Abstract: The invention provides a layout pattern of static random access memory (SRAM), which at least comprises a plurality of gate structures located on a substrate and spanning the plurality of fin structures to form a plurality of transistors distributed on the substrate, wherein the plurality of transistors comprise two pull-up transistors (PU), two pull-down transistors (PD) to form a latch circuit, and two access transistors (PG) connected to the latch circuit. In each SRAM memory cell, the fin structure included in the pull-up transistor (PU) is defined as a PU fin structure, the fin structure included in the pull-down transistor (PD) is defined as a PD fin structure, and the fin structure included in the access transistor (PG) is defined as a PG fin structure, wherein a width of the PD fin structure is wider than a width of the PG fin structure.

Abstract: The present disclosure provides a semiconductor structure with having a source/drain feature with a central cavity, and a source/drain contact feature formed in central cavity of the source/drain region, wherein the source/drain contact feature is nearly wrapped around by the source/drain region. The source/drain contact feature may extend to a lower most of a plurality semiconductor layers.

Abstract: Methods of cutting gate structures and fins, and structures formed thereby, are described. In an embodiment, a substrate includes first and second fins and an isolation region. The first and second fins extend longitudinally parallel, with the isolation region disposed therebetween. A gate structure includes a conformal gate dielectric over the first fin and a gate electrode over the conformal gate dielectric. A first insulating fill structure abuts the gate structure and extends vertically from a level of an upper surface of the gate structure to at least a surface of the isolation region. No portion of the conformal gate dielectric extends vertically between the first insulating fill structure and the gate electrode. A second insulating fill structure abuts the first insulating fill structure and an end sidewall of the second fin. The first insulating fill structure is disposed laterally between the gate structure and the second insulating fill structure.

Abstract: A semiconductor device includes a substrate, a dielectric layer disposed over the substrate, and an interconnect structure extending through the dielectric layer. The dielectric layer includes a low-k dielectric material which includes silicon carbonitride having a carbon content ranging from about 30 atomic % to about 45 atomic %. The semiconductor device further includes a thermal dissipation feature extending through the dielectric layer and disposed to be spaced apart from the interconnect structure.

Abstract: A driving simulation device for executing a simulating game includes a mounting frame and a seat body. The seat body has a coupling portion and a seating portion located above the coupling portion. The seat body further includes first and second connecting rods having at least two fixing parts journaled to the mounting frame, two swinging parts journaled to the coupling portion of the seat body and two coupling parts interconnecting the fixing parts and the swinging parts and transversely crossing each other. Once a rider is seated on the seating portion and swings the seat body so as to simulate a driving action, the seating portion and the coupling portion swing respectively in two directions opposite to each other, and thereby a swinging center of the seat body can fall between the coupling portion and the seating portion.

Abstract: A driving simulation device for simulating a driving game includes a mounting frame, a coupler shaft journaled to the mounting frame, extending along a coupling axis and cooperating with a horizontal direction to define an inclined acute angle, a seat body fixed on the coupler shaft above the mounting frame and having an extending direction, a seating portion and a driving portion disposed on the seat body along the extending direction. The extending direction of the seat body cooperates with the coupling axis to define a deviating acute angle therebetween. A swinging action of a rider on the seat body relative to the mounting frame results in turning of the seat body about the coupling axis, which, in turn, causes swinging action of the driving portion and the seating portion such that a swinging range of the driving portion is smaller than that of the seating portion.

Abstract: A driving simulation device for executing a simulating game includes a mounting frame and a seat body. The seat body has a coupling portion and a seating portion located above the coupling portion. The seat body further includes first and second connecting rods having at least two fixing parts journaled to the mounting frame, two swinging parts journaled to the coupling portion of the seat body and two coupling parts interconnecting the fixing parts and the swinging parts and transversely crossing each other. Once a rider is seated on the seating portion and swings the seat body so as to simulate a driving action, the seating portion and the coupling portion swing respectively in two directions opposite to each other, and thereby a swinging center of the seat body can fall between the coupling portion and the seating portion.