Patents by Inventor Li-Chun Tien

Li-Chun Tien has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11532586
    Abstract: The present disclosure, in some embodiments, relates to a method of forming an integrated chip. The method may be performed by forming a first device tier including a first semiconductor substrate having a first plurality of devices. A second semiconductor substrate is formed over the first device tier. A first conductive layer is formed within the second semiconductor substrate, and a second conductive layer is formed within the second semiconductor substrate and over the first conductive layer. The first conductive layer and the second conductive layer have different patterns as viewed from a top-view. A second plurality of devices are formed on the second semiconductor substrate. The first and second conductive layers are configured to electrically couple the first plurality of devices and the second plurality of devices.
    Type: Grant
    Filed: September 30, 2019
    Date of Patent: December 20, 2022
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Hsiang-Jen Tseng, Wei-Yu Chen, Ting-Wei Chiang, Li-Chun Tien
  • Publication number: 20220382951
    Abstract: A method of fabricating an integrated circuit includes placing a first set of conductive feature patterns on a first level, placing a second set of conductive feature patterns on a second level, placing a first set of via patterns between the second set of conductive feature patterns and the first set of conductive feature patterns, placing a third set of conductive feature patterns on a third level different from the first level and the second level, placing a second set of via patterns between the third set of conductive feature patterns and the second set of conductive feature patterns, and manufacturing the integrated circuit based on at least one of the above patterns of the integrated circuit.
    Type: Application
    Filed: August 10, 2022
    Publication date: December 1, 2022
    Inventors: Jung-Chan YANG, Ting-Wei CHIANG, Jerry Chang-Jui KAO, Hui-Zhong ZHUANG, Lee-Chung LU, Li-Chun TIEN, Meng-Hung SHEN, Shang-Chih HSIEH, Chi-Yu LU
  • Publication number: 20220384598
    Abstract: A semiconductor structure includes an isolation structure formed on a substrate, a gate-all-around transistor structure formed on the isolation structure, a via electrically coupled to a gate terminal of the gate-all-around transistor structure, and a buried conductive pad formed within the isolation structure and electrically coupled to the via. The buried conductive pad can extend through the isolation structure in two dimensions, such as in both a vertical dimension and a horizontal dimension. The semiconductor structure can provide advantages in terms of routing flexibility, among other possible advantages.
    Type: Application
    Filed: May 26, 2021
    Publication date: December 1, 2022
    Applicant: Taiwan Semiconductor Manufacturing Company Ltd.
    Inventors: Guo-Huei Wu, Pochun Wang, Chih-Liang Chen, Li-Chun Tien
  • Publication number: 20220367440
    Abstract: An integrated circuit is provided and includes a multi-bit cell having multiple bit cells disposed in multiple cell rows. The bit cells include M bit cells, M being positive integers. A first bit cell of the bit cells and a M-th bit cell of the bit cells are arranged diagonally in different cell rows in the multi-bit cell. The multi-bit cell includes first to fourth cell boundaries. The first and second boundaries extend in a first direction and the third and fourth boundaries extend in a second direction different from the first direction. The first bit cell and a second bit cell of the bit cells abut the third cell boundary, and the first bit cell and a (M/2+1)-th bit cell of the bit cells abut the first cell boundary.
    Type: Application
    Filed: July 29, 2022
    Publication date: November 17, 2022
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Shao-Lun CHIEN, Po-Chun WANG, Hui-Zhong ZHUANG, Chih-Liang CHEN, Li-Chun TIEN
  • Publication number: 20220367519
    Abstract: A method is provided, and including operations as below: forming multiple active areas extending in a first direction; forming multiple conductive patterns extending in a second direction different from the first direction and arranged in a first layer above the active areas; forming multiple gates extending parallel to the conductive patterns; and forming a first set of conductive lines extending in the first direction and arranged in three first metal tracks that are in a second layer above the first layer, wherein one of the first set of conductive lines is arranged in a middle track of the three first metal tracks, coupled to one of the gates and overlap a first shallow trench region between two of the active areas.
    Type: Application
    Filed: July 27, 2022
    Publication date: November 17, 2022
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Guo-Huei WU, Chi-Yu LU, Ting-Yu CHEN, Li-Chun TIEN
  • Publication number: 20220367358
    Abstract: An integrated circuit includes a cell that is between a substrate and a supply conductive line and that includes a source region, a contact conductive line, a power conductive line, and a power via. The contact conductive line extends from the source region. The power conductive line is coupled to the contact conductive line. The power via interconnects the supply conductive line and the power conductive line.
    Type: Application
    Filed: July 29, 2022
    Publication date: November 17, 2022
    Inventors: Sheng-Hsiung Chen, Chung-Hsing Wang, Fong-yuan Chang, Lee-Chung Lu, Li-Chun Tien, Po-Hsiang Huang, Shao-huan Wang, Ting Yu Chen, Yen-Pin Chen, Chun-Chen Chen, Tzu-Hen Lin, Tai-Yu Cheng
  • Publication number: 20220367629
    Abstract: A method (of generating a layout diagram, the layout diagram being stored on a non-transitory computer-readable medium) includes: selecting first and second standard cells from a standard-cell-library; the first and second standard cells having corresponding first and second heights that are different from each other; stacking the first standard cell on the second standard cell to form a third cell; and including the third cell in a layout diagram. At least one aspect of the method is executed by a processor of a computer.
    Type: Application
    Filed: July 26, 2022
    Publication date: November 17, 2022
    Inventors: Jung-Chan YANG, Hui-Zhong ZHUANG, Lee-Chung LU, Ting-Wei CHIANG, Li-Chun TIEN
  • Publication number: 20220359493
    Abstract: An integrated circuit includes a first transistor, a second transistor, a first power line, and a second power line. The first transistor has a first active region and a first gate structure, in which the first active region has a source region and a drain region on opposite sides of the first gate structure. The second transistor is below the first transistor, and has a second active region and a second gate structure, in which the second active region has a source region and a drain region on opposite sides of the second gate structure. The first power line is above the first transistor, in which the first power line is electrically connected to the source region of first active region. The second power line is below the second transistor, in which the second power line is electrically connected to the source region of second active region.
    Type: Application
    Filed: July 26, 2022
    Publication date: November 10, 2022
    Applicants: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., TSMC China Company Limited
    Inventors: Xin-Yong WANG, Li-Chun TIEN, Chih-Liang CHEN
  • Publication number: 20220359512
    Abstract: Exemplary embodiments for an exemplary dual transmission gate and various exemplary integrated circuit layouts for the exemplary dual transmission gate are disclosed. These exemplary integrated circuit layouts represent double-height, also referred to as double rule, integrated circuit layouts. These double rule integrated circuit layouts include a first group of rows from among multiple rows of an electronic device design real estate and a second group of rows from among the multiple rows of the electronic device design real estate to accommodate a first metal layer of a semiconductor stack. The first group of rows can include a first pair of complementary metal-oxide-semiconductor field-effect (CMOS) transistors, such as a first p-type metal-oxide-semiconductor field-effect (PMOS) transistor and a first n-type metal-oxide-semiconductor field-effect (NMOS) transistor, and the second group of rows can include a second pair of CMOS transistors, such as a second PMOS transistor and a second NMOS transistor.
    Type: Application
    Filed: July 27, 2022
    Publication date: November 10, 2022
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Shih-Wei PENG, Hui-Zhong ZHUANG, Jiann-Tyng TZENG, Li-Chun TIEN, Pin-Dai SUE, Wei-Cheng LIN
  • Publication number: 20220343051
    Abstract: An integrated circuit includes a first and a set of conductive traces, and a first conductive feature. The second set of conductive traces includes a first conductive trace of the second set of conductive traces corresponding to a gate terminal of a first p-type transistor, and a second conductive trace of the second set of conductive traces corresponding to a gate terminal of a first n-type transistor. The first conductive feature corresponds to at least a first contact of a first dummy transistor. The first conductive trace of the second set of conductive traces is electrically coupled to the second conductive trace of the second set of conductive traces by at least the first conductive feature. The first n-type transistor being part of a first transmission gate. The first p-type transistor being part of a second transmission gate.
    Type: Application
    Filed: July 8, 2022
    Publication date: October 27, 2022
    Inventors: Ting-Wei CHIANG, Hui-Zhong ZHUANG, Li-Chun TIEN
  • Patent number: 11476250
    Abstract: Exemplary embodiments for an exemplary dual transmission gate and various exemplary integrated circuit layouts for the exemplary dual transmission gate are disclosed. These exemplary integrated circuit layouts represent double-height, also referred to as double rule, integrated circuit layouts. These double rule integrated circuit layouts include a first group of rows from among multiple rows of an electronic device design real estate and a second group of rows from among the multiple rows of the electronic device design real estate to accommodate a first metal layer of a semiconductor stack. The first group of rows can include a first pair of complementary metal-oxide-semiconductor field-effect (CMOS) transistors, such as a first p-type metal-oxide-semiconductor field-effect (PMOS) transistor and a first n-type metal-oxide-semiconductor field-effect (NMOS) transistor, and the second group of rows can include a second pair of CMOS transistors, such as a second PMOS transistor and a second NMOS transistor.
    Type: Grant
    Filed: December 14, 2020
    Date of Patent: October 18, 2022
    Inventors: Shih-Wei Peng, Hui-Zhong Zhuang, Jiann-Tyng Tzeng, Li-Chun Tien, Pin-Dai Sue, Wei-Cheng Lin
  • Publication number: 20220328410
    Abstract: A cell on an integrated circuit is provided. The cell includes: a fin structure; an intermediate fin structure connection metal track disposed in an intermediate fin structure connection metal layer above the fin structure, the intermediate fin structure connection metal track being connected to the fin structure; and a first intermediate gate connection metal track disposed in an intermediate gate connection metal layer above the intermediate fin structure connection metal layer, the first intermediate gate connection metal track being connected to the intermediate fin structure connection metal track. A first power supply terminal is connected to the first intermediate gate connection metal track.
    Type: Application
    Filed: April 25, 2022
    Publication date: October 13, 2022
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Li-Chun Tien, Chih-Liang Chen, Hui-Zhong Zhuang, Shun Li Chen, Ting Yu Chen
  • Patent number: 11469221
    Abstract: An integrated circuit includes a first transistor, a second transistor, a first power line, and a second power line. The first transistor has a first active region and a first gate structure, in which the first active region has a source region and a drain region on opposite sides of the first gate structure. The second transistor is below the first transistor, and has a second active region and a second gate structure, in which the second active region has a source region and a drain region on opposite sides of the second gate structure. The first power line is above the first transistor, in which the first power line is electrically connected to the source region of first active region. The second power line is below the second transistor, in which the second power line is electrically connected to the source region of second active region.
    Type: Grant
    Filed: December 1, 2020
    Date of Patent: October 11, 2022
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Xin-Yong Wang, Li-Chun Tien, Chih-Liang Chen
  • Patent number: 11461528
    Abstract: An integrated circuit structure includes a first, a second and a third set of conductive structures and a first and a second set of vias. The first set of conductive structures extend in a first direction, and is located at a first level. The second set of conductive structures extends in a second direction, overlaps the first set of conductive structures, and is located at a second level. The first set of vias is between, and electrically couples the first and the second set of conductive structures. The third set of conductive structures extends in the first direction, overlaps the second set of conductive structures, covers a portion of the first set of conductive structures, and is located at a third level. The second set of vias is between, and electrically couples the second and the third set of conductive structures.
    Type: Grant
    Filed: June 22, 2020
    Date of Patent: October 4, 2022
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Jung-Chan Yang, Ting-Wei Chiang, Jerry Chang-Jui Kao, Hui-Zhong Zhuang, Lee-Chung Lu, Li-Chun Tien, Meng-Hung Shen, Shang-Chih Hsieh, Chi-Yu Lu
  • Publication number: 20220310584
    Abstract: A semiconductor cell structure includes first-type transistors aligned within a first-type active zone, second-type transistors aligned within a second-type active zone, a first power rail and a second power rail. Each of the first-type active zone and the second-type active zone is between a first alignment boundary and a second alignment boundary extending in a first direction which is perpendicular to a second direction. A first distance along the second direction between the long edge of the first power rail and the first alignment boundary of the first-type active zone is different from a second distance along the second direction between the long edge of the second power rail and the first alignment boundary of the second-type active zone by a predetermined distance.
    Type: Application
    Filed: March 26, 2021
    Publication date: September 29, 2022
    Inventors: Guo-Huei WU, Chih-Liang CHEN, Li-Chun TIEN
  • Publication number: 20220310598
    Abstract: A semiconductor device includes a buried communication (com) conductor (BC) CFET including: first and second active regions arranged in a stack according to CFET-type configuration; a first layer of metallization (M_1st layer) over the stack which includes first conductors configured for data or control signals (communication (com) conductors), and power grid (PG) conductors; and a layer of metallization (M_B layer) below the stack and which includes second com conductors.
    Type: Application
    Filed: June 14, 2022
    Publication date: September 29, 2022
    Inventors: Guo-Huei Wu, Pochun Wang, Chih-Liang Chen, Li-Chun Tien
  • Publication number: 20220302111
    Abstract: A method is provided and includes operations below: forming a multilayer stack, wherein the multilayer stack includes multiple first semiconductor layers and multiple second semiconductor layers that are alternately stacked; forming a first source region and a first drain region on opposing sides of a first portion of the multilayer stack and forming a second source region and a second drain region on opposing sides of a second portion of the multilayer stack; removing the second semiconductor layers in the multilayer stack; forming a first gate region, corresponding to a first transistor, over the first portion of the multilayer stack; forming a first insulating layer above the first gate region; and forming a second gate region, corresponding to a second transistor, above the first insulating layer and over the second portion of the multilayer stack.
    Type: Application
    Filed: June 7, 2022
    Publication date: September 22, 2022
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Guo-Huei WU, Po-Chun WANG, Hui-Zhong ZHUANG, Chih-Liang CHEN, Li-Chun TIEN
  • Publication number: 20220293638
    Abstract: A semiconductor structure includes a first transistor, a second transistor, a first dummy source/drain, a third transistor, a fourth transistor, and a second dummy source/drain. The first transistor and a second transistor adjacent to the first transistor are at a first elevation. The first dummy source/drain is disposed at the first elevation. The third transistor and a fourth transistor adjacent to the third transistor, are at a second elevation different from the first elevation. The second dummy source/drain is disposed at the second elevation. The second transistor is vertically aligned with the third transistor. The first dummy source/drain is vertically aligned with a source/drain of the fourth transistor. The second dummy source/drain is vertically aligned with a source/drain of the first transistor. The gate structure between the second dummy source/drain and a source/drain of the third transistor is absent. A method for manufacturing a semiconductor structure is also provided.
    Type: Application
    Filed: May 31, 2022
    Publication date: September 15, 2022
    Inventors: POCHUN WANG, GUO-HUEI WU, HUI-ZHONG ZHUANG, CHIH-LIANG CHEN, LI-CHUN TIEN
  • Patent number: 11444071
    Abstract: An integrated circuit disclosed here includes several cell rows extending in a first direction and a multi-bit cell having several bit cells included in the cell rows. The bit cells include M bit cells, and an output signal of a N-th bit cell of the M bit cells is an input signal of a (N+1)-th bit cell of the M bit cells, N and M being positive integers. A first bit cell of the bit cells and a M-th bit cell of the bit cells are arranged diagonally in different cell rows in the multi-bit cell, and the N-th bit cell and the (N+1)-th bit cell are arranged diagonally in different cell rows in the multi-bit cell.
    Type: Grant
    Filed: June 29, 2020
    Date of Patent: September 13, 2022
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Shao-Lun Chien, Po-Chun Wang, Hui-Zhong Zhuang, Chih-Liang Chen, Li-Chun Tien
  • Patent number: RE49331
    Abstract: A set of masks corresponds to an integrated circuit layout. The integrated circuit layout includes a first cell having a first transistor region and a second transistor region, and a second cell having a third transistor region and a fourth transistor region. The first cell and the second cell adjoin each other at side cell boundaries thereof, the first transistor region and the third transistor region are formed in a first continuous active region, and the second transistor region and the fourth transistor region are formed in a second continuous active region. The set of masks is formed based on the integrated circuit layout.
    Type: Grant
    Filed: April 18, 2018
    Date of Patent: December 13, 2022
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Lee-Chung Lu, Li-Chun Tien, Hui-Zhong Zhuang, Chang-Yu Wu