Abstract: A method includes following steps. A photoresist-coated substrate is received to an extreme ultraviolet (EUV) tool. An EUV radiation is directed from a radiation source onto the photoresist-coated substrate, wherein the EUV radiation is generated by an excitation laser hitting a plurality of target droplets ejected from a first droplet generator. The first droplet generator is replaced with a second droplet generator at a temperature not lower than about 150° C.

Abstract: A method of lithography process is provided. The method includes forming a conductive layer over a reticle. The method includes applying ionized particles to the reticle by a discharging device. The method includes forming a photoresist layer over a semiconductor substrate. The method includes securing the semiconductor substrate by a wafer electrostatic-clamp. The method also includes patterning the photoresist layer by emitting radiation from a radiation source via the reticle.

Abstract: A semiconductor device includes: M*1st conductors in a first layer of metallization (M*1st layer) and being aligned correspondingly along different corresponding ones of alpha tracks and representing corresponding inputs of a cell region in the semiconductor device; and M*2nd conductors in a second layer of metallization (M*2nd layer) aligned correspondingly along beta tracks, and the M*2nd conductors including at least one power grid (PG) segment and one or more of an output pin or a routing segment; and each of first and second ones of the input pins having a length sufficient to accommodate at most two access points; each of the access points of the first and second input pins being aligned to a corresponding different one of first to fourth beta tracks; and the PG segment being aligned with one of the first to fourth beta tracks.

Abstract: An extreme ultra violet (EUV) radiation source apparatus includes a collector mirror, a target droplet generator for generating a tin (Sn) droplet, a rotatable debris collection device, one or more coils for generating an inductively coupled plasma (ICP), a gas inlet for providing a source gas for the ICP, and a chamber enclosing at least the collector mirror and the rotatable debris collection device. The gas inlet and the one or more coils are configured such that the ICP is spaced apart from the collector mirror.

Abstract: The present disclosure provides a method for aligning a master oscillator power amplifier (MOPA) system. The method includes ramping up a pumping power input into a laser amplifier chain of the MOPA system until the pumping power input reaches an operational pumping power input level; adjusting a seed laser power output of a seed laser of the MOPA system until the seed laser power output is at a first level below an operational seed laser power output level; and performing a first optical alignment process to the MOPA system while the pumping power input is at the operational pumping power input level, the seed laser power output is at the first level, and the MOPA system reaches a steady operational thermal state.

Abstract: A gas sensor is revealed, and the gas sensor comprises a sapphire substrate. An epitaxial oxide sensing layer is disposed on the sapphire substrate and formed by a thin film of single-crystalline gallium oxide series grown by using metal-organic chemical vapor deposition. The material of epitaxial oxide sensing layer include oxygen, gallium, and zinc. Two electrodes are disposed on a portion of the epitaxial oxide sensing layer. When the epitaxial oxide sensing layer senses a gas, a current will be generated and change the resistance. The two electrodes thereon receive the resistance. According to the change of the resistance, the concentration of the gas can be deduced. A heating element is further disposed below the sapphire substrate for providing the temperature required for sensing.

Abstract: The present invention provides a method for manufacturing a wide-bandgap oxide epitaxial film. An epitaxial film with superior physical properties, such as high saturated drift velocity of electrons, small dielectric constant, high thermal stability, and excellent high-temperature resistance, is formed on a substrate. In addition, because the oxide epitaxial film is grown by metal-organic chemical vapor deposition (MOCVD), the yield is improved significantly and defects in the epitaxy is reduced.

Abstract: The present invention provides a solar-blind detecting device with a wide-bandgap oxide, which comprises an oxide epitaxial sensing layer disposed on a substrate for improving the property as well as substantially increasing the photocurrent in the oxide epitaxial sensing layer under the stimulation of ultraviolet light. Particularly, the sensing performance for the deep ultraviolet region (200˜280 nanometers) is enhanced significantly.

Abstract: A multiphoton luminescence excitation microscopy utilizing a digital micromirror device (DMD), wherein the multiphoton luminescence excitation microscopy generates luminescence excitation light information according to excitation of a sample, comprising an excitation light source, a plurality of lenses, a digital micromirror device (DMD), an objective lens, a dichroic mirror and a light detector. The DMD is utilized to replace the conventional diffraction grating of luminescence excitation microscopy The DMD has advantages of easy accessibility, relatively low cost, successfully achieves temporal-focusing at the image formation plane, and the grating effect.