Abstract: In a method of cleaning a lithography system, during idle mode, a stream of air is directed, through a first opening, into a chamber of a wafer table of an EUV lithography system. One or more particles is extracted by the directed stream of air from surfaces of one or more wafer chucks in the chamber of the wafer table. The stream of air and the extracted one or more particle are drawn, through a second opening, out of the chamber of the wafer table.

Abstract: An adaptable lock mounting device featuring adaptability and flexibility of use is configured to couple with a vehicle frame and includes a mounting base to detachably couple with a coupling base or an assembly base as appropriate, wherein the coupling base is different from the assembly base. A portion of the mounting base is one of a sliding block and a corresponding sliding sleeve to be fitted around the sliding block, while each of a portion of the coupling base and a portion of the assembly base is the other of the sliding block and the corresponding sliding sleeve.

Abstract: An adaptable lock mounting device featuring adaptability and flexibility of use is configured to couple with a vehicle frame and includes a mounting base to detachably couple with a coupling base or an assembly base as appropriate, wherein the coupling base is different from the assembly base. A portion of the mounting base is one of a sliding block and a corresponding sliding sleeve to be fitted around the sliding block, while each of a portion of the coupling base and a portion of the assembly base is the other of the sliding block and the corresponding sliding sleeve.

Abstract: A transparent layer of a LED device and the method for growing the same are disclosed in this present invention. This present invention provides an improved liquid phase epitaxy (LPE) process for growing a transparent layer of a LED device. In the above-mentioned LPE process, an improved supersaturated solution is utilized to overcome the shortcomings in the prior art, wherein the supersaturated solution comprises antimony and/or indium as a solvent. Furthermore, a metallic zinc and/or magnesium dopant is added into the supersaturated solution to optimize the characters of the transparent layer. Therefore, this invention can provide a more efficient method for growing a transparent layer of a LED device, and the quality of the above-mentioned transparent layer can thereby be improved.

Abstract: A transparent layer of a LED device and the method for growing the same are disclosed in this present invention. This present invention provides an improved liquid phase epitaxy (LPE) process for growing a transparent layer of a LED device. In the above-mentioned LPE process, an improved supersaturated solution is utilized to overcome the shortcomings in the prior art, wherein the supersaturated solution comprises antimony and/or indium as a solvent. Furthermore, a metallic zinc and/or magnesium dopant is added into the supersaturated solution to optimize the characters of the transparent layer. Therefore, this invention can provide a more efficient method for growing a transparent layer of a LED device, and the quality of the above-mentioned transparent layer can thereby be improved.

Abstract: A light emitting diode is made by a compound semiconductor in which light emitting from an active region with a multi-quantum well structure. The active region is sandwiched by InGaAlP-based lower and upper cladding layers. Emission efficiency of the active region is improved by adding light and electron reflectors in the light emitting diode. These InGaAlP-based layers are grown epitaxially by Organometallic Vapor-Phase Epitaxy (OMVPE) on a GaAs substrate with a thin thickness to improve the thermal gradient, reliability, brightness quality, and performance in light emitting.

Abstract: A transparent layer of a LED device and the method for growing the same are disclosed in this present invention. This present invention provides an improved liquid phase epitaxy (LPE) process for growing a transparent layer of a LED device. In the above-mentioned LPE process, an improved supersaturated solution is utilized to overcome the shortcomings in the prior art, wherein the supersaturated solution comprises antimony and/or indium as a solvent. Furthermore, a metallic zinc and/or magnesium dopant is added into the supersaturated solution to optimize the characters of the transparent layer. Therefore, this invention can provide a more efficient method for growing a transparent layer of a LED device, and the quality of the above-mentioned transparent layer can thereby be improved.

Abstract: A light emitting diode is made by a compound semiconductor in which light is emitted from an active region with a multiple quantum well structure. The active region is sandwiched by InGaAlP-based lower and upper cladding layers. Emission efficiency of the active region is improved by adding light and electron reflectors in the light emitting diode. These InGaAlP-based layers are grown epitaxially by Organometallic Vapor-Phase Epitaxy (OMVPE) on a GaAs substrate with a misorientation angle toward <111>A to improve the quality and surface morphology of the epilayer and performance in light emitting. The lower cladding layer of first conductivity type forms on a misoriented substrate with the same type of conductivity. Light transparent and current diffusion layers with a second conductivity is formed on top of the upper cladding layer for the spreading of current and expansion of the emission light.

Abstract: A light emitting diode is made by a compound semiconductor in which light emitting from an active region with a multiple quantum well structure. The active region is sandwiched by InGaAlP-based lower and upper cladding layers. Emission efficiency of the active region is improved by adding light and electron reflectors in the light emitting diode. These InGaAlP-based layers are grown epitaxially by Organometallic Vapor-Phase Epitaxy (OMVPE) on a GaAs substrate with a misorientation angle toward <111>A to improve the quality and surface morphology of the epilayer and performance in light emitting. The lower cladding layer of first conductivity type forms on a misoriented substrate with the same type of conductivity. Light transparent and current diffusion layers with a second conductivity is formed on top of the upper cladding layer for the spreading of current and expansion of the emission light.

Abstract: A light emitting diode is made by a compound semiconductor in which light emitting from an active region with a multiple quantum well structure. The active region is sandwiched by InGaAlP-based lower and upper cladding layers. Emission efficiency of the active region is improved by adding light and electron reflectors in the light emitting diode. These InGaAlP-based layers are grown epitaxially by Organometallic Vapor-Phase Epitaxy (OMVPE) on a GaAs substrate with a misorientation angle toward <111>A to improve the quality and surface morphology of the epilayer and performance in light emitting. The lower cladding layer of first conductivity type forms on a misoriented substrate with the same type of conductivity. Light transparent and current diffusion layers with a second conductivity is formed on top of the upper cladding layer for the spreading of current and expansion of the emission light.

Abstract: The light brightness of a semiconductor LED is increased by employing a light transmitting window comprising ZnO. In another embodiment, current crowding is reduced, efficiency increased and reliability (lifetime) increased by forming a thin semiconductor transition layer to reduce contact resistance between an overlying transparent window layer and an underlying transparent current diffusion layer formed on a double heterostructure light generation region. Optimum performance is achieved employing the transition layer with a ZnO transparent window layer.