Abstract: A rehabilitation device is provided, including a base, a finger sleeve assembly and a thumb sleeve assembly. The finger sleeve assembly includes a finger frame rotatably connected to the base and including first linkage slots, first linkage mechanisms disposed within the first linkage slots, and a first actuator rotatably connected to the base and a first actuator slot of the finger frame and configured to drive the finger frame so that the first linkage mechanisms are swingable with the finger frame. The thumb sleeve assembly includes a thumb frame rotatably connected to the base and including a second actuator slot, a second linkage mechanism disposed within the second actuator slot, and a second actuator rotatably connected to the base and a second actuator slot of the thumb frame and configured to drive the thumb so that the second linkage mechanism is swingable with the thumb frame.

Abstract: A process for forming a dual damascene cavity in a dielectric, particularly a low k organic dielectric, is described. The dielectric is composed of two layers separated by an etch stop layer. Formation of the damascene cavity is achieved by using a hard mask that is made up of two layers of silicon oxynitride separated by layer of silicon oxide. For both the trench first and via first approaches, the first cavity is formed using only the upper silicon oxynitride layer as the mask. Thus, when the second portion is patterned, little or no misalignment occurs because said upper layer is relatively thin. Additional etching steps result in a cavity and trench part that extend as far as the etch stop layer located between the dielectric layers. Final removal of photoresist occurs with a hard mask still in place so no damage to the organic dielectric occurs. A final etch step then completes the process.

Abstract: Within a method for etching a trench within a silicon oxide layer there is first provided a substrate. There is then formed over the substrate a silicon oxide layer. There is then formed over the silicon oxide layer a masking layer. There is then etched, while employing a plasma etch method in conjunction with the masking layer as an etch mask layer, the silicon oxide layer to form an etched silicon oxide layer defining a trench. Within the method, the plasma etch method employs an etchant gas composition comprising: (1) octafluorocyclobutane; and (2) at least one of carbon tetrafluoride, difluoromethane, hexafluoroethane and oxygen; but excluding (3) a carbon and oxygen containing gas.