Patents by Inventor Li-Chie Chiao

Li-Chie Chiao has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Dry-wet-dry solvent-free process after stop layer etch in dual damascene process
    Patent number: 6797627
    Abstract: A new method is provided for the removal of polymer, possibly mixed with copper oxide residue, from exposed surfaces after an etch stop layer has been removed. The exposed surfaces are treated with a first plasma etch followed by a DI water rinse after which a second plasma etch of the exposed surfaces is performed. By selecting the chemistry and the conditions for the first and the second plasma etch, polymer residues and formed copper oxide residues are removed from the exposed surfaces.
    Type: Grant
    Filed: December 5, 2001
    Date of Patent: September 28, 2004
    Assignee: Taiwan Semiconductor Manufacturing Company Ltd.
    Inventors: Hsin-Ching Shih, Yi-Nien Su, Li-Te S. Lin, Li-Chie Chiao