Patents by Inventor Li-Chun Tien

Li-Chun Tien has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 12009304
    Abstract: A semiconductor device includes a substrate, a gate structure, source/drain structures, a backside via, and a power rail. The gate structure extends along a first direction parallel with a front-side surface of the substrate. The backside via extends along a second direction parallel with the front-side surface of the substrate but perpendicular to the first direction, the backside via has a first portion aligned with one of the source/drain structures along the first direction and a second portion aligned with the gate structure along the first direction, the first portion of the backside via has a first width along the first direction, and the second portion of the backside via has a second width along the first direction, in which the first width is greater than the second width. The power rail is on a backside surface of the substrate and in contact with the backside via.
    Type: Grant
    Filed: June 13, 2023
    Date of Patent: June 11, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Chih-Liang Chen, Li-Chun Tien
  • Publication number: 20240186326
    Abstract: A semiconductor device includes a plurality of standard cells. The plurality of standard cells include a first group of standard cells arranged in a first row extending in a row direction and a second group of standard cells arranged in a second row extending in the row direction. The first group of standard cells and the second group of standard cells are arranged in a column direction. A cell height of the first group of standard cells in the column direction is different from a cell height of the second group of standard cells in the column direction.
    Type: Application
    Filed: February 13, 2024
    Publication date: June 6, 2024
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Ta-Pen GUO, Lee-Chung LU, Li-Chun TIEN
  • Publication number: 20240178215
    Abstract: An integrated circuit includes a first transistor, a second transistor, a first power line, and a second power line. The first transistor has a first active region and a first gate structure, in which the first active region has a source region and a drain region on opposite sides of the first gate structure. The second transistor is below the first transistor, and has a second active region and a second gate structure, in which the second active region has a source region and a drain region on opposite sides of the second gate structure. The first power line is above the first transistor, in which the first power line is electrically connected to the source region of first active region. The second power line is below the second transistor, in which the second power line is electrically connected to the source region of second active region.
    Type: Application
    Filed: February 5, 2024
    Publication date: May 30, 2024
    Applicants: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., TSMC China Company Limited
    Inventors: Xin-Yong WANG, Li-Chun TIEN, Chih-Liang CHEN
  • Patent number: 11983479
    Abstract: A method of fabricating an integrated circuit includes placing a first set of conductive feature patterns on a first level, placing a second set of conductive feature patterns on a second level, placing a first set of via patterns between the second set of conductive feature patterns and the first set of conductive feature patterns, placing a third set of conductive feature patterns on a third level different from the first level and the second level, placing a second set of via patterns between the third set of conductive feature patterns and the second set of conductive feature patterns, and manufacturing the integrated circuit based on at least one of the above patterns of the integrated circuit.
    Type: Grant
    Filed: August 10, 2022
    Date of Patent: May 14, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Jung-Chan Yang, Ting-Wei Chiang, Jerry Chang-Jui Kao, Hui-Zhong Zhuang, Lee-Chung Lu, Li-Chun Tien, Meng-Hung Shen, Shang-Chih Hsieh, Chi-Yu Lu
  • Patent number: 11983475
    Abstract: A semiconductor device includes: M*1st conductors in a first layer of metallization (M*1st layer) and being aligned correspondingly along different corresponding ones of alpha tracks and representing corresponding inputs of a cell region in the semiconductor device; and M*2nd conductors in a second layer of metallization (M*2nd layer) aligned correspondingly along beta tracks, and the M*2nd conductors including at least one power grid (PG) segment and one or more of an output pin or a routing segment; and each of first and second ones of the input pins having a length sufficient to accommodate at most two access points; each of the access points of the first and second input pins being aligned to a corresponding different one of first to fourth beta tracks; and the PG segment being aligned with one of the first to fourth beta tracks.
    Type: Grant
    Filed: February 7, 2023
    Date of Patent: May 14, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Pin-Dai Sue, Po-Hsiang Huang, Fong-Yuan Chang, Chi-Yu Lu, Sheng-Hsiung Chen, Chin-Chou Liu, Lee-Chung Lu, Yen-Hung Lin, Li-Chun Tien, Yi-Kan Cheng
  • Publication number: 20240153942
    Abstract: An integrated circuit is provided and includes a multi-bit cell having multiple bit cells disposed in multiple cell rows. The bit cells include M bit cells, M being positive integers. A first bit cell of the bit cells and a M-th bit cell of the bit cells are arranged diagonally in different cell rows in the multi-bit cell. The multi-bit cell includes first to fourth cell boundaries. The first and second boundaries extend in a first direction and the third and fourth boundaries extend in a second direction different from the first direction. The first bit cell and a second bit cell of the bit cells abut the third cell boundary, and the first bit cell and a (M/2+1)-th bit cell of the bit cells abut the first cell boundary.
    Type: Application
    Filed: January 17, 2024
    Publication date: May 9, 2024
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Shao-Lun CHIEN, Po-Chun WANG, Hui-Zhong ZHUANG, Chih-Liang CHEN, Li-Chun TIEN
  • Publication number: 20240145481
    Abstract: A semiconductor structure includes a first transistor, a second transistor, a first dummy source/drain, a third transistor, a fourth transistor, and a second dummy source/drain. The first transistor and a second transistor adjacent to the first transistor are at a first elevation. The first dummy source/drain is disposed at the first elevation. The third transistor and a fourth transistor adjacent to the third transistor, are at a second elevation different from the first elevation. The second dummy source/drain is disposed at the second elevation. The second transistor is vertically aligned with the third transistor. The first dummy source/drain is vertically aligned with a source/drain of the fourth transistor. The second dummy source/drain is vertically aligned with a source/drain of the first transistor. The gate structure between the second dummy source/drain and a source/drain of the third transistor is absent. A method for manufacturing a semiconductor structure is also provided.
    Type: Application
    Filed: January 4, 2024
    Publication date: May 2, 2024
    Inventors: POCHUN WANG, GUO-HUEI WU, HUI-ZHONG ZHUANG, CHIH-LIANG CHEN, LI-CHUN TIEN
  • Patent number: 11967596
    Abstract: An integrated circuit includes a first-voltage power rail and a second-voltage power rail in a first connection layer, and includes a first-voltage underlayer power rail and a second-voltage underlayer power rail below the first connection layer. Each of the first-voltage and second-voltage power rails extends in a second direction that is perpendicular to a first direction. Each of the first-voltage and second-voltage underlayer power rails extends in the first direction. The integrated circuit includes a first via-connector connecting the first-voltage power rail with the first-voltage underlayer power rail, and a second via-connector connecting the second-voltage power rail with the second-voltage underlayer power rail.
    Type: Grant
    Filed: August 5, 2021
    Date of Patent: April 23, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Guo-Huei Wu, Shih-Wei Peng, Wei-Cheng Lin, Hui-Zhong Zhuang, Chih-Liang Chen, Li-Chun Tien, Lee-Chung Lu
  • Patent number: 11948886
    Abstract: A semiconductor device includes one or more active semiconductor components, wherein a front side is defined over the semiconductor substrate and a back side is defined beneath the semiconductor substrate. A front side power rail is formed at the front side of the semiconductor device and is configured to receive a first reference power voltage. First and second back side power rails are formed on the back side of the semiconductor substrate and are configured to receive corresponding second and third reference power voltages. The first, second and third reference power voltages are different from each other.
    Type: Grant
    Filed: April 29, 2021
    Date of Patent: April 2, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Guo-Huei Wu, Hui-Zhong Zhuang, Chih-Liang Chen, Li-Chun Tien
  • Publication number: 20240096865
    Abstract: A semiconductor device, includes a first metal layer, a second metal layer, a drain/source contact and at least one conductive via. The first metal layer has a first conductor that extends in a first direction and a second conductor that extends in the first direction, wherein the second conductor is directly adjacent to the first conductor. The second metal layer has a third conductor that extends in a second direction, wherein the second direction is transverse to the first direction. The drain/source contact extends in the second direction and is connected to the second conductor. The at least one conductive via connects the first conductor and the second conductor through the third conductor.
    Type: Application
    Filed: November 27, 2023
    Publication date: March 21, 2024
    Inventors: Wei-Hsin TSAI, Hui-Zhong ZHUANG, Chih-Liang CHEN, Li-Chun TIEN
  • Publication number: 20240096866
    Abstract: An integrated circuit includes first-type transistors aligned within a first-type active zone, second-type transistors aligned within a second-type active zone, a first power rail and a second power rail extending in a first direction. A first distance between the long edge of the first power rail and the first alignment boundary of the first-type active zone is different from a second distance between the long edge of the second power rail and the first alignment boundary of the second-type active zone. Each of the first distance and the second distance is along a second direction which is perpendicular to the first direction.
    Type: Application
    Filed: November 29, 2023
    Publication date: March 21, 2024
    Inventors: Guo-Huei WU, Chih-Liang CHEN, Li-Chun TIEN
  • Patent number: 11935893
    Abstract: A semiconductor device includes a plurality of standard cells. The plurality of standard cells include a first group of standard cells arranged in a first row extending in a row direction and a second group of standard cells arranged in a second row extending in the row direction. The first group of standard cells and the second group of standard cells are arranged in a column direction. A cell height of the first group of standard cells in the column direction is different from a cell height of the second group of standard cells in the column direction.
    Type: Grant
    Filed: May 3, 2021
    Date of Patent: March 19, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Ta-Pen Guo, Lee-Chung Lu, Li-Chun Tien
  • Publication number: 20240088147
    Abstract: An integrated circuit includes a first terminal-conductor, a second terminal-conductor, and a gate-conductor between the first terminal-conductor and the second terminal-conductor. The first terminal-conductor intersects both an active-region structure and a power rail. The second terminal-conductor intersects the active-region structure without intersecting the power rail. The gate-conductor intersects the active-region structure and is adjacent to the first terminal-conductor and the second terminal-conductor. A first width of the first terminal-conductor is larger than a second width of the second terminal-conductor by a predetermined amount.
    Type: Application
    Filed: January 9, 2023
    Publication date: March 14, 2024
    Inventors: XinYong WANG, Cun Cun CHEN, Ying HUANG, Chih-Liang CHEN, Li-Chun TIEN
  • Publication number: 20240088024
    Abstract: A semiconductor device includes a transistor layer, a first via layer over the transistor layer, a first metallization layer over the first via layer, the first metallization layer including first conductors having long axes extending substantially in a first direction, a second via layer over the first metallization layer, and a conductive deep via extending in the second via layer, the first metallization layer, and the first via layer. The first conductors represent a majority of conductive material in the first metallization layer, and a size of the deep via in the first direction in the first metallization layer is substantially less than a minimum length of the first conductors in the first metallization layer.
    Type: Application
    Filed: November 22, 2023
    Publication date: March 14, 2024
    Inventors: Ta-Pen GUO, Chien-Ying CHEN, Li-Chun TIEN, Lee-Chung LU
  • Publication number: 20240086612
    Abstract: An IC device includes first through third rows of fin field-effect transistors (FinFETs), wherein the second row is between and adjacent to each of the first and third rows, the FinFETs of the first row are one of an n-type or p-type, the FinFETs of the second and third rows are the other of the n-type or p-type, the FinFETs of the first and third rows include a first total number of fins, and the FinFETs of the second row include a second total number of fins one greater or fewer than the first total number of fins.
    Type: Application
    Filed: November 22, 2023
    Publication date: March 14, 2024
    Inventors: Po-Hsiang HUANG, Fong-Yuan CHANG, Clement Hsingjen WANN, Chih-Hsin KO, Sheng-Hsiung CHEN, Li-Chun TIEN, Chia-Ming HSU
  • Patent number: 11929361
    Abstract: An integrated circuit includes a first transistor, a second transistor, a first power line, and a second power line. The first transistor has a first active region and a first gate structure, in which the first active region has a source region and a drain region on opposite sides of the first gate structure. The second transistor is below the first transistor, and has a second active region and a second gate structure, in which the second active region has a source region and a drain region on opposite sides of the second gate structure. The first power line is above the first transistor, in which the first power line is electrically connected to the source region of first active region. The second power line is below the second transistor, in which the second power line is electrically connected to the source region of second active region.
    Type: Grant
    Filed: July 26, 2022
    Date of Patent: March 12, 2024
    Assignees: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., TSMC CHINA COMPANY LIMITED
    Inventors: Xin-Yong Wang, Li-Chun Tien, Chih-Liang Chen
  • Patent number: 11916074
    Abstract: Exemplary embodiments for an exemplary dual transmission gate and various exemplary integrated circuit layouts for the exemplary dual transmission gate are disclosed. These exemplary integrated circuit layouts represent double-height, also referred to as double rule, integrated circuit layouts. These double rule integrated circuit layouts include a first group of rows from among multiple rows of an electronic device design real estate and a second group of rows from among the multiple rows of the electronic device design real estate to accommodate a first metal layer of a semiconductor stack. The first group of rows can include a first pair of complementary metal-oxide-semiconductor field-effect (CMOS) transistors, such as a first p-type metal-oxide-semiconductor field-effect (PMOS) transistor and a first n-type metal-oxide-semiconductor field-effect (NMOS) transistor, and the second group of rows can include a second pair of CMOS transistors, such as a second PMOS transistor and a second NMOS transistor.
    Type: Grant
    Filed: July 27, 2022
    Date of Patent: February 27, 2024
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Shih-Wei Peng, Hui-Zhong Zhuang, Jiann-Tyng Tzeng, Li-Chun Tien, Pin-Dai Sue, Wei-Cheng Lin
  • Patent number: 11916058
    Abstract: An integrated circuit is provided and includes a multi-bit cell having multiple bit cells disposed in multiple cell rows. The bit cells include M bit cells, M being positive integers. A first bit cell of the bit cells and a M-th bit cell of the bit cells are arranged diagonally in different cell rows in the multi-bit cell. The multi-bit cell includes first to fourth cell boundaries. The first and second boundaries extend in a first direction and the third and fourth boundaries extend in a second direction different from the first direction. The first bit cell and a second bit cell of the bit cells abut the third cell boundary, and the first bit cell and a (M/2+1)-th bit cell of the bit cells abut the first cell boundary.
    Type: Grant
    Filed: July 29, 2022
    Date of Patent: February 27, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Shao-Lun Chien, Po-Chun Wang, Hui-Zhong Zhuang, Chih-Liang Chen, Li-Chun Tien
  • Publication number: 20240063211
    Abstract: A power gating cell on an integrated circuit is provided. The power gating cell includes: a central area; a peripheral area surrounding the central area; a first active region located in the central area, the first active region having a first width in a first direction corresponding to at least four fin structures extending in a second direction perpendicular to the first direction; and a plurality of second active regions located in the peripheral area, each second active region having a second width in the first direction corresponding to at least one and no more than three fin structures extending in the second direction.
    Type: Application
    Filed: August 10, 2023
    Publication date: February 22, 2024
    Inventors: Wei-Ling Chang, Jung-Chan Yang, Li-Chun Tien, Ting Yu Chen
  • Patent number: 11894383
    Abstract: A semiconductor structure includes a first transistor, a second transistor, a first dummy source/drain, a third transistor, a fourth transistor, and a second dummy source/drain. The first transistor and a second transistor adjacent to the first transistor are at a first elevation. The first dummy source/drain is disposed at the first elevation. The third transistor and a fourth transistor adjacent to the third transistor, are at a second elevation different from the first elevation. The second dummy source/drain is disposed at the second elevation. The second transistor is vertically aligned with the third transistor. The first dummy source/drain is vertically aligned with a source/drain of the fourth transistor. The second dummy source/drain is vertically aligned with a source/drain of the first transistor. The gate structure between the second dummy source/drain and a source/drain of the third transistor is absent. A method for manufacturing a semiconductor structure is also provided.
    Type: Grant
    Filed: May 31, 2022
    Date of Patent: February 6, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
    Inventors: Pochun Wang, Guo-Huei Wu, Hui-Zhong Zhuang, Chih-Liang Chen, Li-Chun Tien