Patents by Inventor Li-Chi PENG
Li-Chi PENG has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11848195Abstract: A semiconductor device is provided. The semiconductor device includes a first semiconductor layer; a second semiconductor layer on the first semiconductor layer; an active region between the second semiconductor layer and the first semiconductor layer; an electron blocking structure between the active region and the second semiconductor layer; a first nitride semiconductor layer between the active region and the electron blocking structure, and including indium and aluminum elements; and a second nitride semiconductor layer between the electron blocking structure and the second semiconductor layer, including indium element and devoid of gallium element; wherein the first nitride semiconductor layer has a first indium content, the second nitride semiconductor layer has a second indium content, and the first indium content is greater than the second indium content.Type: GrantFiled: November 3, 2022Date of Patent: December 19, 2023Assignee: EPISTAR CORPORATIONInventors: Huan-Yu Lai, Li-Chi Peng
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Publication number: 20230055668Abstract: A semiconductor device is provided. The semiconductor device includes a first semiconductor layer; a second semiconductor layer on the first semiconductor layer; an active region between the second semiconductor layer and the first semiconductor layer; an electron blocking structure between the active region and the second semiconductor layer; a first nitride semiconductor layer between the active region and the electron blocking structure, and including indium and aluminum elements; and a second nitride semiconductor layer between the electron blocking structure and the second semiconductor layer, including indium element and devoid of gallium element; wherein the first nitride semiconductor layer has a first indium content, the second nitride semiconductor layer has a second indium content, and the first indium content is greater than the second indium content.Type: ApplicationFiled: November 3, 2022Publication date: February 23, 2023Applicant: EPISTAR CORPORATIONInventors: Huan-Yu LAI, Li-Chi PENG
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Patent number: 11586948Abstract: An IoT system includes a computing module for controlling an integral function of the system and including an analysis unit and a machine learning unit. The analysis unit is capable of operational analysis and creating a predictive model and creating a predictive model according to the data analyzed. The machine learning unit has an algorithm function to create a corresponding learning model. An IoT module is electrically connected to the computing module to serve as an intermediate role. At least one detection unit is electrically connected to the IoT module and disposed in soil to detect data of environmental and soil conditions and sends the data detected to the computing module for subsequent analysis.Type: GrantFiled: October 20, 2019Date of Patent: February 21, 2023Assignee: National Yang Ming Chiao Tung UniversityInventors: Wen-Liang Chen, Lung-Chieh Chen, Szu-Chia Chen, Wei-Han Chen, Chun-Yu Chu, Yu-Chi Shih, Yu-Ci Chang, Tzu-I Hsieh, Yen-Ling Chen, Li-Chi Peng, Meng-Zhan Lee, Jui-Yu Ho, Chi-Yao Ku, Nian-Ruei Deng, Yuan-Yao Chan, Erick Wang, Tai-Hsiang Yen, Shao-Yu Chiu, Jiun-Yi Lin, Yun-Wei Lin, Fung Ling Ng, Yi-Bing Lin, Chin-Cheng Wang
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Patent number: 11522102Abstract: A semiconductor device is provided. The semiconductor device includes a first semiconductor layer; a second semiconductor layer on the first semiconductor layer; an active region between the second semiconductor layer and the first semiconductor layer; an electron blocking structure between the active region and the second semiconductor layer; a first Group III-V semiconductor layer between the active region and the electron blocking structure; and a second Group III-V semiconductor layer between the electron blocking structure and the second semiconductor layer; wherein the first Group III-V semiconductor layer and the second Group III-V semiconductor layer each includes indium, aluminum and gallium, the first Group III-V semiconductor layer has a first indium content, the second Group III-V semiconductor layer has a second indium content, and the second indium content is less than the first indium content.Type: GrantFiled: January 15, 2021Date of Patent: December 6, 2022Assignee: EPISTAR CORPORATIONInventors: Huan-Yu Lai, Li-Chi Peng
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Publication number: 20210359158Abstract: A semiconductor device is provided. The semiconductor device includes a first semiconductor layer; a second semiconductor layer on the first semiconductor layer; an active region between the second semiconductor layer and the first semiconductor layer; an electron blocking structure between the active region and the second semiconductor layer; a first Group III-V semiconductor layer between the active region and the electron blocking structure; and a second Group III-V semiconductor layer between the electron blocking structure and the second semiconductor layer; wherein the first Group III-V semiconductor layer and the second Group III-V semiconductor layer each includes indium, aluminum and gallium, the first Group III-V semiconductor layer has a first indium content, the second Group III-V semiconductor layer has a second indium content, and the second indium content is less than the first indium content.Type: ApplicationFiled: January 15, 2021Publication date: November 18, 2021Inventors: Huan-Yu LAI, Li-Chi PENG
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Patent number: 10910518Abstract: A semiconductor device is provided. The semiconductor device includes a first semiconductor layer; a second semiconductor layer on the first semiconductor layer; an active region between the second semiconductor layer and the first semiconductor layer; an electron blocking structure between the active region and the second semiconductor layer; a first In-containing layer between the active region and the electron blocking structure; and a second In-containing layer between the electron blocking structure and the second semiconductor layer; wherein the first In-containing layer and the second In-containing layer each includes indium, aluminum and gallium, the first In-containing layer has a first aluminum content, the second In-containing layer has a second aluminum content, and the second aluminum content is less than the first aluminum content.Type: GrantFiled: May 13, 2020Date of Patent: February 2, 2021Assignee: EPISTAR CORPORATIONInventors: Huan-Yu Lai, Li-Chi Peng
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Publication number: 20210004694Abstract: An IoT system includes a computing module for controlling an integral function of the system and including an analysis unit and a machine learning unit. The analysis unit is capable of operational analysis and creating a predictive model and creating a predictive model according to the data analyzed. The machine learning unit has an algorithm function to create a corresponding learning model. An IoT module is electrically connected to the computing module to serve as an intermediate role. At least one detection unit is electrically connected to the IoT module and disposed in soil to detect data of environmental and soil conditions and sends the data detected to the computing module for subsequent analysis.Type: ApplicationFiled: October 20, 2019Publication date: January 7, 2021Applicant: NATIONAL CHIAO TUNG UNIVERSITYInventors: Wen-Liang Chen, Lung-Chieh Chen, Szu-Chia Chen, Wei-Han Chen, Chun-Yu Chu, Yu-Chi Shih, Yu-Ci Chang, Tzu-I Hsieh, Yen-Ling Chen, Li-Chi Peng, Meng-Zhan Lee, Jui-Yu Ho, Chi-Yao Ku, Nian-Ruei Deng, Yuan-Yao Chan, Erick Wang, Tai-Hsiang Yen, Shao-Yu Chiu, Jiun-Yi Lin, Yun-Wei Lin, Fung Ling Ng, Yi-Bing Lin, Chin-Cheng Wang
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Publication number: 20200274028Abstract: A semiconductor device is provided. The semiconductor device includes a first semiconductor layer; a second semiconductor layer on the first semiconductor layer; an active region between the second semiconductor layer and the first semiconductor layer; an electron blocking structure between the active region and the second semiconductor layer; a first In-containing layer between the active region and the electron blocking structure; and a second In-containing layer between the electron blocking structure and the second semiconductor layer; wherein the first In-containing layer and the second In-containing layer each includes indium, aluminum and gallium, the first In-containing layer has a first aluminum content, the second In-containing layer has a second aluminum content, and the second aluminum content is less than the first aluminum content.Type: ApplicationFiled: May 13, 2020Publication date: August 27, 2020Inventors: Huan-Yu LAI, Li-Chi PENG
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Patent number: 10693038Abstract: A semiconductor device is provided. The semiconductor device includes a first semiconductor layer; a second semiconductor layer on the first semiconductor layer; an active region between the second semiconductor layer and the first semiconductor layer; an electron blocking structure on the active region; a first In-containing layer between the active region and the electron blocking structure; and a second In-containing layer on the electron blocking structure; wherein the first In-containing layer has a first indium content, the second In-containing layer has a second indium content, and the second indium content is different from the first indium content.Type: GrantFiled: November 7, 2018Date of Patent: June 23, 2020Assignee: EPISTAR CorporationInventors: Huan-Yu Lai, Li-Chi Peng
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Publication number: 20190157510Abstract: A semiconductor device is provided. The semiconductor device includes a first semiconductor layer; a second semiconductor layer on the first semiconductor layer; an active region between the second semiconductor layer and the first semiconductor layer; an electron blocking structure on the active region; a first In-containing layer between the active region and the electron blocking structure; and a second In-containing layer on the electron blocking structure; wherein the first In-containing layer has a first indium content, the second In-containing layer has a second indium content, and the second indium content is different from the first indium content.Type: ApplicationFiled: November 7, 2018Publication date: May 23, 2019Inventors: Huan-Yu LAI, Li-Chi PENG