Patents by Inventor Li-Chun Tseng

Li-Chun Tseng has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Electrical connection structure and electronic device comprising the same
    Patent number: 11974479
    Abstract: An electrical connection structure is provided. The electrical connection structure includes a through hole, a first pad, a second pad and a conductive bridge. The through hole has a first end and a second end. The first pad at least partially surrounds the first end of the through hole and is electrically connected to a first circuit. The second pad is located at the second end of the through hole and is electrically connected to a second circuit. The conductive bridge is connected to the first pad and second pad through the through hole, thereby making the first and second circuits electrically connected to each other.
    Type: Grant
    Filed: December 11, 2020
    Date of Patent: April 30, 2024
    Assignee: INNOLUX CORPORATION
    Inventors: Shun-Yuan Hu, Chin-Lung Ting, Li-Wei Mao, Ming-Chun Tseng, Kung-Chen Kuo, Yi-Hua Hsu, Ker-Yih Kao
  • Method for designing photomask
    Patent number: 11143973
    Abstract: A method for designing a photomask includes calculating an open ratio of an initial photomask to determine whether the open ratio of the initial photomask is less than 25%, and then changing a design of the initial photomask in response to determining the open ratio is less than 25%, such that a changed photomask has a reverse tone to the design of the initial photomask, and an open ratio of the changed photomask is 75% or more. The method can solve the issue caused by thermal expansion of the photomask.
    Type: Grant
    Filed: April 3, 2019
    Date of Patent: October 12, 2021
    Assignee: Powerchip Semiconductor Manufacturing Corporation
    Inventors: Hsiao-Chiang Lin, Yu-Hsuan Chang, Li-Chun Tseng
  • METHOD FOR DESIGNING PHOTOMASK AND SEMICONDUCTOR PHOTOLITHOGRAPHY PROCESS
    Publication number: 20200241431
    Abstract: A method for designing a photomask includes calculating an open ratio of an initial photomask to determine whether the open ratio of the initial photomask is less than 25%, and then changing a design of the initial photomask in response to determining the open ratio is less than 25%, such that a changed photomask has a reverse tone to the design of the initial photomask, and an open ratio of the changed photomask is 75% or more. The method can solve the issue caused by thermal expansion of the photomask.
    Type: Application
    Filed: April 3, 2019
    Publication date: July 30, 2020
    Applicant: Powerchip Technology Corporation
    Inventors: Hsiao-Chiang Lin, Yu-Hsuan Chang, Li-Chun Tseng