Abstract: A semiconductor device and method of manufacture are provided. In some embodiments isolation regions are formed by modifying a dielectric material of a dielectric layer such that a first portion of the dielectric layer is more readily removed by an etching process than a second portion of the dielectric layer. The modifying of the dielectric material facilitates subsequent processing steps that allow for the tuning of a profile of the isolation regions to a desired geometry based on the different material properties of the modified dielectric material.

Abstract: A use of an anthranilic acid derivative as a matrix for a MALDI Mass spectrometry, comprising: preparing a matrix compound represented by the following formula: wherein X is selected from hydrogen and a hydroxyl group, and Y is selected from hydrogen, a methyl group or an acetyl group, provided that when X is hydrogen, Y is hydrogen or an acetyl group, and when X is a hydroxyl group, Y is a methyl group; applying the matrix compound and an analyte onto a sample holder; and analyzing the analyte by the MALDI mass spectrometer.

Abstract: A use of an anthranilic acid derivative as a matrix for a MALDI Mass spectrometry, comprising: preparing a matrix compound represented by the following formula: wherein X is selected from hydrogen and a hydroxyl group, and Y is selected from hydrogen, a methyl group or an acetyl group, provided that when X is hydrogen, Y is hydrogen or an acetyl group, and when X is a hydroxyl group, Y is a methyl group; applying the matrix compound and an analyte onto a sample holder; and analyzing the analyte by the MALDI mass spectrometer.