Abstract: A field effect transistor includes a substrate having a transistor forming region thereon; an insulating layer on the substrate; a first graphene layer on the insulating layer within the transistor forming region; an etch stop layer on the first graphene layer within the transistor forming region; a first inter-layer dielectric layer on the etch stop layer; a gate trench recessed into the first inter-layer dielectric layer and the etch stop layer within the transistor forming region; a second graphene layer on interior surface of the gate trench; a gate dielectric layer on the second graphene layer and on the first inter-layer dielectric layer; and a gate electrode on the gate dielectric layer within the gate trench.

Abstract: A method and a system for evaluating data. The method comprises: receiving an Object Constraint Language (OCL) expression-based evaluation request; transforming at least part of the OCL expressions in the evaluation request into query requests; querying relevant data based on the query requests; and evaluating data obtained from the querying based on the evaluation request. The present invention may support evaluation of complex OCL expressions on a mass data set.

Abstract: A method and a system for evaluating data. The method comprises: receiving an Object Constraint Language (OCL) expression-based evaluation request; transforming at least part of the OCL expressions in the evaluation request into query requests; querying relevant data based on the query requests; and evaluating data obtained from the querying based on the evaluation request. The present invention may support evaluation of complex OCL expressions on a mass data set.