Abstract: Some implementations described herein provide a reticle cleaning device and a method of use. The reticle cleaning device includes a support member configured for extension toward a reticle within an extreme ultraviolet lithography tool. The reticle cleaning device also includes a contact surface disposed at an end of the support member and configured to bond to particles contacted by the contact surface. The reticle cleaning device further includes a stress sensor configured to measure an amount of stress applied to the support member at the contact surface. During a cleaning operation in which the contact surface is moving toward the reticle, the stress sensor may provide an indication that the amount of stress applied to the support member satisfies a threshold. Based on satisfying the threshold, movement of the contact surface and/or the support member toward the reticle ceases to avoid damaging the reticle.

Abstract: An extreme ultraviolet (EUV) light source and a method for patterning a resist layer on a substrate using the EUV light source are disclosed. For example, the EUV light source includes a droplet generator, a droplet catcher, a laser source, a plurality of vanes, and a bucket. The droplet generator is to generate tin droplets. The droplet catcher is opposite to the droplet generator to catch the tin droplets. The laser source is to generate a laser beam striking the tin droplets to form a plasma. The plurality of vanes are arranged around an axis to collect tin debris created from the plasma. The bucket is connected to the vanes and includes a cover, a vane bucket, and a heater. The cover has an opening. The vane bucket is surrounded by the cover. The heater is on a sidewall of the cover and spaced apart from the droplet catcher.

Abstract: A semiconductor package and a method for manufacturing a semiconductor package are provided. The semiconductor package includes a first processing element, a first I/O element, a second processing element, and a second I/O element. The first processing element is on a substrate. The first I/O element is on the substrate and electrically connected to the first processing element. The second processing element is on the substrate. The second I/O element is on the substrate and electrically connected to the second processing element. The first I/O element is electrically connected to and physically separated from the second I/O element.

Abstract: The application discloses a device and method for beamforming. The beamforming method comprises: sending a null data packet announcement (NDPA) frame from a beamformer to a pseudo user and a target user to indicate the target user to prepare for channel estimation; sending a null data packet (NDP) from the beamformer to the target user and performing channel estimation by the target user based on the NDP to determine channel state information; sending a beamforming report poll (BRP) trigger frame from the beamformer to the target user to trigger the target user to feed back channel state information; and sending from the target user a beamforming report to the beamformer, wherein the beamforming report including the channel state information.

Abstract: The disclosure provides a processor and a pixel degradation compensation method thereof. The processor includes a processing circuit and a pixel degradation compensation circuit. The pixel degradation compensation circuit generates a current degradation value based on current sub-pixel data. The current degradation value represents the degradation effect of the current sub-pixel data on a corresponding sub-pixel in a display module. The pixel degradation compensation circuit may adjust the current degradation value to generate an adjusted degradation value corresponding to the current sub-pixel data. The adjusted degradation value is accumulated to a total degradation value corresponding to the current sub-pixel data. The pixel degradation compensation circuit compensates the current sub-pixel data based on the total degradation value corresponding to the current sub-pixel data so as to generate compensated current sub-pixel data to the display module.

Abstract: A semiconductor package and a method for manufacturing a semiconductor package are provided. The semiconductor package includes a first processing element, a first I/O element, a second processing element, and a second I/O element. The first processing element is on a substrate. The first I/O element is on the substrate and electrically connected to the first processing element. The second processing element is on the substrate. The second I/O element is on the substrate and electrically connected to the second processing element. The first I/O element is electrically connected to and physically separated from the second I/O element.

Abstract: Techniques pertaining to anti-motion and anti-interference frame exchange sequences in wireless communications are described. A station (STA), such as a Wi-Fi equipment, determines to enable a frame exchange sequence (FES). The STA then communicates with one or more other STAs by utilizing the FES in which preamble puncturing sounding and data transmission are performed in a same transmission opportunity (TXOP).

Abstract: A timing controller and a polarity control method thereof are provided. The timing controller includes a line buffer and a check circuit. The line buffer temporarily stores a plurality of sub-pixel data of a current sub-pixel row in an image frame so as to transmit the plurality of sub-pixel data of the current sub-pixel row to a source driver. The check circuit generates a polarity command corresponding to the current sub-pixel row for the source driver to set a polarity inversion mode of the current sub-pixel row. The check circuit checks the plurality of sub-pixel data of the current sub-pixel row so as to determine whether to dynamically change the polarity inversion mode of the current sub-pixel row.

Abstract: A semiconductor package and a method for manufacturing a semiconductor package are provided. The semiconductor package includes a first processing element, a first I/O element, a second processing element, and a second I/O element. The first processing element is on a substrate. The first I/O element is on the substrate and electrically connected to the first processing element. The second processing element is on the substrate. The second I/O element is on the substrate and electrically connected to the second processing element. The first I/O element is electrically connected to and physically separated from the second I/O element.

Abstract: A semiconductor package and a method for manufacturing a semiconductor package are provided. The semiconductor package includes a first processing element, a first I/O element, a second processing element, and a second I/O element. The first processing element is on a substrate. The first I/O element is on the substrate and electrically connected to the first processing element. The second processing element is on the substrate. The second I/O element is on the substrate and electrically connected to the second processing element. The first I/O element is electrically connected to and physically separated from the second I/O element.

Abstract: A semiconductor package and a method for manufacturing a semiconductor package are provided. The semiconductor package includes a first processing element, a first I/O element, a second processing element, and a second I/O element. The first processing element is on a substrate. The first I/O element is on the substrate and electrically connected to the first processing element. The second processing element is on the substrate. The second I/O element is on the substrate and electrically connected to the second processing element. The first I/O element is electrically connected to and physically separated from the second I/O element.

Abstract: The disclosure provides a method and an image processor for computing decay factors for display degradation compensation. The method includes the following steps. A sequence of frames including a current frame are received. Whether the current frame is a dynamic frame or a static frame is determined. When the current frame is the dynamic frame, accumulation on decay factors is performed. When the current frame is the static frame, accumulation on the decay factors is not performed.

Abstract: The disclosure provides a method and an image processor for computing decay factors for display degradation compensation. The method includes the following steps. A sequence of frames including a current frame are received. Whether the current frame is a dynamic frame or a static frame is determined. When the current frame is the dynamic frame, accumulation on decay factors is performed. When the current frame is the static frame, accumulation on the decay factors is not performed.

Abstract: The present invention provides a decay factor accumulation method for an organic light-emitting diode (OLED) display panel with a variable refresh rate (VRR). The decay factor accumulation method includes detecting an operating frame rate of an input image; generating a decay factor compensation coefficient according to the operating frame rate and a measurement frame rate; and generating a plurality of accumulated decay factors of the input image according to a decay factor lookup table corresponding to the measurement frame rate and the decay factor compensation coefficient.

Abstract: A charge pump circuit includes a first switch˜a fourth switch, a capacitor, a current source, a first resistor, a second resistor, an amplifier, another current source, a current mirror, a skip detection circuit, a switch generation circuit and a control unit. A method includes: (a) starting the charge pump circuit; (b) operating the charge pump circuit in a first phase, wherein the first switch and second switch are conducted and the third switch and fourth switch are disconnected; (c) operating the charge pump circuit in a second phase, wherein the third switch and fourth switch are conducted and the first switch and second switch are disconnected; (d) determining whether a detected voltage in the skip detection circuit is higher than a threshold voltage; and (e) selectively performing step (b) or (c) again according to determination result of step (d).

Abstract: A charge pump circuit includes a first switch˜a fourth switch, a capacitor, a current source, a first resistor, a second resistor, an amplifier, another current source, a current mirror, a skip detection circuit, a switch generation circuit and a control unit. A method includes: (a) starting the charge pump circuit; (b) operating the charge pump circuit in a first phase, wherein the first switch and second switch are conducted and the third switch and fourth switch are disconnected; (c) operating the charge pump circuit in a second phase, wherein the third switch and fourth switch are conducted and the first switch and second switch are disconnected; (d) determining whether a detected voltage in the skip detection circuit is higher than a threshold voltage; and (e) selectively performing step (b) or (c) again according to determination result of step (d).

Abstract: A charge pump and operating method thereof are disclosed. The charge pump includes a first capacitor to a third capacitor and a first switch to a tenth switch. The charge pump is used to receive an input voltage and provide an output voltage to a load capacitor. When the charge pump is operated in a first mode, the charge pump controls the second capacitor failure, the output voltage and the input voltage have opposite electricity and the output voltage is (?½) times the input voltage. When the charge pump is operated in a second mode, the charge pump controls the second capacitor failure, the output voltage and the input voltage have opposite electricity and the output voltage is (??) times the input voltage.

Abstract: A charge pump and operating method thereof are disclosed. The charge pump includes a first capacitor to a third capacitor and a first switch to a tenth switch. The charge pump is used to receive an input voltage and provide an output voltage to a load capacitor. When the charge pump is operated in a first mode, the charge pump controls the second capacitor failure, the output voltage and the input voltage have opposite electricity and the output voltage is (?½) times the input voltage. When the charge pump is operated in a second mode, the charge pump controls the second capacitor failure, the output voltage and the input voltage have opposite electricity and the output voltage is (??) times the input voltage.

Abstract: A voltage converter is disclosed. The voltage converter includes a constant on time signal generator, a first and second transistors, an inductor, a feedback circuit and a ripple injection circuit. The constant on time signal generator generates a first and second driving signals for driving the first and second transistors. The voltage converter generates an output signal at an output end thereof. The feedback circuit divides the output signal to generate a feedback signal at a feedback end of the voltage converter. The ripple injection circuit gets the voltage of the feedback end and the voltage of the phase end to generate a injection signal. The constant on time signal generator generates the first and second driving signals according to the injection signal, the output signal and a reference signal.

Abstract: A voltage converter includes a constant on time signal generator, a first transistor, a second transistor, an inductor, and a ripple injection circuit. The constant on time signal generator generates a first driving signal and a second driving signal. The ripple injection circuit receives an output signal and generates a ripple injection signal. The constant on time signal generator generates the first and second driving signals according to the ripple injection signal, the output signal, and a reference signal.