Patents by Inventor Li-Guo Xu

Li-Guo Xu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of synthesizing silicon wires
    Patent number: 8058117
    Abstract: A method of synthesizing silicon wires is provided. A substrate is provided. A copper catalyst particle layer is formed on a top surface of the substrate. The reactive device is heated at a temperature of above 450° C. in a flowing protective gas. A mixture of a protective gas and a silicon-based reactive gas is introduced at a temperature above 450° C. at a pressure below 700 Torr to form the silicon wires on the substrate.
    Type: Grant
    Filed: October 23, 2009
    Date of Patent: November 15, 2011
    Assignees: Tsinghua University, Hon Hai Precision Industry Co., Ltd.
    Inventors: Yuan Yao, Li-Guo Xu, Shou-Shan Fan
  • Method of synthesizing silicon wires
    Patent number: 7825036
    Abstract: A method of synthesizing silicon wires generally includes the steps of: providing a substrate; forming a copper catalyst particle layer on a top surface of the substrate; heating the reactive device at a temperature of above 450° C. in a flowing protective gas; and introducing a mixture of a protective gas and a silicon-based reactive gas at a temperature of above 450° C. at a pressure of below 700 Torr, thereby forming the silicon wires on the substrate.
    Type: Grant
    Filed: September 22, 2006
    Date of Patent: November 2, 2010
    Assignees: Tsinghua University, Hon Hai Precision Industry Co., Ltd.
    Inventors: Yuan Yao, Li-Guo Xu, Shou-Shan Fan
  • Method of synthesizing silicon wires
    Publication number: 20100041217
    Abstract: A method of synthesizing silicon wires is provided. A substrate is provided. A copper catalyst particle layer is formed on a top surface of the substrate. The reactive device is heated at a temperature of above 450° C. in a flowing protective gas. A mixture of a protective gas and a silicon-based reactive gas is introduced at a temperature above 450° C. at a pressure below 700 Torr to form the silicon wires on the substrate.
    Type: Application
    Filed: October 23, 2009
    Publication date: February 18, 2010
    Applicants: Tsinghua University
    Inventors: Yuan Yao, Li-Guo Xu, Shou-Shan Fan
  • Method of synthesizing silicon wires
    Publication number: 20070166899
    Abstract: A method of synthesizing silicon wires generally includes the steps of: providing a substrate; forming a copper catalyst particle layer on a top surface of the substrate; heating the reactive device at a temperature of above 450° C. in a flowing protective gas; and introducing a mixture of a protective gas and a silicon-based reactive gas at a temperature of above 450° C. at a pressure of below 700 Torr, thereby forming the silicon wires on the substrate.
    Type: Application
    Filed: September 22, 2006
    Publication date: July 19, 2007
    Applicants: Tsinghua University, HON HAI Precision Industry CO., LTD.
    Inventors: Yuan Yao, Li-Guo Xu, Shou-Shan Fan