Abstract: A semiconductor device structure and a method for forming a semiconductor device structure are provided. The semiconductor device structure includes a stack of channel structures over a base structure. The semiconductor device structure also includes a first epitaxial structure and a second epitaxial structure sandwiching the channel structures. The semiconductor device structure further includes a gate stack wrapped around each of the channel structures and a backside conductive contact connected to the second epitaxial structure. A first portion of the backside conductive contact is directly below the base structure, and a second portion of the backside conductive contact extends upwards to approach a bottom surface of the second epitaxial structure. In addition, the semiconductor device structure includes an insulating spacer between a sidewall of the base structure and the backside conductive contact.

Abstract: A semiconductor device with dual side source/drain (S/D) contact structures and a method of fabricating the same are disclosed. The method includes forming a fin structure on a substrate, forming a superlattice structure on the fin structure, forming first and second S/D regions within the superlattice structure, forming a gate structure between the first and second S/D regions, forming first and second contact structures on first surfaces of the first and second S/D regions, and forming a third contact structure, on a second surface of the first S/D region, with a work function metal (WFM) silicide layer and a dual metal liner. The second surface is opposite to the first surface of the first S/D region and the WFM silicide layer has a work function value closer to a conduction band energy than a valence band energy of a material of the first S/D region.

Abstract: A semiconductor device structure includes a source/drain feature comprising a first surface, a second surface opposing the first surface, and a sidewall connecting the first surface to the second surface. The structure also includes a dielectric layer having a continuous surface in contact with the entire second surface of the source/drain feature, a semiconductor layer having a first surface, a second surface opposing the first surface, and a sidewall connecting the first surface to the second surface, wherein the sidewall of the semiconductor layer is in contact with the sidewall of the source/drain feature. The structure also includes a gate dielectric layer in contact with the continuous surface of the dielectric layer and the second surface of the semiconductor layer, and a gate electrode layer surrounding a portion of the semiconductor layer.

Abstract: A power supply device and a wireless communication system are provided. The power supply device includes a data input port, a power over Ethernet control module, a network port, a decoder circuit and a signal strength indicator unit. The power over Ethernet control module is configured for receiving a data signal from the data input port to generate a data signal with power. The network port is configured for transmitting the data signal with power to the main board and receiving a signal in relation to a signal receiving strength state of the wireless communication device. The decoder circuit is connected to the network port and configured for generating a signal strength indicator signal. The signal strength indicator unit is connected to the decoder circuit and configured for receiving the signal strength indicator signal to display the signal receiving strength state of the wireless communication device.

Abstract: A signal transferring device adapted to connect to a communication device via a network cable, includes a network port, a third port, a decoder circuit and a signal strength indicator unit. The network port is connected to a communication device via a network cable. The third port is different from the network port and connected to a plurality of signal lines and a ground line of a main board of the communication device via the network port. The decoder circuit is connected to a power line, a ground line and at least one first control line of the main body to receiving a signal in relation to a signal receiving strength state of the communication device for generating a signal strength indicator signal. The signal strength indicator unit is connected to the decoder circuit and configured for displaying the signal receiving strength state of the communication device.

Abstract: A power supply device and a wireless communication system are provided. The power supply device includes a data input port, a power over Ethernet control module, a network port, a decoder circuit and a signal strength indicator unit. The power over Ethernet control module is configured for receiving a data signal from the data input port to generate a data signal with power. The network port is configured for transmitting the data signal with power to the main board and receiving a signal in relation to a signal receiving strength state of the wireless communication device. The decoder circuit is connected to the network port and configured for generating a signal strength indicator signal. The signal strength indicator unit is connected to the decoder circuit and configured for receiving the signal strength indicator signal to display the signal receiving strength state of the wireless communication device.

Abstract: A signal transferring device adapted to connect to a communication device via a network cable, includes a network port, a third port, a decoder circuit and a signal strength indicator unit. The network port is connected to a communication device via a network cable. The third port is different from the network port and connected to a plurality of signal lines and a ground line of a main board of the communication device via the network port. The decoder circuit is connected to a power line, a ground line and at least one first control line of the main body to receiving a signal in relation to a signal receiving strength state of the communication device for generating a signal strength indicator signal. The signal strength indicator unit is connected to the decoder circuit and configured for displaying the signal receiving strength state of the communication device.

Abstract: A communication terminal device is provided. The communication device includes a control unit, a WLAN module, a WMAN module and a VoIP module. The control unit provides a drive module for driving the WLAN module, the WMAN module and the VoIP module, and provides a real-time kernel module for achieving quality performance of the communication terminal device.

Abstract: A mobile terminal includes a power managing unit coupled to a control unit, and a switch unit coupled to the control unit and the power managing unit. The switch unit is operable so as to enable the power managing unit to supply electric power to the control unit. The switch unit is further operable so as to enable the control unit to perform one of controlling the power managing unit to stop supply of electric power thereto and a predetermined operation in response to duration of user actuation of the switch unit.

Abstract: A high gain broadband planar antenna is provided for overcoming conventional antenna structure that cannot be applied to a high gain broadband. The antenna includes a microwave substrate having a first surface and a second surface, a first symmetric radiation unit having a first radiation part and a second radiation part disposed on the first surface, a second symmetric radiation unit having a third radiation part and a fourth radiation part disposed on the second surface, and at least one connecting unit connected to the microwave substrate and a reflector. An end terminal of each first radiation part, second radiation part, third radiation part and fourth radiation part adopts a step structure design. The planar antenna of the present invention can achieve a high gain broadband effect.

Abstract: A high gain broadband planar antenna is provided for overcoming conventional antenna structure that cannot be applied to a high gain broadband. The antenna includes a microwave substrate having a first surface and a second surface, a first symmetric radiation unit having a first radiation part and a second radiation part disposed on the first surface, a second symmetric radiation unit having a third radiation part and a fourth radiation part disposed on the second surface, and at least one connecting unit connected to the microwave substrate and a reflector. An end terminal of each first radiation part, second radiation part, third radiation part and fourth radiation part adopts a step structure design. The planar antenna of the present invention can achieve a high gain broadband effect.

Abstract: A mobile terminal includes a power managing unit coupled to a control unit, and a switch unit coupled to the control unit and the power managing unit. The switch unit is operable so as to enable the power managing unit to supply electric power to the control unit. The switch unit is further operable so as to enable the control unit to perform one of controlling the power managing unit to stop supply of electric power thereto and a predetermined operation in response to duration of user actuation of the switch unit.