Abstract: A semiconductor device with dual side source/drain (S/D) contact structures and a method of fabricating the same are disclosed. The method includes forming a fin structure on a substrate, forming a superlattice structure on the fin structure, forming first and second S/D regions within the superlattice structure, forming a gate structure between the first and second S/D regions, forming first and second contact structures on first surfaces of the first and second S/D regions, and forming a third contact structure, on a second surface of the first S/D region, with a work function metal (WFM) silicide layer and a dual metal liner. The second surface is opposite to the first surface of the first S/D region and the WFM silicide layer has a work function value closer to a conduction band energy than a valence band energy of a material of the first S/D region.

Abstract: A multifunctional electrical power output protection device includes a protection device having a circuit board. The circuit board is mounted in a receiving space of the protection device and includes an input port, an output port, a switching element, a detection element, and a manually-operating overriding device. The manually-operating overriding device is electrically connected to an end of the detection element. The switching element has an end electrically connected to the input port and an opposite end electrically connected to the output port. The detection element has an end electrically connected to the input port and an opposite end electrically connected to the output port. The switching element and the detection element that are connectable to an external power supply respectively provide an effect of preventing backward charging induced by a reverse electrical current and effects of over-loading interruption and current-limiting protection.