the heat generated at the conversion region during the wavelength conversion is efficiently dissipated.

Abstract: A phosphor wheel includes a substrate and a luminescence layer. The luminescence layer is disposed on the substrate and includes a glue layer, a plurality of scattering particles, and a plurality of first photoluminescence particles. The scattering particles and the first photoluminescence particles are collectively distributed in the glue layer. At least one of the scattering particles is located between the substrate and at least one of the first photoluminescence particles, and at least another of the first photoluminescence particles is located between the substrate and at least another of the scattering particles.

Abstract: A phosphor device of an illumination system emitting a first waveband light includes a substrate and a phosphor layer formed on the substrate. The phosphor layer includes a first phosphor agent and a second phosphor agent. The first waveband light is converted into a first color light by the first phosphor agent. The second phosphor agent is distributed over the first phosphor agent and mixed with the first phosphor agent, and the first waveband light is converted into a second color light by the second phosphor agent. The first color light and the second color light are integrated into the second waveband light. The difference between the first wavelength peak of the first color light and the second wavelength peak of the second color light is 50 to 100 nanometers. Therefore, the advantages of increasing the purity, the luminance and the luminous intensity of specific color light are achieved.

Abstract: A phosphor device of an illumination system emitting a first waveband light includes a substrate and a phosphor layer formed on the substrate. The phosphor layer includes a first phosphor agent and a second phosphor agent. The first waveband light is converted into a first color light by the first phosphor agent. The second phosphor agent is distributed over the first phosphor agent and mixed with the first phosphor agent, and the first waveband light is converted into a second color light by the second phosphor agent. The first color light and the second color light are integrated into the second waveband light. The difference between the first wavelength peak of the first color light and the second wavelength peak of the second color light is 50 to 100 nanometers. Therefore, the advantages of increasing the purity, the luminance and the luminous intensity of specific color light are achieved.

Abstract: A pixel structure includes a light emitting diode chip and a light blocking structure. The light emitting diode chip includes a P-type semiconductor layer, an active layer, an N-type semiconductor layer, a first electrode, and K second electrodes. The active layer is located on the P-type semiconductor layer. The N-type semiconductor layer is located on the active layer. The N-type semiconductor layer has a first top surface that is distant from the active layer. The first electrode is electrically connected to the P-type semiconductor layer. The light blocking structure is located in the light emitting diode chip and defines K sub-pixel regions. The active layer and the N-type semiconductor layer are divided into K sub-portions respectively corresponding to the K sub-pixel regions by the light blocking structure. The K sub-pixel regions share the P-type semiconductor layer.

Abstract: The present disclosure provides a light emitting structure including a blue light source, a first fluorescent material layer and a second fluorescent material layer. The blue light source has a light emitting surface. The first fluorescent material layer covers the light emitting surface of the blue light source. The first fluorescent material layer consists of a first fluorescent material. An excitation band of the first fluorescent material is in a blue wave band, and an emission band of the first fluorescent material is in a green wave band. The second fluorescent material layer covers the first fluorescent material layer. The second fluorescent material layer consists of a second fluorescent material. An excitation band of the second fluorescent material is in a green wave band, and an emission band of the second fluorescent material is in a red wave band. A light device and a backlight module are also provided herein.