Abstract: A method of about using icons and labels on window operation platform to express status of the memory card in a card reader having multiple slots is disclosed. The AP (application software) timely sends an inquiring packet to the reader. The card reader inspects the card status and then in response to the host with a responsive packet to the host. The AP then updates the icon and label in accordance with the responsive pocket, wherein the inquiring packet and responsive packet are through SCSI Pass through mode.

Abstract: A method of about using icons and labels on window operation platform to express status of the memory card in a card reader having multiple slots is disclosed. The AP (application software) timely sends an inquiring packet to the reader. The card reader inspects the card status and then in response to the host with a responsive packet to the host. The AP then updates the icon and label in accordance with the responsive pocket, wherein the inquiring packet and responsive packet are through SCSI Pass through mode.

Abstract: Methods and systems are provided for forming an electrical interconnect layer between two layers of an integrated circuit. The interconnect layer is formed using a material having a first electrical conductivity corresponding to a first state and a second electrical conductivity corresponding to a second state, where the first electrical conductivity is different from the second electrical conductivity. An area of the material of the interconnect layer may be selected, for example, using a mask. Then energy may be applied to the selected area to change the electrical conductivity of the material in the selected area of the interconnect layer. Thus, the present invention may be used to implement optical memory devices which may be read by an electrical circuit.

Abstract: Methods and systems are provided for forming an electrical interconnect layer between two layers of an integrated circuit. The interconnect layer is formed using a material having a first electrical conductivity corresponding to a first state and a second electrical conductivity corresponding to a second state, where the first electrical conductivity is different from the second electrical conductivity. An area of the material of the interconnect layer may be selected, for example, using a mask. Then energy may be applied to the selected area to change the electrical conductivity of the material in the selected area of the interconnect layer. Thus, the present invention may be used to implement optical memory devices which may be read by an electrical circuit.

Abstract: A method of fabricating a memory device that includes defining a semiconductor substrate of a first dopant type, providing a doped layer of a second dopant type over the substrate, providing a dielectric layer over the doped layer, forming a plug in the dielectric layer, doping the plug with a dopant of the second type substantially over the entire region of the plug, doping the plug having doped with the second dopant type with a dopant of the first type, and providing a memory cell over the plug.